Abstract:SiC mosfets with antiparallel SiC schottky barrier diodes (SBDs) without reverse recovery can significantly reduce turn-on switching loss. However, this will exacerbate the oscillation during the switching process, making the electromagnetic interference problem more serious. This article analyzes the influence of the power module parasitic parameters on the propagation path and proposes the optimization principle for the first time. First, the high-frequency switching oscillation noise source (HO-S) and the propagation path considering power module parasitic parameters based on a double-pulse test circuit are analyzed. Second, a high-frequency switching oscillation conduction common-mode (HO-CM) current mathematical model is established during the switching oscillation process to clarify the relationship among noise source, propagation path, and HO-CM current. Then, in order to reduce HO-CM current, the optimization principle of HO-CM current excited by HO-S is proposed. The HO-CM current can be canceled by optimizing the power module layout or Busbar parasitic inductance. Finally, the effect of power module parasitic parameters on HO-CM current is verified, and the HO-CM currents of power modules with different packaging layouts are compared. This method can reduce the HO-CM current spectrum of the critical conduction mode or discontinuous conduction mode buck converter by more than 10 dB. The analysis of the effect of power module parasitic parameters on HO-CM current can guide power module layout design or power module selection based on different working conditions of half-bridge converters.

Heterogeneous Integration of Silicon-Based RC Snubber in SiC Power Module for Parasitic Oscillation Noise Reduction

Suppression switching oscillation in three-phase inverter with 1.7kV/300A SiC modules

Design of RCD Snubber Considering Asymmetric Absorption Position of Multiple Switches in Parallel for LLC Application

Design Optimization of RC Snubber Circuit for A SiC Power Module

C-RC Snubber Optimization Design for Improving Switching Characteristics of SiC MOSFET

Suppression Switching Ringing of SiC-MOSFET Inverters with Combined Design of DC Bus Snubber and Gate Drive

Impact of $RC$ Snubber on Switching Oscillation Damping of SiC MOSFET With Analytical Model

Turn-on Oscillation Damping for Hybrid IGBT Modules

A Modified RC Snubber With Coupled Inductor for Active Voltage Balancing of Series-Connected SiC MOSFETs

Modeling of SiC MOSFETs Switching Oscillation for Dynamic Optimization with RC Snubber in the Half-bridge Circuit

Overvoltage and Oscillation Suppression Circuit With Switching Losses Optimization and Clamping Energy Feedback for SiC MOSFET

Switching Noise Suppression for Hybrid Igbt Modules

Suppressing Method of Common-Mode Noise in MHz 380V-12V DCX Converter

Investigation of the Effects of Snubber Capacitors on Turn-on Overvoltage of SiC MOSFETs

Analysis and Suppression of Common-Mode EMI Noise in 1 MHz 380 V-12 V DCX Converter with Low NFoM Devices

Investigation of Conducted Electromagnetic Interference of Three-Level SiC Power Module

An Advanced Design of Power Module with EMI Reduction Method

Design and Evaluation of a Face-Down Embedded SiC Power Module With Low Parasitic Inductance and Low Thermal Resistance

Suppressing Methods of Parasitic Capacitance Caused Interference in a SiC MOSFET Integrated Power Module

Analysis and Optimization of High-Frequency Switching Oscillation Conducted CM Current Considering Parasitic Parameters Based on a Half-Bridge Power Module