Abstract:High‐performance flexible OTFTs with low operational voltages are fabricated by combining a dielectric layer (pV3D3) and a crystalline organic semiconductor (Ph‐BTBT‐10). The resulting transistors exhibit exceptional charge carrier mobility (up to 7 cm2 V−1s−1) and low threshold voltage (VT ≈ 0 V). Extended air stability, mechanical flexibility, and uniform performance during large‐scale glass and parylene substrate fabrication are maintained by them. For applications involving the implantation of organic thin‐film transistors (OTFTs) in flexible environments, maintaining uniform device performance and ultrathin profiles with excellent mechanical stability is crucial for dynamic deformable conditions. This study presents high‐performance, mechanically flexible ultrathin OTFTs with a thickness under 5 μm, designed to be scalable for utilization in large areas. The OTFTs utilized an organosilicon polymer dielectric layer synthesized via initiated chemical vapor deposition combined with the crystalline organic semiconductor 2‐Decyl‐7‐phenyl[1]benzothieno[3,2‐b][1]benzothiophene (Ph‐BTBT‐10). Compared with conventional organic transistors, the OTFTs exhibited exceptional features, such as a charge carrier mobility of up to 7 cm2 V−1 s−1 and a near‐zero threshold voltage. Their performance is showcased across 900 devices on a 10 cm × 10 cm substrate to ensure uniformity and scalability. Additionally, the OTFTs demonstrate remarkable resilience to mechanical deformation, with a 97.4% mobility retention rate under a 20% tensile compression. After 1000 cycles of repeated deformation stress, they maintain a robust 94.6% performance level compared with the initial state. In summary, the ultrathin flexible OTFTs exhibit exceptional resilience to mechanical deformation, extended air exposure, uniformity in large arrays, and high mobility. This makes them promising for diverse applications, such as in vivo organ monitoring and skin displays.

High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C

Oxide TFTs with S/D-contacts patterned by high-resolution reverse-offset printed resist layers

Printed dual-gate organic thin film transistors and PMOS inverters on flexible substrates: role of top gate electrode

DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate

Bendable metal oxide thin-film transistors and circuits for analog electronics applications

Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect

Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation

Development of Materials and Printing Methods for Fabrication of Thin-Film Transistors on Flexible Substrates

Flexible Organic Thin-Film Transistors with High Mechanical Stability on Polyimide Substrate by Chemically Plated Silver Electrodes

Large‐Area Processable Ultrathin Organic Transistors with High Mobility and Mechanical Stabilities

Printed Carbon Nanotube Thin Film Transistors Based on Perhydropolysilazane-Derived Dielectrics for Low Power Flexible Electronics

Transfer Printing As a Method for Fabricating Hybrid Devices on Flexible Substrates

High yield manufacturing of fully screen-printed organic electrochemical transistors

43.1: Invited Paper: Large‐area and High‐performance Printed Carbon Nanotube and Metal Oxide Thin Film Transistors and Their Applications

Low-temperature solution-processed flexible metal oxide thin-film transistors via laser annealing

High-Performance All-Printed Amorphous Oxide FETs and Logics with Electronically Compatible Electrode/Channel Interface

Scalable, High-Performance Printed InO x Transistors Enabled by Ultraviolet-Annealed Printed High- k AlO x Gate Dielectrics

Inkjet Printing PVP Dielectric for Flexible Thin Film Transistor

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Low-Temperature Fabrication of Indium Oxynitride Thin-Film Transistors via Plasma-Assisted Solution Process