Project Oberon - the design of an operating system and compiler

N. Wirth,J. Gutknecht

1992-11-02

Abstract:Presents the results of Project Oberon: an entire software environment for a modern workstation created by the authors during 1986-89. The primary goal of the project was to design and implement a system from scratch and to structure it in such a way that it could be described, explained, and unders

What problem does this paper attempt to address?

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.

Donglai Zhong,Huiwen Shi,Li Ding,Chenyi Zhao,Jingxia Liu,Jianshuo Zhou,Zhiyong Zhang,Lian-Mao Peng

DOI: https://doi.org/10.1021/acsami.9b15334

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Carbon nanotubes (CNTs) have been considered a preferred channel material for constructing high-performance radio frequency (RF) transistors with outstanding current gain cutoff frequency (fT) and power gain cutoff frequency (fmax) but the highest reported fmax is only 70 GHz. Here, we explore how good RF transistors based on solution-derived randomly oriented semiconducting CNT films, which are the most mature CNT materials for scalable fabrication of transistors and integrated circuits, can be achieved. Owing to the significantly reduced number of CNT/CNT junctions obtained by scaling the channel length down to below 100 nm, we realized RF field-effect transistors (FETs) with maximum transconductance Gm up to 0.38 mS/μm, which is the record among CNT-based RF FETs. After de-embedding the pad-induced capacitances and resistances, the CNT FETs with different gate lengths (Lg) exhibit fT as high as 103 GHz (intrinsically 281 GHz) or fmax up to 107 GHz (intrinsically 190 GHz), which are the records among CNT-based RF FETs. In particular, the CNT FETs with an Lg of 50 nm present pad de-embedding fT of 86 GHz and fmax of 85 GHz, and represent the best CNT RF transistor in terms of comprehensive performance to date. To demonstrate the actual high-speed and scalable fabrication of our CNT RF FETs, we fabricated CNT FET-based five-stage ring oscillators with oscillation frequencies above 5 GHz.
Radiofrequency Transistors Based on Aligned Carbon Nanotube Arrays

Huiwen Shi,Li Ding,Donglai Zhong,Jie Han,Lijun Liu,Lin Xu,Pengkun Sun,Hui Wang,Jianshuo Zhou,Li Fang,Zhiyong Zhang,Lian-Mao Peng

DOI: https://doi.org/10.1038/s41928-021-00594-w

IF: 33.255

2021-01-01

Nature Electronics

Abstract:The development of next-generation wireless communication technology requires integrated radiofrequency devices capable of operating at frequencies greater than 90 GHz. Carbon nanotube field-effect transistors are promising for such applications, but key performance metrics, including operating frequency, at present fall below theoretical predictions. Here we report radiofrequency transistors based on high-purity carbon nanotube arrays that are fabricated using a double-dispersion sorting and binary liquid interface aligning process. The nanotube arrays exhibit a density of approximately 120 nanotubes per micrometre, a maximum carrier mobility of 1,580 cm 2 V −1 s −1 and a saturation velocity of up to 3.0 × 10 7 cm s −1 . The resulting field-effect transistors offer high d.c. performance (on-state current of 1.92 mA µm −1 and peak transconductance of 1.40 mS μm −1 at a bias of −0.9 V) for operation at millimetre-wave and terahertz frequencies. Transistors with a 50 nm gate length show current-gain and power-gain cutoff frequencies of up to 540 and 306 GHz, respectively, and radiofrequency amplifiers can exhibit a high power gain (23.2 dB) and inherent linearity (31.2 dBm output power of the third-order intercept point) in the K-band (18 GHz).
High-Speed Carbon Nanotube Photodetectors for 2 μm Communications

Wu Weifeng,Ma Hui,Cai Xiang,Han Bing,Li Yan,Xu Ke,Lin Hongtao,Zhang Fan,Chen Zhangyuan,Zhang Zhiyong,Peng Lian-Mao,Wang Sheng

