Abstract:This study reviews the current state of III‐nitride synthesis on different 2D materials for a variety of flexible applications, meanwhile identifying key advances in this rapidly accelerating field. The focus of this study is to provide guidelines on the exfoliation of epitaxial layers using 2D materials, with the aim of fabricating flexible nitride devices. Group III‐nitrides have attracted significant attention in recent years for their wide tunable band‐gaps and excellent optoelectronic capabilities, which are advantageous for several applications including light‐emitting diodes, lasers, photodetectors, and large‐size low‐cost power electronic devices. However, conventional epitaxy accompanied by the covalent bond formation renders the transfer of nitride epilayers difficult, thereby limiting the application potential of nitrides in wearable and flexible electronics. Furthermore, interfacial covalent bonds also limit substrate selection and hinder the development of heterogeneous integration between nitrides and other material systems. 2D materials can mitigate these problems significantly. On the one hand, due to the weak van der Waals forces between the layers of 2D materials, influences of lattice mismatch can be avoided to improve crystal quality. On the other hand, delamination and transfer of nitride epilayers can be achieved easily. Therefore, this study focuses on providing comprehensive guidelines regarding the exfoliation of epitaxial layers using 2D materials to provide new design freedoms for nitride devices. Different 2D buffers and release layers have also been discussed. Furthermore, the limitations, promising solutions, future directions, and applicability of this strategy to flexible nitride devices are presented.

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