Achieving beyond 30% efficiency for hole-transport-layer-free CsSnI3 perovskite solar cell: A comprehensive simulation study

Saad Ullah,Qurat ul Ain,Samina Qamar,Firoz Khan,Mohd Taukeer Khan
DOI: https://doi.org/10.1088/1402-4896/ad79c2
2024-09-12
Physica Scripta
Abstract:In recent years, the growing significance of lead-free CsSnI3 perovskite can be credited to its outstanding optoelectronic properties and environmentally friendly nature. Nevertheless, the photovoltaic potential of CsSnI3 is limited due to challenges in achieving defect-free device structures. These limitations stem from the improper alignment of the electron transport layer (ETL) with the perovskite layer, device architecture, and stability issues. The current study thoroughly analyzed the working mechanism of CsSnI3-based perovskite solar cells (PSCs) using the SCAPS-1D software. An in-depth investigation is performed on multiple physical parameters, such as acceptor density, defect density of the absorber, thickness, working temperature, shunt resistance (RSh) and series resistance (RS), to identify the optimal device configuration that yields the highest power conversion efficiency (PCE) for the hole-transport-layer (HTL)-free CsSnI3-based PSCs. The obtained results confirmed that the suitable band structure of CsSnI3-based PSCs enables efficient separation and transport of carriers. Furthermore, it is crucial to decrease the number of defects (Nt) at the interface to improve the efficiency of CsSnI3-based PSCs. The optimized device demonstrated exceptional performance, achieving an open-circuit voltage (VOC) of 1.12 V, a fill factor (FF) of 85.08%, a short-circuit current density (JSC) of 33.29 mA/cm2 and an efficiency of 31.87%.
physics, multidisciplinary
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