Fabrication strategies of flexible light sources based on micro/nano III-nitride LEDs
Julien BoschChristophe DurandBlandine AlloingMaria Tchernychevaa CNRS,CRHEA,Sophia Antipolis,Université Côte d'Azur,Valbonne,Franceb CEA Grenoble INP,IRIG,PHELIQS,Université Grenoble Alpes,Grenoble,Francec Centre de Nanosciences et de Nanotechnologies (C2N),University Paris-Saclay,Palaiseau,FranceJulien Bosch received his master's degree in engineering and material science in 2020,at the Grenoble INP institute. In 2023,he obtained his Ph.D. from the Côte d'Azur university at the CRHEA-CNRS Laboratory. His work focuses on the growth of InGaN/GaN core–shell nanowire structures,and their integration into flexible LEDs and displays.Maria Tchernycheva received her PhD in physics from the University Paris Sud,Orsay (France) in 2005,then worked as a postdoctoral researcher at the Laboratory for Photonics and Nanostructures,CNRS,focusing on the growth of III-V semiconductor nanowires by molecular beam epitaxy. In 2006,she joined CNRS and is now working as a director of research at the Center of Nanosciences and Nanotechnologies,University Paris Saclay. Her research encompasses the fabrication and testing of novel optoelectronic devices based on semiconductor nanowires with a focus on LEDs. She published more than 200 articles in international journals,received the Madeleine Lecoq award from the French Academy of Sciences in 2006 and was laureate of the ERC grant in 2014.Blandine Alloing received her PhD in Physics from the Swiss Federal Institute of Technology in Lausanne (EPFL) in 2006. She worked at that time on the MBE growth of InGaAs quantum dots for single photon sources. After a postdoctoral position at the Swiss Federal Institute of Technology (ETH) in Zurich,she joined in 2009 the Center of Research for Heteroepitaxy and its Application (CRHEA) from CNRS and is working on the growth and characterization of III-Nitride nanostructures,in particular nanowires,for optoelectronic devices.Christophe Durand received his PhD in Physics from the Université Joseph Fourier in Grenoble in 2004. After,as a postdoctoral fellowship at the Institut National de la Recherche Scientifique (INRS) in Varennes (Québec) to develop novel oxides for nanotechnologies,he works as an associate professor at Université Grenoble Alpes from 2006 in the PHELIQS Lab of the CEA-Grenoble. He works on the growth of III-N nitride semiconductors focused on nanowires for the development of novel optoelectronic devices from the visible to UV range. He participated in the know-how transfer of nanowire LEDs on silicon for the creation of the start-up Aledia in 2012 and he developed international collaborations with EPFL,INESC and Tyndall.
DOI: https://doi.org/10.1080/15980316.2024.2310638
2024-02-06
Journal of Information Display
Abstract:The development of flexible optoelectronic devices has led to the appearance of new applications, ranging from wearable displays to medical implants. Hence, strategies have been developed to make flexible every component of the devices, including the light-emitting part. One such approach relies on the use of micro- or nano-light emitting diodes (LEDs) for their reduced footprint, allowing them to be easily separated from their substrate and embedded in a flexible matrix. In this review, the authors provide a comparison between the different geometries obtained by the growth of III-nitride structures for the fabrication of flexible devices. The processes used for their fabrication are then presented in detail. Last, an overview of the state of the art regarding flexible nanowire-based LED is provided, as well as some perspectives regarding their improvement.
materials science, multidisciplinary