Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Van Der Waals Epitaxy of Ultrathin Α-Moo3 Sheets on Mica Substrate with Single-Unit-cell Thickness

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Aqueous and mechanical exfoliation, unique properties, and theoretical understanding of MoO3 nanosheets made from free-standing α-MoO3 crystals: Raman mode softening and absorption edge blue shift

Sputter-grown two-dimensional α-MoO 3 thin films: Microstructure dependence on growth conditions

Anisotropic mechanical properties of α-MoO3 nanosheets

Synthesis of Nanometre-Thick MoO3 Sheets.

Physical Vapor Deposition Growth of Ultrathin Molybdenum Dioxide Nanosheets with Excellent Conductivity

Van Der Waals Epitaxy of Functional MoO2 Film on Mica for Flexible Electronics

In-plane anisotropy in van der Waals epitaxial MoS 2 on MoO 2 (010)

Growth of singly orientated MoSe2 monolayer on Al2O3(11 2 ̄ 0)

Van der Waals Epitaxy of Bismuth‐Based Multiferroic Layered Supercell Oxide Thin Films Integrated on Flexible Mica Substrate

Atomic Scale Understanding of the Epitaxy of Perovskite Oxides on Flexible Mica Substrate

Epitaxial Growth of Centimeter-Scale Single-Crystal MoS2 Monolayer on Au(111)

Anomalous narrow-band optical anisotropy of MoO2 crystal in the visible regime

Epitaxial Growth of &Lt;010>-Oriented MoO2 Nanorods on M-Sapphire

Van der Waals Heteroepitaxy of Te Crystallites/2H-MoTe2 Atomically Thin Films on GaAs Substrates by Using Metal-Organic Chemical-Vapor Deposition

Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices.

Self-condensation-assisted chemical vapour deposition growth of atomically two-dimensional MOF single-crystals

Infrared Permittivity of the Biaxial van der Waals Semiconductor α-MoO3 from Near- and Far-Field Correlative Studies