Abstract:With a thin Ge nanolayer deposited on a prealloyed metallic stacked precursor, the formation of ZnSe is more favorable over Cu2Se due to larger negative Gibbs free energy for ZnSe when selenium reacts with Cu‐Zn alloy based on thermodynamic calculation. Cu from decomposed Cu‐Zn alloy exhibited a tendency to alloy with metal Sn, forming Cu‐Sn alloy and effecting subsequent kesterite formation pathway. Kesterite is an earth‐abundant energy material with high predicted power conversion efficiency, making it a sustainable and promising option for photovoltaics. However, a large open circuit voltage Voc deficit due to non‐radiative recombination at intrinsic defects remains a major hurdle, limiting device performance. Incorporating Ge into the kesterite structure emerges as an effective approach for enhancing performance by manipulating defects and morphology. Herein, how different amounts of Ge affect the kesterite growth pathways through the combination of advanced microscopy characterization techniques are systematically investigated. The results demonstrate the significance of incorporating Ge during the selenization process of the CZTSSe thin film. At high temperature, the Ge incorporation effectively delays the selenization process due to the formation of a ZnSe layer on top of the metal alloys through decomposition of the Cu‐Zn alloy and formation of Cu‐Sn alloy, subsequently forming of Cu‐Sn‐Se phase. Such an effect is compounded by more Ge incorporation that further postpones kesterite formation. Furthermore, introducing Ge mitigates detrimental "horizontal" grain boundaries by increasing the grain size on upper layer. The Ge incorporation strategy discussed in this study holds great promise for improving device performance and grain quality in CZTSSe and other polycrystalline chalcogenide solar cells.

An Investigation on the Relationship Between Open Circuit Voltage and Grain Size for CZTSSe Thin Film Solar Cells Fabricated by Selenization of Sputtered Precursors

Grain growth of CZTSSe via nanocrystal selenization

An investigation on phase transition for as-sputtered Cu 2 ZnSnSe 4 absorbers during selenization

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

Effects of Selenium Atmosphere on Grain Growth for CZTSe Absorbers Fabricated by Selenization of As-Sputtered Precursors

Using soda-lime glass transition temperature to enhance the efficiency of Cu2ZnSn(S,Se)4 solar cell

Segmented Control of Selenization Environment for High‐Quality Cu2ZnSn(S,Se)4 Films Toward Efficient Kesterite Solar Cells

10.24% Efficiency of Flexible Cu2 ZnSn(S,Se)4 Solar Cells by Pre-Evaporation Selenization Technique

Improving the Performance of Solution-Based CZTSSe Absorber by Selenization Annealing with Selenium Powder in Argon

Fabrication and Characterization of Cu2ZnSnSe4 Thin-Film Solar Cells Using a Single-Stage Co-Evaporation Method: Effects of Film Growth Temperatures on Device Performances

Influence of H2Se Concentration on Se-rich CZTSSe Absorbers Sputtered with a Ceramic Quaternary Target

Passivation of Deep‐Level Defects through Chemical Environment Regulation for Efficient CZTSSe Solar Cells Based on Active Selenium Adsorption–Desorption Process

Cu2ZnSnSSe4 Solar Cells with 9.6% Efficiency Via Selenizing Cu-Zn-Sn-S Precursor Sputtered from a Quaternary Target

Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

Surprising Efficiency Enhancement of Cu 2 ZnSn(S,Se) 4 Solar Cells with Abnormal Zn/Sn Ratios

Effect of Self‐Seed Inducing on the Growth Mechanism and Photovoltaic Performance of Cu 2 ZnSnSe 4 Thin Films

Exploring the optimal two-step selenization process to enhance the performance of ionic liquid solution based Cu2ZnSn(S,Se)4 thin film solar cells

Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells

Influences of Cu Concentration on Electrical Properties of CZTSSe Absorbers and Their Device Performances

Unveiling the Role of Ge in CZTSSe Solar Cells by Advanced Micro‐To‐Atom Scale Characterizations

CZTSSe solar cell with an efficiency of 10.19% based on absorbers with homogeneous composition and structure using a novel two-step annealing process