DOI: https://doi.org/10.1021/acsnano.3c04619

IF: 17.1

2023-01-01

ACS Nano

Abstract:In the era of big data, the growing demand for data transmission capacity requires the communication band to expand from the traditional optical communication windows (similar to 1.3-1.6 mu m) to the 2 mu m band (1.8-2.1 mu m). However, the largest bandwidth (similar to 30 GHz) of the current high-speed photodetectors for the 2 mu m window is considerably less than the developed 1.55 mu m band photodetectors based on III-V materials or germanium (>100 GHz). Here, we demonstrate a high-performance carbon nanotube (CNT) photodetector that can operate in both the 2 and 1.55 mu m wavelength bands based on high-density CNT arrays on a quartz substrate. The CNT photodetector exhibits a high responsivity of 0.62 A/W and a large 3 dB bandwidth of 40 GHz (setup-limited) at 2 mu m. The bandwidth is larger than that of existing photodetectors working in this wavelength range. Moreover, the CNT photodetector operating at 1.55 mu m exhibits a setup-limited 3 dB bandwidth over 67 GHz at zero bias. Our work indicates that CNT photodetectors with high performance and low cost have great potential for future highspeed optical communication at both the 2 and 1.55 mu m bands.
High-Speed Carbon Nanotube Photodetectors for 2 Μm Communications.

Weifeng Wu,Hui Ma,Xiang Cai,Bing Han,Yan Li,Ke Xu,Hongtao Lin,Fan Zhang,Zhangyuan Chen,Zhiyong Zhang,Lian-Mao Peng,Sheng Wang

DOI: https://doi.org/10.1021/acsnano.3c04619

IF: 17.1

2023-01-01

ACS Nano

Abstract:In the era of big data, the growing demand for data transmission capacity requires the communication band to expand from the traditional optical communication windows (∼1.3-1.6 μm) to the 2 μm band (1.8-2.1 μm). However, the largest bandwidth (∼30 GHz) of the current high-speed photodetectors for the 2 μm window is considerably less than the developed 1.55 μm band photodetectors based on III-V materials or germanium (>100 GHz). Here, we demonstrate a high-performance carbon nanotube (CNT) photodetector that can operate in both the 2 and 1.55 μm wavelength bands based on high-density CNT arrays on a quartz substrate. The CNT photodetector exhibits a high responsivity of 0.62 A/W and a large 3 dB bandwidth of 40 GHz (setup-limited) at 2 μm. The bandwidth is larger than that of existing photodetectors working in this wavelength range. Moreover, the CNT photodetector operating at 1.55 μm exhibits a setup-limited 3 dB bandwidth over 67 GHz at zero bias. Our work indicates that CNT photodetectors with high performance and low cost have great potential for future high-speed optical communication at both the 2 and 1.55 μm bands.
Carbon Nanotube Devices for Quantum Technology

Andrey Baydin,Fuyang Tay,Jichao Fan,Manukumara Manjappa,Weilu Gao,Junichiro Kono

DOI: https://doi.org/10.3390/ma15041535

IF: 3.4

2022-02-18

Materials

Abstract:Carbon nanotubes, quintessentially one-dimensional quantum objects, possess a variety of electrical, optical, and mechanical properties that are suited for developing devices that operate on quantum mechanical principles. The states of one-dimensional electrons, excitons, and phonons in carbon nanotubes with exceptionally large quantization energies are promising for high-operating-temperature quantum devices. Here, we discuss recent progress in the development of carbon-nanotube-based devices for quantum technology, i.e., quantum mechanical strategies for revolutionizing computation, sensing, and communication. We cover fundamental properties of carbon nanotubes, their growth and purification methods, and methodologies for assembling them into architectures of ordered nanotubes that manifest macroscopic quantum properties. Most importantly, recent developments and proposals for quantum information processing devices based on individual and assembled nanotubes are reviewed.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Carbon Nanotube Based Radio Frequency Transistors For K-Band Amplifiers

Jianshuo Zhou,Lijun Liu,Huiwen Shi,Maguang Zhu,Xiaohan Cheng,Li Ren,Li Ding,Lian-Mao Peng,Zhiyong Zhang

DOI: https://doi.org/10.1021/acsami.1c07782

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Owing to the combination of high carrier mobility and saturation velocity, low intrinsic capacitance, and excellent stability, the carbon nanotube (CNT) has been considered as a perfect semiconductor to construct radio frequency (RF) fieldeffect transistors (FETs) and circuits with an ultrahigh frequency band. However, the reported CNT RF FETs usually exhibited poor real performance indicated by the as-measured maximum oscillation frequency (f(max)), and then the amplifiers, which are the most important and fundamental RF circuits, suffered from a low power gain and a low frequency band. In this work, we build RF transistors on solution-derived randomly orientated CNT films with improved quality and uniformity. The randomly orientated CNT film FETs exhibit the record as-measured maximum f(max) of 90 GHz, demonstrating the potential for over 28 GHz (at least one-third of 90 GHz) 5G mmWave (frequency range 2) applications. Benefiting from the large-scale uniformity of CNT films, FETs are designed and fabricated with a large channel width to present low internal resistance for the standard 50 Omega impedance matching guide line, which is critical to construct an RF amplifier. Furthermore, we first demonstrate amplifiers with a maximum power gain up to 11 dB and output third-order intercept point (OIP3) of 15 dBm, both at the K-band, which represents the record of a CNT amplifier and is even comparable with a commercial amplifier based on III-V RF transistors.
Open Access Atlas of Otolaryngology, Head & Neck Operative Surgery Free Tissue Transfer Flaps in Head & Neck Reconstruction: Microvascular Anastomosis Technique

