Abstract:We have constructed a versatile low-temperature scanning near-field optical microscope (LTSNOM) with the capability of near-field imaging and spectroscopy, operating at liquid nitrogen (LN) temperature. A sample is illuminated either electronically or optically by introducing a laser beam through specially designed coaxial double lenses and an optical fiber. The detected optical signal is transmitted via a fiber tip to a photoelectric multiplier tube (PMT) or a spectrometer. Shcai-force detection by using a tuning-fork technique is applied to maintain the tip-sample distance. A shear-force topographic image, an optical image and a local spectrum can be obtained simultaneously. The whole scanning head is enclosed inside a container which is immersed in liquid nitrogen in a storage Dewar during the measurement. We have used this LT-SNOM to study the electroluminescence (EL) properties of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs), at both room temperature and liquid nitrogen temperature. Low-temperature experiments with the LT-SNOM show the stability of our construction and stable image acquisition at LN temperature. The results show that at room temperature the EL intensity distribution is quite inhomogeneous with islands like bright spots, and at LN temperature the EL intensity increased dramatically and the inhomogeneity reduced greatly. Furthermore, the near-field spectra, show a peak at a higher photon energy at around 2.95 eV at low temperature, in addition to the 2.7 eV peak observed by far field at room temperature. The results indicate that the self-organized In rich regions play a key role in the EL properties of these LEDs, which act as radiation recombination centers. In conjunction with near-field spectroscopy, the possible mechanism of this phenomenon is explained in terms of irradiative recombination in the MQWs; as well as the quantum-confined Starks effect.

Transient positron annihilation spectroscopy under light irradiation at liquid nitrogen temperature: evaluation of defect states in single-crystal ZnO

Temperature-Dependent Photoluminescence of Nanostructured ZnO

Defect Characterization in Thermoelectric Zn-Sb Systems by Positron Annihilation

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Photoluminescence Study Of The Annihilation Process Of Donor-Bound Excitons In Zno: Observation Of Quantum Mechanical Interference

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Direct Measurement and Identification of Nonradiative Processes in Zno Nanocrystallines by Combining Photoacoustic Spectroscopy with Surface Photovoltage Spectroscopy

Thermal stability of grain boundaries in nanocrystalline Zn studied by positron lifetime spectroscopy

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Emission Bands of Nitrogen-Implantation Induced Luminescent Centers in ZnO Crystals: Experiment and Theory

Molecular dynamics simulations and photoluminescence measurements of annealed ZnO surfaces

Probing defects in chemically synthesized ZnO nanostrucures by Positron Annihilation and Photoluminescence Spectroscopy

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

Formation Dynamics of Excitons and Temporal Behaviors of Fano Resonance Due to the Exciton-Impurity-phonon Configuration Interaction in ZnO.