Surface plasmon decorated InGaO deep-UV photodetector array for image sensing and water quality monitoring via highly effective hot electron excitation and interfacial injection

Liu, Zeng
DOI: https://doi.org/10.1007/s11431-024-2660-1
2024-07-26
Science China Technological Sciences
Abstract:In addition to the plasmon-mediated resonant coupling mechanism, the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications. This study introduces a sophisticated design for a solar-blind ultraviolet (UV) detector array using linear In-doped Ga 2 O 3 (InGaO) modulated by platinum (Pt) nanoparticles (PtNPs). The construction of this array involves depositing a thin film of Ga 2 O 3 through the plasmonenhanced chemical vapor deposition (PECVD) technique. Subsequently, PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process. The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons. This process is facilitated by non-radiative decay processes induced by PtNPs. Notably, the array achieves maximum responsivity ( R ) of 353 mA/W, external quantum efficiency ( EQE ) of 173%, detectivity ( D *) of approximately 10 13 Jones, and photoconductive gain of 1.58. In addition, the standard deviation for photocurrent stays below 17% for more than 80% of the array units within the array. Subsequently, the application of this array extends to photon detection in the deep-UV (DUV) range. This includes critical areas such as imaging sensing and water quality monitoring. By leveraging surface plasmon coupling, the array achieves high-performance DUV photon detection. This approach enables a broad spectrum of practical applications, underscoring the significant potential of this technology for the advancement of DUV detectors.
materials science, multidisciplinary,engineering
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