Ottie Van Zyl,J. Fagan

Abstract:This chapter describes the surgical technique of microvascular anastomosis, and the management of patients undergoing vascu-larrised free tissue transfer reconstruction of the head and neck. Readers are referred to the open access atlas chapters on vascularised free fibula (FFF), radial free forearm (RFFF), an-terolateral thigh (ALTF), rectus abdomi-nis and jejenum flaps for technical details about how to raise these flaps, and to chapters about their applications to reconstruct oropharyngeal, cervical oesopha-geal, floor of mouth, partial glossectomy, total glossectomy, total maxillectomy, inferior maxillectomy, and total laryngec-tomy defects. Preoperative evaluation is important in order to select the most suitable flap, and to select patients and to optimise their medical status. Factors to consider include:  Flap o Vascular status o Tissue quantity and quality  Donor site: Functional and cosmetic morbidity  Patient: Medical and oncologic status Vascular status The majority of head and neck cancer patients are smokers, and are middle aged or older. Therefore one has to carefully assess the peripheral circulation and the quality of the skin. Severe atherosclerosis is not necessarily a contraindication to free flap surgery; in the authors' experience, with careful suturing, rigid, hard arterial walls of flap vessels actually splint and keep an anastomosis patent. Enquire about a history of intermittent claudication, deep vein thrombosis, limb trauma and varicose veins; previous trauma or fractures may warrant taking x-rays. An Allen test should be done prior to harvesting a RFFF to assess whether collateral ulnar arterial supply to the hand is sufficient if radial artery supply is lost (Table 1).
Aligned Carbon Nanotubes-Based Radiofrequency Transistors for Amplitude Amplification and Frequency Conversion at Millimeter Wave Band

Jiale Qian,Xiaohan Cheng,Jianshuo Zhou,Juexian Cao,Li Ding

DOI: https://doi.org/10.1021/acsnano.3c02739

IF: 17.1

2023-07-19

ACS Nano

Abstract:Aligned carbon nanotubes (ACNTs) have been considered as a promising candidate semiconductor with great potential in radiofrequency (RF) electronics due to their high carrier mobility/saturation velocity and small intrinsic capacitance. However, almost all of previously reported works focused on only the cutoff frequency, which is far from enough for practical RF application. In this work, given the speed advantage of ACNTs, we further explore amplitude amplification and frequency conversion...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Carbon nanotube radio-frequency electronics

Donglai Zhong,Zhiyong Zhang,Lian-Mao Peng

DOI: https://doi.org/10.1088/1361-6528/aa6a9e

IF: 3.5

2017-05-05

Nanotechnology

Abstract:Carbon nanotube (CNT) is considered a promising material for radio-frequency (RF) applications, owing to its high carrier mobility and saturated drift velocity, as well as ultra-small intrinsic gate capacitance. Here, we review progress on CNT-based devices and integrated circuits for RF applications, including theoretical projection of RF performance of CNT-based devices, preparation of CNT materials, fabrication, optimization of RF field-effect transistors (FETs) structures, and ambipolar FET-based RF applications, and we outline challenges and prospects of CNT-based RF applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Carbon Nanotubes As Cold Cathodes

Kenneth B. K. Teo,Eric Minoux,Ludovic Hudanski,Franck Peauger,Jean-Philippe Schnell,Laurent Gangloff,Pierre Legagneux,Dominique Dieumegard,Gehan A. J. Amaratunga,William I. Milne

DOI: https://doi.org/10.1038/437968a

IF: 64.8

2005-01-01

Nature

Abstract:To communicate, spacecraft and satellites rely on microwave devices, which at present are based on relatively inefficient thermionic electron sources that require heating and cannot be switched on instantaneously. Here we describe a microwave diode that uses a cold-cathode electron source consisting of carbon nanotubes 1 and that operates at high frequency and at high current densities. Because it weighs little, responds instantaneously and has no need of heating, this miniaturized electron source should prove valuable for microwave devices used in telecommunications.
Gigahertz Integrated Circuits Based on Carbon Nanotube Films

