Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive. Materials 2024, 17, 679

Juntao Gong,Weilei Wang,Weili Liu,Zhitang Song

DOI: https://doi.org/10.3390/ma17133295

2024-07-04

Abstract:In the original publication [...].

What problem does this paper attempt to address?

Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive

Juntao Gong,Weilei Wang,Weili Liu,Zhitang Song

DOI: https://doi.org/10.3390/ma17030679

IF: 3.4

2024-02-01

Materials

Abstract:Silicon carbide, a third-generation semiconductor material, is widely used in the creation of high-power devices. In this article, we systematically study the influence of three crucial parameters on the polishing rate of a silicon carbide surface using orthogonal experiments. By optimizing the parameters of chemical mechanical polishing (CMP) through experiments, we determined that the material removal rate (MRR) is 1.2 μm/h and the surface roughness (Ra) is 0.093 nm. Analysis of the relevant polishing mechanism revealed that manganese dioxide formed during the polishing process. Finally, due to the electrostatic effect of the two, MnO2 adsorbed on the Al2O3, which explains the polishing mechanism of Al2O3 in the slurry.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Guoshun Pan,Yan Zhou,Guihai Luo,Xiaolei Shi,Chunli Zou,Hua Gong

DOI: https://doi.org/10.1007/s10854-013-1519-1

2013-01-01

Journal of Materials Science Materials in Electronics

Abstract:Due to its high mechanical hardness and excellent chemical inertness, SiC single-crystal wafer is extremely difficult to realize effectively removed total planarization. Owing to crystalline polarity and anisotropy, material removal rate (MRR) on Si-face (0001) of SiC wafer is significantly lower than C-face (000\( \bar{1} \)) for a defect-free surface. In the paper, the slurry containing hydrogen peroxide (H2O2), potassium hydroxide and abrasive colloidal silica, is introduced to chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer, resulting in acquiring high MRR with 105 nm/h, and atomically flat defect-free surface with atomic step-terrace structure and roughness of 0.0667 nm by atomic force microscope (AFM), in order to satisfy further demands of electronic device fabrication towards substrate wafer performance. The effects of the three ingredients in the slurry towards MRR of SiC wafer, polished surface quality and coefficient of friction in polishing process are studied. Optical microscope, optical interferometry profiler and AFM are used to observe the polished surface. In addition, the CMP removal mechanism of SiC wafer and the formation of ultra-smooth surface are discussed.
XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Yan Zhou,Guoshun Pan,Xiaolei Shi,Li Xu,Chunli Zou,Hua Gong,Guihai Luo

DOI: https://doi.org/10.1016/j.apsusc.2014.08.011

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:Chemical mechanical polishing (CMP) removal mechanisms of on-axis Si-face SiC wafer have been investigated through X-ray photoelectron spectroscopy (XPS), UV-visible (UV-vis) spectroscopy and atomic force microscopy (AFM). XPS results indicate that silicon oxide is formed on Si-face surface polished by the slurry including oxidant H2O2, but not that after immersing in H2O2 solution. UV-vis spectroscopy curves prove that center dot OH hydroxyl radical could be generated only under CMP polishing by the slurry including H2O2 and abrasive, so as to promote oxidation of Si-face to realize the effective removal; meanwhile, alkali KOH during CMP could induce the production of more radicals to improve the removal. On the other side, ultra-smooth polished surface with atomic step structure morphology and extremely low Ra of about 0.06 nm (through AFM) is obtained using the developed slurry with silica nanoparticle abrasive. Through investigating the variations of the atomic step morphology on the surface polished by different slurries, it's reveals that CMP removal mechanism involves a simultaneous process of surface chemical reaction and nanoparticle atomic scale abrasion. (C) 2014 Elsevier B.V. All rights reserved.
Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Weilei Wang,Weili Liu,Zhitang Song

DOI: https://doi.org/10.1149/2162-8777/ac12de

IF: 2.2

2021-07-01

ECS Journal of Solid State Science and Technology

Abstract:Chemical mechanical polishing (CMP), as a widely used global smoothing technique, requires a high polishing rate and a low surface roughness. However, it is difficult to meet these requirements with single-step polishing. To obtain a perfect 4H-SiC wafer surface, we studied a two-step CMP 4H-SiC wafer using a-Al2O3-based slurry and nano-SiO2-based slurry. Before the two-step process was determined, the effect of concentration of KMnO4 and pH on the polishing rate of 4H-SiC was first studied with Al2O3 as the abrasive, and the maximum polishing rate of 1400 nm h−1 was determined under the condition of pH of 2.00 and KMnO4 concentration of 6.5 wt% in the step. Furthermore, the effect of H2O2 concentration on the polishing rate of 4H-SiC was investigated using SiO2 as the abrasive and V2O5 as the catalyst. It was determined that under the condition of V2O5 concentration of 4 wt% and H2O2 concentration of 10 wt%, the maximum polishing rate of the second step polishing was 150 nm h−1, and a perfect surface was obtained, with a surface roughness of 0.066 nm. In addition, the in situ friction coefficients have used to characterize the two-step process. At the end, the CMP mechanisms of the above two slurry have been deduced and preliminarily demonstrated.

