Abstract:Owing to the combination of high carrier mobility and saturation velocity, low intrinsic capacitance, and excellent stability, the carbon nanotube (CNT) has been considered as a perfect semiconductor to construct radio frequency (RF) fieldeffect transistors (FETs) and circuits with an ultrahigh frequency band. However, the reported CNT RF FETs usually exhibited poor real performance indicated by the as-measured maximum oscillation frequency (f(max)), and then the amplifiers, which are the most important and fundamental RF circuits, suffered from a low power gain and a low frequency band. In this work, we build RF transistors on solution-derived randomly orientated CNT films with improved quality and uniformity. The randomly orientated CNT film FETs exhibit the record as-measured maximum f(max) of 90 GHz, demonstrating the potential for over 28 GHz (at least one-third of 90 GHz) 5G mmWave (frequency range 2) applications. Benefiting from the large-scale uniformity of CNT films, FETs are designed and fabricated with a large channel width to present low internal resistance for the standard 50 Omega impedance matching guide line, which is critical to construct an RF amplifier. Furthermore, we first demonstrate amplifiers with a maximum power gain up to 11 dB and output third-order intercept point (OIP3) of 15 dBm, both at the K-band, which represents the record of a CNT amplifier and is even comparable with a commercial amplifier based on III-V RF transistors.

Carbon Nanotube Diodes Operating at Frequencies of Over 50 GHz

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.

Radiofrequency Transistors Based on Aligned Carbon Nanotube Arrays

High-Speed Carbon Nanotube Photodetectors for 2 μm Communications

High-Speed Carbon Nanotube Photodetectors for 2 Μm Communications.

Carbon Nanotube Based Radio Frequency Transistors For K-Band Amplifiers

Carbon nanotube Schottky diodes using Ti-Schottky and Pt-Ohmic contacts for high frequency applications

Aligned Carbon Nanotubes-Based Radiofrequency Transistors for Amplitude Amplification and Frequency Conversion at Millimeter Wave Band

Carbon nanotube radio-frequency electronics

Carbon Nanotubes As Cold Cathodes

Gigahertz Integrated Circuits Based on Carbon Nanotube Films

Carbon Nanotube Network Film-Based Ring Oscillators with Sub 10-Ns Propagation Time and Their Applications in Radio-Frequency Signal Transmission

Terahertz metal-oxide-semiconductor transistors based on aligned carbon nanotube arrays

Microwave Devices - Carbon Nanotubes As Cold Cathodes

Terahertz Transistors Based on Aligned Carbon Nanotube Arrays

Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping.

Carbon Nanotube Radiofrequency Transistors with F T/f MAX of 376/318 GHz

Carbon Nanotube Complementary Gigahertz Integrated Circuits and Their Applications on Wireless Sensor Interface Systems.

Aligned Carbon Nanotubes/Fibers for Applications in Vacuum Microwave Amplifiers

Radio frequency analog electronics based on carbon nanotube transistors

Integrated Molecular Diode As 10 MHz Half-Wave Rectifier Based on an Organic Nanostructure Heterojunction