Donglai Zhong,Zhiyong Zhang,Li Ding,Jie Han,Mengmeng Xiao,Jia Si,Lin Xu,Chenguang Qiu,Lian-Mao Peng

DOI: https://doi.org/10.1038/s41928-017-0003-y

IF: 33.255

2017-01-01

Nature Electronics

Abstract:Progress in the controlled synthesis and post-growth treatment of carbon nanotubes has led to the fabrication of nanotube-based field-effect transistors with intrinsic performance close to the ballistic limits. However, nanotube-based integrated circuits (ICs) developed to date typically have a working frequency of less than 1 MHz, which is well below the working frequency of silicon ICs. Here we show that the speed of carbon nanotube ICs can be significantly improved by optimizing device structure and fabrication processes, yielding ICs that work in the gigahertz regime. Based on high-performance nanotube film field-effect transistors, five-stage ring oscillators were batch fabricated and shown to exhibit an oscillation frequency of up to 5.54 GHz. This is twenty times higher than that of the leading nanotube IC (a five-stage ring oscillator with an oscillation frequency of 282 MHz).
Carbon Nanotube Network Film-Based Ring Oscillators with Sub 10-Ns Propagation Time and Their Applications in Radio-Frequency Signal Transmission

Yingjun Yang,Li Ding,Hengjia Chen,Jie Han,Zhiyong Zhang,Lian-Mao Peng

DOI: https://doi.org/10.1007/s12274-017-1632-1

IF: 9.9

2017-01-01

Nano Research

Abstract:We have fabricated top-gated ambipolar field-effect transistors (FETs) based on solution-derived carbon nanotube (CNT) network films, and then constructed inverters and ring oscillators (ROs) that can work under supply voltages as low as 0.2 V owing to the high uniformity of the devices. Significant improvements were achieved in the performance of these CNT-based ambipolar FETs and CMOS-like circuits by scaling down the gate length of the CNT FETs and optimizing the device structure and RO layout. In particular, the optimized five-stage RO is shown to present a record high oscillation frequency of up to 17.4 MHz with a propagation time of 5.6 ns at a 12-V working voltage. The CNT film-based ROs were used as carrier-wave generators in radio-frequency systems to demonstrate a complete signal transmission process. These results suggest that CNT thin film-based FETs and integrated circuits may soon find their way to radio-frequency applications with a frequency band of 13.56 MHz.
Terahertz metal-oxide-semiconductor transistors based on aligned carbon nanotube arrays

Zhiyong Zhang,Jianshuo Zhou,Li Ding,Lin Xu,Xinlai Cheng,Zipeng Pan,Haitao Li,Maguang Zhu,Lijun Liu,Huiwen Shi,Lian‐Mao Peng

DOI: https://doi.org/10.21203/rs.3.rs-2526224/v1

2023-01-01

Abstract:Abstract The development of wireless communications is driving the need for compact radiofrequency (RF) devices with up to terahertz (THz) frequency and fabrication processes compatible with that of complementary-metal-oxide-semiconductor (CMOS) transistors. Aligned carbon nanotube (A-CNT) film is a promising candidate semiconductor that can be used to build both CMOS field-effect transistors (FETs) for digital integrated circuits (ICs) and radiofrequency (RF) transistors with frequencies beyond 1 THz for analogue ICs. Herein, we demonstrate the first MOS FET with a cut-off frequency beyond 1 THz on a high-quality A-CNT array film, and with a carrier mobility of 2,000 cm 2 V − 1 s − 1 and better scaling characteristics than all semiconductors, including GaAs and InP. The fabricated CNT MOS FETs present a record performance that includes an on-state current of 3.02 mA µm − 1 , a peak transconductance of 2.17 mS µm − 1 at a bias of − 1 V, and a saturation velocity of 3.5 × 10 7 cm s − 1 . Through optimising device structure and fabrication process, in particular the introduction of a Y-gate, a 35 nm-gate length A-CNT MOS FET is fabricated that shows extrinsic current-gain/power-gain and cut-off frequencies of up to 551 GHz/1024 GHz, representing the fastest MOS FET for RF applications. Furthermore, CNT-based mmWave band (30 GHz) RF amplifiers are demonstrated with a high gain of 21.4 dB.
Microwave Devices - Carbon Nanotubes As Cold Cathodes

