Abstract:The aluminum‐doped zinc oxide (AZO)‐based passivating contacts with high electron selectivity are reported. By the implementation of AZO‐based electron‐selective contact, a champion power conversion efficiency (PCE) of 24.3% is achieved on c‐Si solar cells. This represents the PCE record for metal oxide‐based passivating contacts for c‐Si solar cells. Crystalline silicon (c‐Si) solar cells require passivating contacts to unlock their full efficiency potential. For this doped silicon layers are the materials of choice, as they yield device voltages close to the thermodynamic limit. Yet, replacing such layers with wide‐bandgap metal oxides may be advantageous from a cost perspective and minimize parasitic optical absorption. Here the aluminum‐doped zinc oxide (AZO)‐based passivating contacts with high electron selectivity are presented. The SiO2/AZO/Al2O3 stack is demonstrated to provide excellent surface passivation on c‐Si (implied Voc up to 742 mV) after thermal annealing, and an average contact resistivity of 51 mΩ cm2 is simultaneously obtained after etching off Al2O3 capping layer. By the implementation of AZO‐based electron‐selective contact, a champion power conversion efficiency (PCE) of 24.3% is achieved on c‐Si solar cells, representing the PCE record for metal oxide‐based passivating contacts. Finally, the efficiency potential, cost, and industrial compatibility of the AZO‐based electron‐selective contacts are discussed, paving the way for industrial applications.

Aluminum and Molybdenum Co-Doped Zinc Oxide Films as Dual-Functional Carrier-Selective Contact for Silicon Solar Cells

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells

Enhancing performance of heterojunction silicon solar cells through atomic-layer-deposited MoO x hole contact and atomic-layer-deposited AlZnO layer

Development of aluminum-doped ZnO films for a-Si:H/μc-Si:H solar cell applications

ZnO-Doped In<sub>2</sub>O<sub>3</sub> Front Transparent Contact Enables >24.0% Silicon Heterojunction Solar Cells

Direct Current Sputtered Aluminum-Doped Zinc Oxide Films for Thin Crystalline Silicon Heterojunction Solar Cell

Modulation of the TCO/MoO x Front Contact Enables >21% High-Efficiency Dopant-Free Silicon Solar Cells

ZnO‐doped In2O3 front transparent contact enables >24.0% silicon heterojunction solar cells

Preparation of Aluminum Doped Zinc Oxide Films with Low Resistivity and Outstanding Transparency by a Sol–gel Method for Potential Applications in Perovskite Solar Cell

Simulation, Fabrication, and Application of Transparent Conductive Mo-Doped Zno Film in A Solar Cell

Heterojunction solar cells with asymmetrically carrier-selective contact structure of molybdenum-oxide/silicon/magnesium-oxide

High-performance SiOx/MgOx Electron-Selective Contacts for Crystalline Silicon Solar Cells

Atomic-Layer-Deposited H:MoO x Function Layer as Efficient Hole Selective Passivating Contact in Silicon Solar Cells

Efficient Silicon Solar Cells with Aluminum‐Doped Zinc Oxide‐Based Passivating Contact

Bilayer MoOX/CrOX Passivating Contact Targeting High Stable Silicon Heterojunction Solar Cell.

Silicon solar cells with bifacial metal oxides carrier selective layers

High‐Performance Organic‐Silicon Heterojunction Solar Cells by Using Al‐Doped ZnO As Cathode Interlayer

Atomic-layer-deposited H:MoOx Function Layer As Efficient Hole Selective Passivating Contact in Silicon Solar Cells

Bilayer MoOX/CrOX Passivating Contact Targeting Highly Stable Silicon Heterojunction Solar Cells

Modified Textured Surface Mocvd-Zno:B Transparent Conductive Layers for Thin-Film Solar Cells