Abstract:Transition metal disulfide compounds (TMDCs) emerges as the promising candidate for new-generation flexible (opto-)electronic device fabrication. However, the harsh growth condition of TMDCs results in the necessity of using hard dielectric substrates, and thus the additional transfer process is essential but still challenging. Here, an efficient strategy for preparation and easy separation-transfer of high-uniform and quality-enhanced MoS2 via the precursor pre-annealing on the designed graphene inserting layer is demonstrated. Based on the novel strategy, it achieves the intact separation and transfer of a 2-inch MoS2 array onto the flexible resin. It reveals that the graphene inserting layer not only enhances MoS2 quality but also decreases interfacial adhesion for easy separation-transfer, which achieves a high yield of ≈99.83%. The theoretical calculations show that the chemical bonding formation at the growth interface has been eliminated by graphene. The separable graphene serves as a photocarrier transportation channel, making a largely enhanced responsivity up to 6.86 mA W-1, and the photodetector array also qualifies for imaging featured with high contrast. The flexible device exhibits high bending stability, which preserves almost 100% of initial performance after 5000 cycles. The proposed novel TMDCs growth and separation-transfer strategy lightens their significance for advances in curved and wearable (opto-)electronic applications.

Van Der Waals Epitaxy of Functional MoO2 Film on Mica for Flexible Electronics

Van Der Waals Oxide Heteroepitaxy for Soft Transparent Electronics

Oxide Heteroepitaxy for Flexible Optoelectronics.

Van der Waals Epitaxy of Bismuth‐Based Multiferroic Layered Supercell Oxide Thin Films Integrated on Flexible Mica Substrate

Atomic Scale Understanding of the Epitaxy of Perovskite Oxides on Flexible Mica Substrate

Flexible Transparent Heteroepitaxial Conducting Oxide with Mobility Exceeding 100 Cm2 V−1 S−1 at Room Temperature

Epitaxial Lift-Off of Centimeter-Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics.

Flexible strategy of epitaxial oxide thin films

Heteroepitaxy of Fe3O4/Muscovite: A New Perspective for Flexible Spintronics.

Van Der Waals Epitaxy of Ultrathin Α-Moo3 Sheets on Mica Substrate with Single-Unit-cell Thickness

Flexible Heteroepitaxy of CoFe 2 O 4 /Muscovite Bimorph with Large Magnetostriction.

(Invited) Micatronics: A New Platform for Flexible X-Tronics

High stability of flexible perovskite transparent conductive oxide film via van der Waals heteroepitaxy

Flexible correlated 4d2 SrMoO3/mica thin films with enhanced optoelectronic performance and high bending stability

Large-scale and stacked transfer of bilayers MoS2devices on a flexible polyimide substrate

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Heteroepitaxial Cof'e2O4/Muscovite Bimorph with Large Magnetostriction for Flexible Electronics

Wafer-Scale Growth and Transfer of High-Quality MoS2 Array by Interface Design for High-Stability Flexible Photosensitive Device

van der Waals epitaxy for highly tunable all-inorganic transparent flexible ferroelectric luminescent films

Epitaxial growth of flexible 1T-VSe2 thin films on mica by pulsed laser deposition