Abstract:The high-temperature oxidation mechanism of silicon carbide (SiC) is crucial for designing thermal protection systems in aircraft. This study explored the oxidative chemical reaction processes and mechanism on SiC surface and interfaces within the temperature range of 300-2300 K by using reactive molecular dynamics simulation. The oxygen impact on the silica (SiOx) growth of the SiC surface was analyzed, which shows a progressive increase of silica thickness. The simulation results indicated that the oxidation process of SiC was a typical passive oxidation mechanism. With the environmental temperature rising and oxygen impact, the increase of oxidation thickness on the SiC surface undergoes three oxidizing reaction processes: little chemical adsorption of oxygen molecules on the initial surface, rapid oxidation of silicon and carbon, and dramatic oxidation of the interface between the oxidation layer and SiC. Additionally, this work studied the mechanism of oxidation thickness growth and chemical diffusion of oxygen. The oxidation rate is weakened according to the oxygen atom diffusion barrier effect of silica repulsion. Moreover, the kinetic parameters were statistically calculated by fitting the growth of Si-O bonds and their reaction rate constants. Subsequently, the activation energy and pre-exponential factors were derived by using the Arrhenius equation to model the chemical reaction kinetics of the thermal oxidation process. The chemical reaction behaviors of the two stages could be concluded as follows: (i) in stage I, the initial oxidation is reaction rate limiting; (ii) in stage II, SiC oxidation is limited by both the oxidation reaction rate and the oxygen diffusion coefficient of the oxidation layer. The activation energy of stage II increased compared with stage I due to the oxygen atoms diffusion barrier between the oxidation layers. This study on the oxidation and ablation mechanism of the SiC surface at the atomic scale would provide insight into understanding thermal oxidation behavior and the design of ceramic materials.

Adsorption of Oxygen and Nitrogen Atoms on the SiO2 Surface: Molecular Dynamics Calculation Based on the Quantum-Mechanical Potential

Adsorption-Oxidation Reaction Mechanism of NO on Na-ZSM-5 Molecular Sieves with a High Si/Al Ratio at Ambient Temperature

Infrared spectra of NO, N2O, NO2 and O2 adsorbed on SiO films

Theoretical Investigation of the Ammonia Adsorption Process on Si(100)-2×1 Surface

Ab initio calculation of the evolution of [SiN<sub>4-</sub><i><sub>n</sub></i>O<i><sub>n</sub></i>] tetrahedron during <i></i>-Si<sub>3</sub>N<sub>4</sub>(0001) surface oxidation

A Density-Functional Theory Study on the Chemisorption and Stm Images of Ag(100)/O Surface

Ab Initio Calculation of the Evolution of [SiN4‐nOn] Tetrahedron during β‐Si3N4(0001) Surface Oxidation

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Adsorption Of Ammonia On Si(100), (111) Surfaces - A Theoretical Approach

First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC ($11\bar20$) surface

Oxygen adsorption on small Si clusters: A full-potential linear-muffin-tin-orbital molecular-dynamics study

Molecular Dynamic Simulation on Substrate Surface of Coating Glass

Nitrogen adsorption on silica surfaces of nonporous and mesoporous materials

The experimental and MD studies of the sorption processes of organic molecules on the SiO2 surface

Theoretical Study of O-2 Molecular Adsorption and Dissociation on Silicon Carbide Nanotubes

A Chemical Kinetic Study of the Oxidation of Silane by Nitrous Oxide, Nitric Oxide and Oxygen

Temperature-Dependent Oxidation Behavior of Silicon Carbide Surface: Reactive Molecular Dynamics Simulations

Oxygen Adsorption on Zr(0001) Surfaces : Density Functional Calculations and a Multiple-Layer Adsorption Model

Oxygen Adsorption on Ag∕Si(111)-7×7 Surfaces

Adsorption and Reaction of N_2 on Oxygen Modified Mo(100) Surface

Oxygen Adsorption on Ag(111): A Density-Functional Theory Investigation