Abstract:With a thin Ge nanolayer deposited on a prealloyed metallic stacked precursor, the formation of ZnSe is more favorable over Cu2Se due to larger negative Gibbs free energy for ZnSe when selenium reacts with Cu‐Zn alloy based on thermodynamic calculation. Cu from decomposed Cu‐Zn alloy exhibited a tendency to alloy with metal Sn, forming Cu‐Sn alloy and effecting subsequent kesterite formation pathway. Kesterite is an earth‐abundant energy material with high predicted power conversion efficiency, making it a sustainable and promising option for photovoltaics. However, a large open circuit voltage Voc deficit due to non‐radiative recombination at intrinsic defects remains a major hurdle, limiting device performance. Incorporating Ge into the kesterite structure emerges as an effective approach for enhancing performance by manipulating defects and morphology. Herein, how different amounts of Ge affect the kesterite growth pathways through the combination of advanced microscopy characterization techniques are systematically investigated. The results demonstrate the significance of incorporating Ge during the selenization process of the CZTSSe thin film. At high temperature, the Ge incorporation effectively delays the selenization process due to the formation of a ZnSe layer on top of the metal alloys through decomposition of the Cu‐Zn alloy and formation of Cu‐Sn alloy, subsequently forming of Cu‐Sn‐Se phase. Such an effect is compounded by more Ge incorporation that further postpones kesterite formation. Furthermore, introducing Ge mitigates detrimental "horizontal" grain boundaries by increasing the grain size on upper layer. The Ge incorporation strategy discussed in this study holds great promise for improving device performance and grain quality in CZTSSe and other polycrystalline chalcogenide solar cells.

Visualization of Anion Vacancy Defect Annihilation in CZTSe Solar Cells by Hydrogen-Assisted Selenization with In Operando X-ray Nanoprobe Studies

Rational Defect Passivation of Cu2ZnSn(S,Se)4 Photovoltaics with Solution-Processed Cu2ZnSnS4:Na Nanocrystals.

Investigation into complex defect properties of near-stoichiometric Cu2ZnSnSe4 thin film

Passivation of Deep‐Level Defects through Chemical Environment Regulation for Efficient CZTSSe Solar Cells Based on Active Selenium Adsorption–Desorption Process

Optimization of the Selenization Pressure Enabling Efficient Cu 2 ZnSn(S,Se) 4 Solar Cells

Benign Solutions and Innovative Sequential Annealing Processes for High Performance Cu2ZnSn(Se,S)4 Photovoltaics

Unveiling the Role of Ge in CZTSSe Solar Cells by Advanced Micro‐To‐Atom Scale Characterizations

Unveiling the Selenization Reaction Mechanisms in Ambient Air-Processed Highly Efficient Kesterite Solar Cells

Unveiling the Effect of CZTSSe Quantum Superlattice on the Interfacial and Optical Properties of CZTS Kesterite Solar Cell

Passivating SnZn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

Defect-assisted Nonradiative Recombination in Cu2ZnSnSe4 : A Comparative Study with Cu2ZnSnS

Defect-assisted nonradiative recombination in Cu 2 ZnSn Se 4 : A comparative study with Cu 2 ZnSn S 4

Suppressing Element Inhomogeneity Enables 14.9% Efficiency CZTSSe Solar Cells

10.24% Efficiency of Flexible Cu2 ZnSn(S,Se)4 Solar Cells by Pre-Evaporation Selenization Technique

An investigation on phase transition for as-sputtered Cu 2 ZnSnSe 4 absorbers during selenization

Zinc Vacancy-Promoted Photocatalytic Activity and Photostability of ZnS for Efficient Visible-Light-driven Hydrogen Evolution

An Investigation on the Relationship Between Open Circuit Voltage and Grain Size for CZTSSe Thin Film Solar Cells Fabricated by Selenization of Sputtered Precursors

Multinary Alloying Suppresses Defect Formation in Emerging Inorganic Solar Cells

Impact of Cation Substitution in (Ag x Cu 1− x ) 2 ZnSnSe 4 Absorber‐Based Solar Cells toward 10% Efficiency: Experimental and Theoretical Analyses

Defect Engineering in Earth‐Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials Via Ga3+‐Doping for over 12% Efficient Solar Cells

Interfacial Engineering to Improve Cu2ZnSnX4 (X = S, Se) Solar Cell Efficiency