Abstract:In this work, robust joints of sapphire and aluminum were successfully achieved by direct ultrafast laser transmission microwelding. Effects of laser parameters on the microstructures and mechanical properties were comprehensively studied. The welding process highly depended on the laser ablated metal nanoparticles within the heterojunction, as well as the thermal accumulation under multiple laser pulses irradiation. It showed that lack of fusion at the sapphire/aluminum interface can occur due to the incomplete melting of ablated nanoparticles at low laser fluence (<0.48 J/cm(2)). While serious cavities and cracks inside the brittle sapphire were formed with the intensified stress concentration after melting-solidification process at excessive laser fluence (>0.64 J/cm(2)). A nearly defect-free joint was obtained with max. shear strength of 128.1 +/- 8.2 MPa at room temperature, when the laser fluence was 0.56 J/cm(2). The high shear strength can be attributed to the tortuous interface with wide elemental transition layer. Meanwhile, the welded sapphire/aluminum joints exhibited high reliability under extreme service temperatures, which the shear strength can reach 159.8 +/- 8.96 MPa at -50 degrees C and 80.6 +/- 11.1 MPa at 200 degrees C. The sealing tests also showed the excellent impermeability of laser welded sapphire/aluminum structure, confirming the micro-crack free joint formation. This work demonstrates the feasibility of using ultrafast laser to achieve high-quality sapphire/aluminum joint, which is promising in heatdissipation substrate manufacturing in power semiconductor devices.

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