materials science, multidisciplinary,physics, applied
Correction to: New surface microstructure of mono-si wafer textured using wet chemical solutions for solar cell

Xiao Tong Gong,Shi Meng Feng,Gang Lei,Meng Qi Shi

DOI: https://doi.org/10.1007/s00339-019-2748-9

2019-01-01

Applied Physics A

Abstract:Unfortunately the addition (revised paper (2)) was published in the title of this article.
Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Wantang Wang,Baoguo Zhang,Yunhui Shi,Tengda Ma,Jiakai Zhou,Ru Wang,Hanxiao Wang,Nengyuan Zeng

DOI: https://doi.org/10.1016/j.jmatprotec.2021.117150

IF: 6.3

2021-09-01

Journal of Materials Processing Technology

Abstract:Chemical mechanical polishing (CMP) has revolutionized the processing of semiconductor material such as silicon carbide (SiC). However, the strong chemical bond between silicon atoms and carbon atoms gives SiC materials a very high mechanical hardness and chemical stability. Therefore, SiC wafers may suffer from a low material removal rate (MRR) and serious subsurface damage when traditional CMP methods are used. In this study, to improve the CMP properties of Si-face of the 4H-SiC wafers, the synergistic effect of UV and TiO2 on the activation of persulfate (PS) was investigated for the first time. The response surface method was employed to study the effect of pH, PS concentration, and TiO2 dosage on CMP in-depth, and to ultimately optimize the polishing process. The analysis demonstrated that an MRR of 608 nm/h can be obtained with the average surface roughness (Sq) of 0.521 nm when the pH is 6, in which the TiO2 dosage is 0.015 wt% and the PS concentration is 3 wt%. Polarization curves, AC impedance spectra and X-ray photoelectron spectroscopy tests were performed to further analyze the chemical action of the slurry, which showed that the introduction of UV-TiO2 strongly enhances the chemical action of slurry and results in the formation of a passivated layer on the SiC surface. Finally, based on the radical quenching experiments and the results mentioned above, a model that relates to the removal of 4H-SiC by UV-TiO2 synergistic activation of PS is proposed.

materials science, multidisciplinary,engineering, manufacturing, industrial
Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Yan He,Zewei Yuan,Meiling Tang,Jingting Sun,Changfu Liu,Xingjun Gao

DOI: https://doi.org/10.1177/09544062221117953

2022-08-12

Abstract:Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science, Ahead of Print. Single-crystal SiC has become the third-generation semiconductor material with the most development potential due to its many outstanding physical and chemical properties, but excellent surface quality is the prerequisite for its application. Therefore, atomic mechanism of chemical and mechanical mutual promotion in hydroxyl radical ·OH aqueous was researched through reactive molecular dynamics simulation for obtaining nano-smoothed surface with photocatalysis-assisted chemical mechanical polishing (PCMP). The behavior of nanoparticles promoting chemical reaction during the nanofinishing process was studied vias a single abrasive sliding on the surface of SiC. A combination method of mechanical action and chemical action was adopted to compare effect of material oxidation and material removal. Si/C atoms are mainly fractured or escaped in the forms of SiO, CO, chain, SiO2, and CO2, and more residual oxidation products were observed on the substrate. Furthermore, XPS and nanoindentation results also support the mechanism of chemical and mechanical mutual promotion in PCMP through the detection of the oxidized products and surface hardness. This process activated and removed the SiC materials and generated a smooth and non-damaged surface (Ra 0.269 nm and Rmax 0.807 nm). The research results may reveal the removal mechanism of Si/C atoms, and provide new theoretical and technical support for the ultra-precision machining of single crystal sapphire, silicon nitride and diamond etc.
Investigation on the Surface Characterization of Ga-faced GaN after Chemical-Mechanical Polishing

