Bipolar Junction Transistors: Van Der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals (adv. Funct. Mater. 17/2019)
Liwei Liu,Ningsheng Xu,Yu Zhang,Peng Zhao,Huanjun Chen,Shaozhi Deng
DOI: https://doi.org/10.1002/adfm.201970113
IF: 19
2019-01-01
Advanced Functional Materials
Abstract:Advanced Functional MaterialsVolume 29, Issue 17 1970113 FrontispieceFree Access Bipolar Junction Transistors: Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two-Dimensional Atomic Crystals (Adv. Funct. Mater. 17/2019) Liwei Liu, Liwei Liu State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorNingsheng Xu, Ningsheng Xu State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorYu Zhang, Yu Zhang State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorPeng Zhao, Peng Zhao State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorHuanjun Chen, Huanjun Chen State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorShaozhi Deng, Shaozhi Deng State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this author Liwei Liu, Liwei Liu State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorNingsheng Xu, Ningsheng Xu State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorYu Zhang, Yu Zhang State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorPeng Zhao, Peng Zhao State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorHuanjun Chen, Huanjun Chen State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorShaozhi Deng, Shaozhi Deng State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this author First published: 17 April 2019 https://doi.org/10.1002/adfm.201970113AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract In article number 1807893, Shaozhi Deng and co-workers present a study of Van der Waals bipolar junction transistors based on vertically stacked 2D materials (V2D-BJT), which use a MoS2/WSe2/MoS2 heterostructure in an n-p-n configuration (represented by the image). The V2D-BJT shows excellent characteristics of a low power amplifier, and excellent gas sensing performance with fast response and recovery times. Volume29, Issue17April 25, 20191970113 RelatedInformation