Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

Single-Gate MoS 2 Tunnel FET with a Thickness-Modulated Homojunction

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

Quantum-mechanical effect in atomically thin MoS2 FET

All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Reconfigurable Tunneling Transistors Heterostructured by an Individual Carbon Nanotube and MoS2

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface