Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Experimental Studies on the Dynamic Memcapacitance Modulation of the ReO3@ReS2 Composite Material-Based Diode

Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

ITO/polymer/Al from diode-like to memory device: electroforming, multilevel resistive switching, and quantum point contact

Evolution between CRS and NRS behaviors in MnO2@TiO2 nanocomposite based memristor for multi-factors-regulated memory applications

Coexistence of resistive capacitive and virtual inductive effects in memristive devices

Memristors for Memory and Computing Applications

Cu x S nanosheets with controllable morphology and alignment for memristor devices

Evolution Between CRS and NRS Behaviors in MnO 2 @TiO 2 Nanocomposite Based Memristor for Multi-factors-regulated Memory Applications

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

Molecular dynamics simulations of oxide memristors: Crystal field effects

Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au-Co3O4 Thin-Film Memristors

Ultrathin Anion Conductors Based Memristor

Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability

The role of ion transport phenomena in memristive double barrier devices

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Design Of High-Performance Memristor Cell Using W-Implanted Sio2 Films

Improved resistive switching performance and mechanism analysis of MoO 3 nanorods based memristors

Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C-H center dot center dot center dot N Interaction and Anion Radicals for Stable ReRAM Performance

Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:ms

Pseudo-Capacitive Behavior of Three-Dimensional Ruthenium Oxide Microelectrode Prepared by MEMS Technology