Abstract:Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe2/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (T = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A'1 (WSe2) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe2 monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe2 monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX0 at double resonance condition is observed for the first time.

Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe 2 -CrI 3 p-n Heterojunction

Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe2-CrI3 P-N Heterojunction.

Light Helicity Detector Based on 2D Magnetic Semiconductor CrI3

Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure

Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Multidimensional sensing of proximity magnetic fields via intrinsic activation of dark excitons in WSe$_2$/CrCl$_3$ heterostructure

Highly Efficient Spin Injection and Readout Across Van Der Waals Interface.

Spin-Selective Hole-Exciton Coupling in a V-Doped WSe2 Ferromagnetic Semiconductor at Room Temperature

Spin-selective magneto-conductivity in WSe$_2$

Spin Filtering Effect in All-Van Der Waals Heterostructures with WSe2 Barriers

Spin photovoltaic effect in magnetic van der Waals heterostructures

Interface depended electronic and magnetic properties of vertical CrI3/WSe2 heterostructures

Excellent spin diode and spin-dependent Seebeck effects in hetero-junctions based on ferromagnetic Cr 3 M 4 (M = Se, Te)

Spin- and Valley-Resolved Tunneling Magnetoresistance in a Ferromagnetic Transition Metal Dichalcogenide Planar Heterojunction Modulated by Polarized Light

Thickness-Dependent Excitonic Properties of WSe2/FePS3 van der Waals Heterostructures

Wide Field Imaging of van der Waals Ferromagnet Fe3GeTe2 by Spin Defects in Hexagonal Boron Nitride

Tailoring coercive fields and the Curie temperature via proximity coupling in WSe$_2$/Fe$_3$GeTe$_2$ van der Waals heterostructures

Self‐Intercalated Magnetic Heterostructures in 2D Chromium Telluride

Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe2/hBN Heterostructures by Photoluminescence Excitation Experiments

Magnetic proximity coupling to defects in a two-dimensional semiconductor

Observation of site-controlled localized charged excitons in CrI3/WSe2 heterostructures