Hua Gong,Guoshun Pan,Yan Zhou,Xiaolei Shi,Chunli Zou,Suman Zhang

DOI: https://doi.org/10.1016/j.apsusc.2015.02.107

IF: 6.7

2015-01-01

Applied Surface Science

Abstract:The relationship between the surface characterization after chemical mechanical polishing (CMP) and the size of the silica (SiO2) abrasive used for CMP of gallium nitride (GaN) substrates was investigated in detail. Atomic force microscope was used for measuring the surface morphology, pit feature, pit depth distribution, and atomic step-terrace structure. With the decrease of SiO2 abrasive size, the pit depth reduced and the atomic step-terrace structure became more whole with smaller damage area, resulting in smaller roughness. For tiny-sized SiO2 abrasive, an almost complete atomic step-terrace structure with 0.0523 nm roughness was achieved. On the other hand, in order to acquire higher removal, Pt/C nanoparticle was employed as a catalyst in CMP slurry. The result indicates that when Pt/C catalyst content was reached to 1.0 ppm, material removal rate was increased by 47.69% compared to that by none of the catalyst, and besides, the pit depth reduced and the surface atomic step-terrace structure was not destroyed. The Pt/C nanoparticle is proved to be the promising catalyst to the surface preparation of super-hard and inert materials with high efficiency and good surface. (C) 2015 Elsevier B.V. All rights reserved.
Electrochemical mechanical polishing of 4H-SiC (0001) with different grinding stones

Kenta Arima,K. Kawai,K. Yamamura,Xu Yang

Abstract:Single-crystal SiC (4H-SiC) is a promising next-generation semiconductor power-device material because of its excellent electronic and thermal properties, such as a wide band gap, high breakdown field and high thermal conductivity. As a means of realizing the high-quality, highly efficient and low-cost polishing of SiC, electrochemical mechanical polishing (ECMP) was proposed. In ECMP, the hard SiC surface is modified to a soft oxide layer by anodic oxidation then the soft oxide layer is removed by abrasives softer than SiC. In this study, three types of grinding stones, alumina, silica and ceria, were used to polish the Si face of a 4H-SiC substrate in the ECMP process, and the polishing properties of the different grinding stones were evaluated in terms of the surface roughness and material removal rate (MRR) of the processed SiC surface.

Engineering,Materials Science
Preparation of Γ‐alumina/silica Core–shell Abrasives and Their Chemical Mechanical Polishing Performances on Sapphire Substrates

Xin Wang,Hong Lei

DOI: https://doi.org/10.1049/mnl.2018.0166

2018-01-01

Micro & Nano Letters

Abstract:The chemical mechanical polishing (CMP) process has become a widely accepted global planarisation technology. The abrasive is one of the important influencing factors during the CMP process. In this work, -alumina/silica abrasives with a core-shell structure were synthesised. Time-of-flight secondary ion mass spectroscopy was used to characterise the composition of the obtained abrasives. The morphology and structure of the abrasives were measured by using scanning electron microscopy and transmission electron microscopy. The CMP performances of the -alumina/silica abrasives on sapphire substrates were investigated. Experimental results indicate that the -alumina/silica abrasives exhibit lower surface roughness and higher material removal rate than that of pure silica and -alumina abrasives under the same testing conditions. Furthermore, through the X-ray photoelectron spectroscopy test, this work investigated the chemical effect mechanism of the -alumina/silica core-shell abrasives in sapphire CMP. The results show that solid-state chemical reactions occur between the silica shell and sapphire surface during the CMP process. The study also established a wear model to investigate the mechanical friction mechanism.
The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing

J. Xu,J.B. Luo,L.L. Wang,X.C. Lu

DOI: https://doi.org/10.1016/j.triboint.2005.09.034

IF: 5.62

2007-01-01

Tribology International

Abstract:The effect of the contact nominal pressure on the surface roughness and sub-surface deformation in chemical mechanical polishing (CMP) process has been investigated. The experimental results show that a better surface quality can be obtained at the lower pressure, and the thickness of sub-surface deformation layer increases with the increase of the pressure. In CMP process, polishing not only introduces amorphous transformation but also brings a silicon oxide layer with a thickness of 2–3nm on the top surface. The atomic structure of the material inside the damage layer changes with the normal pressure. Under a higher pressure (125kPa), there are a few crystal grain packets surrounded by the amorphous region in which the lattice is distorted, and a narrow heavy amorphous deformation band appears on the deformation region side of the interface. Under a lower pressure, however, an amorphous layer can only be observed.
Correction to: Milling-Related Brittle Fracture Mechanisms of a SiCp/Al Composite