Kenneth B K Teo,Eric Minoux,Ludovic Hudanski,Franck Peauger,Jean-Philippe Schnell,Laurent Gangloff,Pierre Legagneux,Dominique Dieumegard,Gehan A J Amaratunga,William I Milne

DOI: https://doi.org/10.1038/437968a

IF: 64.8

2005-01-01

Nature

Abstract:To communicate, spacecraft and satellites rely on microwave devices, which at present are based on relatively inefficient thermionic electron sources that require heating and cannot be switched on instantaneously. Here we describe a microwave diode that uses a cold-cathode electron source consisting of carbon nanotubes and that operates at high frequency and at high current densities. Because it weighs little, responds instantaneously and has no need of heating, this miniaturized electron source should prove valuable for microwave devices used in telecommunications.
Terahertz Transistors Based on Aligned Carbon Nanotube Arrays

Ding Li,Zhang Zhiyong

DOI: https://doi.org/10.1007/s11432-021-3355-0

2021-01-01

Science China Information Sciences

Abstract:>The wireless communication technology has greatly promoted the industry’s demand for higher operating frequencies and wider bandwidth devices. In recent years, the rise of 5 G and 6 G communication technologies needs to increase the operating frequency of devices to a frequency band above 90 GHz.
Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping.

Xinyue Zhang,Pengkun Sun,Nan Wei,Jia Si,Xiaojing Li,Jinhan Ba,Jiawen Wang,Dongshun Qin,Ningfei Gao,Lei Gao,Haitao Xu,Lian-Mao Peng,Ying Wang

DOI: https://doi.org/10.1021/acsnano.3c06280

IF: 17.1

2024-01-01

ACS Nano

Abstract:Diodes based on p-n junctions are fundamental building blocks for numerous circuits, including rectifiers, photovoltaic cells, light-emitting diodes (LEDs), and photodetectors. However, conventional doping techniques to form p- or n-type semiconductors introduce impurities that lead to Coulomb scattering. When it comes to low-dimensional materials, controllable and stable doping is challenging due to the feature of atomic thickness. Here, by selectively depositing dielectric layers of Y2O3 and AlN, direct formation of wafer-scale carbon-nanotube (CNT) diodes are demonstrated with high yield and spatial controllability. It is found that the oxygen interstitials in Y2O3, and the oxygen vacancy together with Al-Al bond in AlN/Y2O3 electrostatically modulate the intrinsic CNTs channel, which leads to p- and n-type conductance, respectively. These CNTs diodes exhibit a high rectification ratio (>104) and gate-tunable rectification behavior. Based on these results, we demonstrate the applicability of the diodes in electrostatic discharge (ESD) protection and photodetection.
Carbon Nanotube Radiofrequency Transistors with F T/f MAX of 376/318 GHz

Jianshuo Zhou,Li Ren,Haitao Li,Xiaohan Cheng,Zipeng Pan,Zhiyong Zhang,Li Ding,Lian-Mao Peng

DOI: https://doi.org/10.1109/led.2022.3227133

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:Aligned carbon nanotube (ACNT) array was regarded as an excellent channel material to build radio-frequency (RF) field-effect transistors (FETs) with an ultra-high frequency of up to THz regime due to the electrical performance advantages of high carrier mobility and saturation velocity, as well as low intrinsic capacitance. However, ACNT FET with extrinsic current-gain ( ${f}_{\text {T}}$ ) and maximum oscillation ( ${f}_{\text {MAX}}$ ) cut-off frequencies of simultaneously over 300 GHz has not yet been reported. In this letter, we report ACNT based RF FETs with record high dc performance of on-state current about 2.2mA/ $\boldsymbol {\mu } \text{m}$ and peak transconductance about 1.9mS/ $\boldsymbol {\mu } \text{m}$ at a bias of −1V. Especially, the ACNT based FETs show ${f}_{\text {T}}$ and ${f}_{\text {MAX}}$ of up to 376 and 318 GHz by scaling down gate length to 35 nm, indicating the actual RF performance into the THz regime. Radio-frequency amplifiers that exhibit power gain of over 24dB operating in K band is also demonstrated.
Carbon Nanotube Complementary Gigahertz Integrated Circuits and Their Applications on Wireless Sensor Interface Systems.

