Abstract:Conventional solid-state photodetectors, such as those made using silicon, are typically diode structures operated with a reverse bias placed across them. Low dark currents result; carriers photo-generated in the depletion region form a drift current which is the basis for light detection. Light with an energy greater than the band gap of the material can be seen. Silicon has a 1.1 eV band gap and devices fabricated from this material therefore react to both ultra-violet and visible wavelengths. The high resistivity of diamond suggests that diode structures may not be needed to achieve low dark currents if this material were used for the fabrication of photodetectors. Metal/diamond/metal devices can be considered which simply rely upon photoconductivity for their operation; such a device could possess high gain, since many carriers may be able to flow around the detector circuit during the lifetime of a photo-generated electron-hole pair. The wide band gap (5.5 eV, 225 run) of diamond implies that this form of photodetector will be capable of detecting deep UV light while being essentially “blind” to visible wavelengths. This property is highly desirable; filtering conventional devices to make them visible blind significantly reduces their sensitivity to UV light. The physical and chemical robustness of diamond also suggests that such devices may be suitable for operation in hostile environments. Diamond can exhibit high carrier mobilities, saturated carrier velocities and electric field breakdown strength; these properties suggest that fast detectors may be realisable. Many industrial, military and environmental applications can thus be envisaged for diamond UV sensors. The emergence of commercially accessible thin-film diamond grown by chemical vapour deposition (CVD) has enabled reliable devices to be developed. In this chapter, the intrinsic and extrinsic photoconductivity of thin-film diamond is reviewed; the design, fabrication and performance of diamond UV photodetectors is then discussed, along with some of the uses for these devices. For some applications, it may be desirable to fabricate diamond photodiodes; the realisation of this type of device from p-type material is also addressed.

Diamond Immersion Photodetector for 193 nm Lithography

Diamond immersion photodetector for 213 nm deep-ultraviolet photodetection

CVD Diamond for Ultraviolet and Particle Detectors

Performance of Metal-Semiconductor-Metal Structured Diamond Deep-Ultraviolet Photodetector with a Large Active Area

Conceptual development and characterization of a diamond-based ultraviolet detector

UV detection for excimer lamps using CVD diamond in various gaseous atmospheres

A Self-Driven, Polarized-Liquid-based Ultraviolet Photodetector

High performance diamond-based solar-blind photodetectors enabled by Schottky barrier modulation

High-Responsivity ZnS Schottky Barrier Photodiode Array for Ultraviolet Imaging

Ultraviolet responsivity enhancement for diamond photodetectors via localized surface plasmon resonance in Indium nanoislands

Progress in semiconductor diamond photodetectors and MEMS sensors

A wide ultraviolet spectra response photodetector based on epitaxial growth of highly-oriented ε-Ga2O3 crystal on diamond substrate

Thin film diamond photodiode for ultraviolet light detection

Surface plasmon decorated InGaO deep-UV photodetector array for image sensing and water quality monitoring via highly effective hot electron excitation and interfacial injection

High‐Sensitivity Photoelectrochemical Ultraviolet Photodetector with Stable pH‐Universal Adaptability Based on Whole Single‐Crystal Integrated Self‐Supporting 4H‐SiC Nanoarrays

Self‐Powered High‐Responsivity Self‐Supporting SiC/SnO2 Nanoarray Photoelectrochemical Ultraviolet Photodetector: Toward All‐Scenario Harsh Underwater Applications

MXene/AlGaN van der Waals heterojunction self-powered photodetectors for deep ultraviolet communication

Dual-Light Trapping From SiC Nano Dual-Structures Enables High-Responsivity van der Waals MSM Photodetector for UV Light Monitoring

High-responsivity self-powered deep-ultraviolet photodetector based on n-SnS 2 /p-GaN heterostructures

Deep Ultraviolet Photodetector: Materials and Devices

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa2O4 heterojunction with high sensitivity and fast speed