Abstract:Extensive research efforts have been made over the last few years to proffer solution to the high recombination rate and stability issues associated with Sn-based perovskite solar cells. In line with this, we modeled cesium tin iodide (CsSnI 3 )–based perovskite solar cell (PSC) with titanium (IV) oxide (TiO 2 ) and copper thiocyanate (CuSCN) as the electron and hole transport materials respectively by employing one-dimensional solar cell capacitance simulator (1D-SCAPS). For the CsSnI 3 -based PSC, n-i-p planar configuration was employed and previously published relevant data were used for the simulation. The results obtained for the initially modeled PSC compared well with similar devices in the literature. Based on the established relationship between charge carrier lifetime and power conversion efficiency (PCE) of a solar cell, we varied defect density in the cesium tin iodide (CsSnI 3 ) from 10 13 to 10 17 cm −3 and studied its influence on the performance parameters of the modeled CsSnI 3 -based PSC. We find that the diffusion length and lifetime of charge carriers are significantly increased with decreasing defect density of the CsSnI 3 absorber. In this study, we report that it is possible to significantly reduce the dominated Shockley–Read–Hall (SRH) high recombination rate occurring in CsSnI 3 perovskite layer even at a low defect density of 10 13 cm −3 by using a combination of SnCl 2 and Br − as additive and dopant respectively for CsSnI 3 enrichment. This strategy ensured a reduced concentration of Sn 4+ vacancy ( V Sn ) in the CsSnI 3 absorber and an improved carrier lifetime beyond 0.05 ns as obtained for the initially modeled CsSnI 3 -based PSC by a magnitude of the order of 10 3 while the diffusion length was improved from 1.1 μm by a magnitude of the order of 10 2 for the enriched CsSnI 3 -based PSC. For the optimized CsSnI 3 -based PSC, we recorded an open-circuit voltage ( V OC ) of magnitude 1.289 V, short-circuit current density ( J SC ) value 32.60 mA∙cm −2 , fill factor (FF) 83.56%, and PCE 35.12%.

Investigating the performance of perovskite solar cell with tin oxide as electron transport layer by SCAPS-1D device simulation

The Investigation SnO 2 As the Electron Transport Layer (ETL) on Perovskite Solar Cells

Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance

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Preparation of TiO2/SnO2 Electron Transport Layer for Performance Enhancement of All-Inorganic Perovskite Solar Cells Using Electron Beam Evaporation at Low Temperature

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Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks

SCAPS-1D Simulation for Device Optimization to Improve Efficiency in Lead-Free CsSnI3 Perovskite Solar Cells

Improving the perovskite solar cell by insertion of methyl ammonium tin oxide and cesium tin chloride as absorber layers: scaps 1d study based on experimental studies

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Numerical analysis of high performance perovskite solar cells with stacked ETLs/C60 using SCAPS-1D device simulator

Tin Oxide Modified Titanium Dioxide as Electron Transport Layer in Formamidinium-Rich Perovskite Solar Cells

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Lead free efficient perovskite solar cell device Optimization and defect study using Mg doped CuCrO2 as HTL and WO3 as ETL

Design and simulation investigations on electron transport layer-free in tin-based p-n homojunction perovskite solar cells

Impact of hole transport layer on the performance of all-inorganic tin (Sn) based perovskite solar cells

Enhanced Charge Transport and Interface Passivation in Efficient Perovskite Solar Cells Using Sulfur‐Doped Graphite Carbon Nitride‐Modified SnO 2 ‐Based Electron Transport Layers