A 326 nm pure ultraviolet light sources achieved in a Ga 2 O 3 microwire heterojunction through interface optimization and surface-modification
Mingming Jiang,Lingling Sun,Jiajia Han,Yifan Lu,Ming Meng,Jitao Li,Binghui Li
DOI: https://doi.org/10.2139/ssrn.4944353
IF: 6.2
2024-10-26
Surfaces and Interfaces
Abstract:Low-dimensional Ga 2 O 3 single-crystals have caused widespread attentions in the potential of developing ultraviolet light sources due to its ultrabroad bandgap, low-budget, high thermally stable, high breakdown voltage and others. Herein, we exhibit a significant route to construct one-dimensional Ga 2 O 3 microwire heterojunction deep-ultraviolet light-emitting diode (LED). The resulting electroluminescence is positioned at 326 nm with a narrow linewidth of about 22.5 nm, which is the shortest wavelengths once published for the Ga 2 O 3 -related light sources. In the well-fabricated LED, an intermediate AlN layer enables appropriately to manipulate band alignment of n-Ga 2 O 3 /p-GaN heterojunction, thus achieving efficient confinement of electron–holes spreading and radiative recombination within the Ga 2 O 3 microwire active medium. Benefited from surface-modified Pt nanoparticles, the LED's electroluminescence efficiency and brightness can be plasmonically boosted. More importantly, the peak energy at 3.8 eV obtained under forward bias, which is smaller than the Ga 2 O 3 bandgap, could be resulted from radiative recombination of weakly-bounded electron–holes inside the Ga 2 O 3 microwires. Therefore, the Ga 2 O 3 monocrystalline wires synthesized using high-temperature carbothermal reduction, are expected as promising-looking candidates to develop environmentally friendly, easy miniaturization, highly-stable deep-ultraviolet light sources and photonic devices.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films