H. J. Zhang,J. G. Li,J. G. Du

DOI: https://doi.org/10.1007/s11223-020-00183-w

IF: 0.667

2020-01-01

Strength of Materials

Abstract:The following correction should be made to the article entitled “Milling-Related Brittle Fracture Mechanisms of a SiCp/Al Composite” by H. J. Zhang, J. G. Li, and J. G. Du, Vol. 52, No. 1, 81–89, 2020, https://doi.org/10.1007/s11223-020-00152-3.
Removal mechanism on 4H–SiC single crystal by picosecond laser ablation-assisted chemical mechanical polishing (CMP)

Haixu Liu,Zhipeng Li,Jiejing Li,Huayang Wu,Dunwen Zuo

DOI: https://doi.org/10.1016/j.ceramint.2024.01.239

IF: 5.532

2024-03-10

Ceramics International

Abstract:The properties of the single-crystal 4H–SiC are complex and difficult to understand. Consequently, determining the effect of the surface and subsurface structures and composition changes of picosecond laser ablation (PLA) on the material removal mechanism during the CMP stage is challenging. In this study, we used PLA of 4H–SiC surfaces to investigate the mechanism underlying the effect of PLA-assisted CMP, which is considerably larger than the laser ablation threshold, on the removal of 4H–SiC to improve the material removal rate and surface quality of CMP. The TEM and contact angle detection results indicated that the reduction in the fracture strength and increase in the surface energy of high-power PLA contributed to the removal form and chemical action of CMP. Subsequent experimental results showed that the contact angle and hardness of the PLA-treated surfaces in the hydrophilic range were reduced by 45% and 48.6%, respectively. The material removal rate (MRR) of PLA-CMP (alumina slurry) at 45 min was 3.67 μm/h that was a 70% improved CMP removal relative to no picosecond laser ablation (NPLA). The mechanism of PLA-assisted CMP removal was revealed to be related to the plastic cutting of the abrasive and high pressure and temperature, leading to the softening-removal-softening cycle of the material. This study provides a new perspective on the ultraprecise and high-efficiency fabrication of high-quality single-crystal 4H–SiC.

materials science, ceramics
A Study of Chemical Products Formed on Sapphire (0001) During Chemical–mechanical Polishing

Xiaolei Shi,Guoshun Pan,Yan Zhou,Li Xu,Chunli Zou,Hua Gong

DOI: https://doi.org/10.1016/j.surfcoat.2015.02.053

2015-01-01

Abstract:A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing is presented. The results demonstrated that the formation and removal of chemical products both proceeded from the hexagonal close-packed sapphire Al-O layers described as atomic terraces, and the material removal rule of sapphire (0001) during chemical–mechanical polishing is the regular removal of chemical products formed from the atomic terraces, which were successfully characterized by AFM with super-sharp scanning probes. Besides, we also found that the surface with screw dislocations could not be polished completely by CMP due to the crystal distortion energy, and a hard polishing pad could remove scratches more effectively than a soft one
Polishing Properties of Porous Silica Abrasive on Hard Disk Substrate CMP

Ping Liu,Hong Lei,RuLing Chen

DOI: https://doi.org/10.1504/ijat.2010.034053

2010-01-01

International Journal of Abrasive Technology

Abstract:Chemical mechanical polishing (CMP) is the only technology to provide global planarisation of topography with a low post-planarisation slope. Abrasive is one of the key influencing factors on the surface quality during the CMP. Traditional silica abrasive is easy to cause polishing scratches since it is compact solid particle. In this work the polishing properties of porous silica abrasive in hard disk substrate CMP were investigated. The results show that the polishing down force and rotating speed have a strong influence on the material removal rate and average surface roughness of the hard disk substrate. After polishing with the slurry containing the porous silica abrasive, a smooth hard disk substrate surface was obtained.
Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Gaopan Chen,Jianguo Li,Jiangyou Long,Haimei Luo,Yan Zhou,Xiaozhu Xie,Guoshun Pan

DOI: https://doi.org/10.1016/j.apsusc.2020.147963

IF: 6.7

2021-01-01

Applied Surface Science

Abstract:Ultra-precision machining of silicon carbide (SiC) Si-face has been one of the difficulties in manufacture. Various new processing methods were proposed, targeting to address the issue. However, mechanism of surface structure and composition changes effects on machining performance were still unclear. In this study, the structure with different cluster size and oxide content is prepared on SiC Si-face by nanosecond laser modulation. Benefiting from the increased content of oxygen and the consistency of oxide composition on the surface/subsurface, the stability of the removal rate (MRR) in the continuous chemical mechanical polishing (CMP) is improved, resulting in advanced removal efficiency. Additionally, the oxide coating on the SiC surface reduces the probability of contact between abrasives and SiC Si-surface, leading to minor scratches after polishing. The roughness (Ra) is as low as 0.081 nm polished with alumina (Al2O3) slurry. Remarkably, it is found that the change of oxide content is closely related to MRR of CMP, which provides a new perspective for the design of high-performance SiC Si-face ultraprecision manufacturing.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0 0 0 1)

xiaolei shi,guoshun pan,yan zhou,zhonghua gu,hua gong,chunli zou

DOI: https://doi.org/10.1016/j.apsusc.2014.04.048

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:•We develop and characterize extreme small nanoparticles successfully.•We demonstrate CMP of 4H-SiC with SiO2 abrasives based slurry and successfully obtain a high-definition atomic step-terrace structure.•SiO2 abrasives with a large particle size could obtain high planarization efficiency but low planarization quality and vice versa.•A hypothesis to explain the material removal mechanism during CMP was proposed.•The change rule of atomic step-terrace structure during CMP is studied.
AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

Yan Zhou,Guoshun Pan,Xiaolei Shi,Hua Gong,Li Xu,Chunli Zou

DOI: https://doi.org/10.1007/s10854-015-3668-x

2015-01-01

Journal of Materials Science Materials in Electronics

Abstract:The material removal mechanism of sapphire wafer during chemical mechanical polishing has been studied through X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements. XPS results indicate that alumina silicate (Al2Si2O7·2H2O) is generated on the polished sapphire surface by SiO2 slurry, otherwise alumina hydrate (AlO(OH)) on the polished surface by H2O solution. Meanwhile, ultra-smooth polished surface with extremely low Ra of below 0.1 nm and atomic step structure morphology via AFM is realized using SiO2 slurry. Through investigating the variations of the surface characteristics polished by different ingredients via the morphology and force curve measurements, it’s reveals that the product-aluminum silicate with stronger adhesion and lower hardness is more readily to generate and be removed than the product-alumina hydrate induced by H2O. Thus, except for atomic scale mechanical abrading, the abrasive SiO2 nanoparticle is used for anticipating in the chemical reaction, resulting in superior surface finish of sapphire wafer with high efficiency.
Preparation of Silane Modified Sio2 Abrasive Particles and Their Chemical Mechanical Polishing (cmp) Performances

GuoShun Pan,ZhongHua Gua,Yan Zhou,Tuo Li,Hua Gong,Yan Liu

DOI: https://doi.org/10.1016/j.wear.2011.05.044

IF: 4.695

2011-01-01

Wear

Abstract:Surface modified SiO2 particles in an aqueous environment with gamma-aminopropyl triethoxysilane (AFTS)/methyl trimethoxysilane (MTMOS) are introduced as abrasive in the slurry. The modified silica particles are characterized by Particle Size/Zeta Potential Analysis, Fourier Transform Infrared Spectroscopy (FTIR), Thermal Gravimetric Analysis (TGA) and Differential Scanning Calorimetry (DSC). In addition, the enhancement of polishing rate owning to the modified silicon particles in silicon wafer Chemical Mechanical Polishing (CMP) is observed. (C) 2011 Elsevier B.V. All rights reserved.
A Review on Precision Polishing Technology of Single-Crystal SiC

Gaoling Ma,Shujuan Li,Feilong Liu,Chen Zhang,Zhen Jia,Xincheng Yin

DOI: https://doi.org/10.3390/cryst12010101

IF: 2.7

2022-01-13

Crystals

Abstract:Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

materials science, multidisciplinary,crystallography

Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive. Materials 2024, 17, 679

Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Correction to: New surface microstructure of mono-si wafer textured using wet chemical solutions for solar cell

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Investigation on the Surface Characterization of Ga-faced GaN after Chemical-Mechanical Polishing

Electrochemical mechanical polishing of 4H-SiC (0001) with different grinding stones

Preparation of Γ‐alumina/silica Core–shell Abrasives and Their Chemical Mechanical Polishing Performances on Sapphire Substrates

The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing

Correction to: Milling-Related Brittle Fracture Mechanisms of a SiCp/Al Composite

Removal mechanism on 4H–SiC single crystal by picosecond laser ablation-assisted chemical mechanical polishing (CMP)

A Study of Chemical Products Formed on Sapphire (0001) During Chemical–mechanical Polishing

Polishing Properties of Porous Silica Abrasive on Hard Disk Substrate CMP

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0 0 0 1)

AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

Preparation of Silane Modified Sio2 Abrasive Particles and Their Chemical Mechanical Polishing (cmp) Performances

A Review on Precision Polishing Technology of Single-Crystal SiC