Lijun Liu,Li Ding,Donglai Zhong,Jie Han,Shuo Wang,Qinghai Meng,Chenguang Qiu,Xingye Zhang,Lian-Mao Peng,Zhiyong Zhang

DOI: https://doi.org/10.1021/acsnano.8b09488

IF: 17.1

2019-01-01

ACS Nano

Abstract:Along with ultralow-energy delay products and symmetric complementary polarities, carbon nanotube field-effect transistors (CNT FETs) are expected to be promising building blocks for energy-efficient computing technology. However, the work frequencies of the existing CNT-based complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are far below the requirement (850 MHz) in state-of-art wireless communication applications. In this work, we fabricated deep submicron CMOS FETs with considerably improved performance of n-type CNT FETs and hence significantly promoted the work frequency of CNT CMOS ICs to 1.98 GHz. Based on these high-speed and sensitive voltage-controlled oscillators, we then presented a wireless sensor interface circuit with working frequency up to 1.5 GHz spectrum. As a preliminary demonstration, an energy-efficient wireless temperature sensing interface system was realized combining a 150 mAh flexible Li-ion battery and a flexible antenna (center frequency of 915 MHz). In general, the CMOS-logic high-speed CNT ICs showed outstanding energy efficiency and thus may potentially advance the application of CNT-based electronics.
Aligned Carbon Nanotubes/Fibers for Applications in Vacuum Microwave Amplifiers

WI Milne,KBK Teo,E Minoux,O Groening,L Gangloff,L Hudanski,JP Schnell,D Dieumegard,F Peauger,IYY Bu,MS Bell,P Legagneux,G Hasko,GAJ Amaratunga

DOI: https://doi.org/10.1116/1.2161223

2006-01-01

Abstract:Most long-range telecommunication systems are based upon microwave links. The transmitters use microwave amplifiers which in the very near future will be required to work at up to 30–100GHz with output power in the region of a few tens of watts. Carbon nanotubes (CNTs), which exhibit extraordinary field emission properties because of their high electrical conductivity, ideal high aspect ratio whisker-like shape for geometrical field enhancement, and remarkable thermal stability, can be used as the emitter in such applications. This article will describe the plasma enhanced chemical vapor deposition growth of vertically aligned carbon nanotubes, and how well controlled arrays of such structures can be grown. We will also describe how high current densities of ∼1A∕cm2, under direct current and 1.5GHz direct modulation, can be obtained from CNT cathodes. These CNT cold cathodes offer considerable weight and size savings over conventional hot cathodes used in microwave applications (e.g., SATCOM, radar).
Radio frequency analog electronics based on carbon nanotube transistors

Coskun Kocabas,Hoon-sik Kim,Tony Banks,John A. Rogers,Aaron A. Pesetski,James E. Baumgardner,S. V. Krishnaswamy,Hong Zhang

DOI: https://doi.org/10.1073/pnas.0709734105

IF: 11.1

2008-02-05

Proceedings of the National Academy of Sciences

Abstract:The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies.

Project Oberon - the design of an operating system and compiler

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.

Radiofrequency Transistors Based on Aligned Carbon Nanotube Arrays

High-Speed Carbon Nanotube Photodetectors for 2 μm Communications

High-Speed Carbon Nanotube Photodetectors for 2 Μm Communications.

Carbon Nanotube Devices for Quantum Technology

Carbon Nanotube Based Radio Frequency Transistors For K-Band Amplifiers

Open Access Atlas of Otolaryngology, Head & Neck Operative Surgery Free Tissue Transfer Flaps in Head & Neck Reconstruction: Microvascular Anastomosis Technique

Aligned Carbon Nanotubes-Based Radiofrequency Transistors for Amplitude Amplification and Frequency Conversion at Millimeter Wave Band

Carbon nanotube radio-frequency electronics

Carbon Nanotubes As Cold Cathodes

Gigahertz Integrated Circuits Based on Carbon Nanotube Films

Carbon Nanotube Network Film-Based Ring Oscillators with Sub 10-Ns Propagation Time and Their Applications in Radio-Frequency Signal Transmission

Terahertz metal-oxide-semiconductor transistors based on aligned carbon nanotube arrays

Microwave Devices - Carbon Nanotubes As Cold Cathodes

Terahertz Transistors Based on Aligned Carbon Nanotube Arrays

Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping.

Carbon Nanotube Radiofrequency Transistors with F T/f MAX of 376/318 GHz

Carbon Nanotube Complementary Gigahertz Integrated Circuits and Their Applications on Wireless Sensor Interface Systems.

Aligned Carbon Nanotubes/Fibers for Applications in Vacuum Microwave Amplifiers

Radio frequency analog electronics based on carbon nanotube transistors