Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes

Khadiza Ali,Laura Fernández,Mohammad A Kherelden,Anna A Makarova,Igor Píš,Federica Bondino,James Lawrence,Dimas G de Oteyza,Dmitry Yu Usachov,Denis V Vyalikh,F Javier García de Abajo,Zakaria M Abd El-Fattah,J Enrique Ortega,Frederik Schiller
DOI: https://doi.org/10.1002/advs.202101455
Abstract:Monolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano- and opto-electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integration with other two-dimensional materials, and hence, novel routes of synthesis beyond exfoliation. Here, a disruptive approach is demonstrated, namely, imprinting the lateral pattern of an atomically stepped one-dimensional template into a hBN monolayer. Specifically, hBN is epitaxially grown on vicinal Rhodium (Rh) surfaces using a Rh curved crystal for a systematic exploration, which produces a periodically textured, nanostriped hBN carpet that coats Rh(111)-oriented terraces and lattice-matched Rh(337) facets with tunable width. The electronic structure reveals a nanoscale periodic modulation of the hBN atomic potential that leads to an effective lateral semiconductor multi-stripe. The potential of such atomically thin hBN heterostructure for future applications is discussed.
What problem does this paper attempt to address?