Abstract:Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones for high-density data storage applications. Lead Zirconate (PbZrO3) is considered the prototype material for antiferroelectricity, and indeed previous studies indicated that nanoscale PbZrO3 films exhibit ferroelectricity. The understanding of such phenomena from the microstructure aspect is crucial but still lacking. In this study, we fabricated a PbZrO3 film with thicknesses varying from 5 nm to 80 nm. Using Piezoresponse Force Microscopy, we discovered the film displayed a transition from antiferroelectric behaviour in the thicker areas to ferroelectric behaviour in the thinner ones, with a critical thickness between 10 and 15 nm. In this critical thickness range, a 12 nm PZO thin film was chosen for further study using aberration-corrected scanning transmission electron microscopy. The investigation showed that the film comprises both ferroelectric and ferrielectric phases. The ferroelectric phase is characterized by polarisation along the pseudocubic [011] projection direction. The positions of Pb, Zr, and O were determined using the integrated differential phase contrast method. This allowed us to ascertain that the ferroelectric PbZrO3 unit cell is half the size of that in the antiferroelectric phase on the ab plane. The observed unit cell is different from the electric field-induced ferroelectric rhombohedral phases. Additionally, we identified a ferrielectric phase with a unique up-up-zero-zero dipole configuration. The finding is crucial for understanding the performance of ultrathin antiferroelectric thin films and the subsequent design and development of antiferroelectric devices.

Ferroelectricity in ultra-thin perovskite films

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Disappearance of Ferroelectric Critical Thickness in Epitaxial Ultrathin Bazro3 Films

Unusual Ferroelectricity in Two-Dimensional Perovskite Oxide Thin Films.

Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films

Interface-Controlled Ferroelectricity at the Nanoscale

Possible Absence of Critical Thickness and Size Effect in Ultrathin Perovskite Ferroelectric Films

Giant Electrocaloric Effect in Ferroelectric Ultrathin Films at Room Temperature Mediated by Flexoelectric Effect and Work Function

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Ferroelectricity in thin films: Critical thickness and 180° stripe domains

Ferroelectricity In Pb(Zr0.5ti0.5)O-3 Thin Films: Critical Thickness And 180 Degrees Stripe Domains

Ferroelectricity in Pulsed Laser Deposited Ba(Fe1/2nb1/2)O-3 Thin Films

Probing the Surface Polarization of Ferroelectric Thin Films by X-ray Standing Waves

Surface polarization profile of ferroelectric thin films probed by X-ray standing waves and photoelectron spectroscopy

Study of Ferroelectic Properties in Ferroelectric/High-K Dielectric Bilayers

Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

Theory of ultrathin ferroelectrics: the case of CsGeBr$_3$

On the persistence of polar domains in ultrathin ferroelectric capacitors

Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si

Ferroelectricity in Low-Permittivity SrZrO3 Epitaxial Films

Thin-Film Ferroelectrics