Obesity-related parameters and colorectal adenoma development

Tae Jun Kim,J. Kim,Yoon-Ho Choi,S. Hong,Young-Ho Kim,D. Chang,P. Rhee,Min-Ji Kim,Sin-Ho Jung,H. Son

DOI: https://doi.org/10.1007/s00535-017-1319-0

2017-02-14

Journal of Gastroenterology

Abstract:

What problem does this paper attempt to address?

Tunable Ferromagnetism and Thermally Induced Spin Flip in Vanadium-doped Tungsten Diselenide Monolayers at Room Temperature

Yen Thi Hai Pham,Mingzu Liu,Valery Ortiz Jimenez,Fu Zhang,Vijaysankar Kalappattil,Zhuohang Yu,Ke Wang,Teague Williams,Mauricio Terrones,Manh-Huong Phan

DOI: https://doi.org/10.1002/adma.202003607

2020-05-02

Abstract:The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long-range ferromagnetism (FM) in TMDs is by introducing magnetic dopants to form a dilute magnetic semiconductor. Enhancing ferromagnetism in these semiconductors not only represents a key step towards modern TMD-based spintronics, but also enables exploration of new and exciting dimensionality-driven magnetic phenomena. To this end, we show tunable ferromagnetism at room temperature and a thermally induced spin flip (TISF) in monolayers of V-doped WSe2. As vanadium concentrations increase within the WSe2 monolayers the saturation magnetization increases, and it is optimal at ~4at.% vanadium; the highest doping/alloying level ever achieved for V-doped WSe2 monolayers. The TISF occurs at ~175 K and becomes more pronounced upon increasing the temperature towards room temperature. We demonstrate that TISF can be manipulated by changing the vanadium concentration within the WSe2 monolayers. We attribute TISF to the magnetic field and temperature dependent flipping of the nearest W-site magnetic moments that are antiferromagnetically coupled to the V magnetic moments in the ground state. This is fully supported by a recent spin-polarized density functional theory calculation. Our findings pave the way for the development of novel spintronic and valleytronic nanodevices based on atomically thin magnetic semiconductors and stimulate further studies in this rapidly expanding research field of 2D magnetism.

Materials Science
Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Seok Joon Yun,Dinh Loc Duong,Manh-Ha Doan,Kirandeep Singh,Thanh Luan Phan,Wooseon Choi,Young-Min Kim,Young Hee Lee

DOI: https://doi.org/10.48550/arXiv.1806.06479

2018-06-18

Materials Science

Abstract:Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-doping concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics.
Giant Valley Zeeman Splitting in Vanadium‐Doped WSe2 Monolayers

Frederico B. Sousa,Matheus J. S. Matos,Bruno R. Carvalho,Mingzu Liu,Alessandra Ames,Da Zhou,Geovani C. Resende,Zhuohang Yu,Lucas Lafeta,Marcos A. Pimenta,Mauricio Terrones,Marcio D. Teodoro,Helio Chacham,Leandro M. Malard

DOI: https://doi.org/10.1002/smll.202405434

IF: 13.3

2024-10-10

Small

Abstract:A giant valley Zeeman effect in vanadium‐doped WSe2 monolayers through circularly polarized magneto‐photoluminescence experiments at low temperature is reported. Ab initio calculations corroborate the experimental observations by confirming a magnetic ordering for the vanadium states. The results shed light on the promising magneto‐optical properties of vanadium‐doped WSe2 monolayers for spintronic and valleytronic functionalities. 2D dilute magnetic semiconductors (DMS) based on transition metal dichalcogenides (TMD) offer an innovative pathway for advancing spintronic technologies, including the potential to exploit phenomena such as the valley Zeeman effect. However, the impact of magnetic ordering on the valley degeneracy breaking and on the enhancement of the optical transitions g‐factors of these materials remains an open question. Here, a giant effective g‐factors ranging between ≈−27 and −69 for the bound exciton at 4 K in vanadium‐doped WSe2 monolayers, obtained through magneto‐photoluminescence (PL) experiments is reported. This giant g‐factor disappears at room temperature, suggesting that this response is associated with a magnetic ordering of the vanadium impurity states at low temperatures. Ab initio calculations for the vanadium‐doped WSe2 monolayer confirm the existence of magnetic ordering of the vanadium states, which leads to degeneracy breaking of the valence bands at K and K′. A phenomenological analysis is employed to correlate this splitting with the measured enhanced effective g‐factor. The findings shed light on the potential of defect engineering of 2D materials for spintronic applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

Taishen Li,Tao Yu,Xuefeng Cui,Kaixuan Zhang,Jianyi Liu,Qiushi Meng,Hongbing Cai,Nan Pan,Bing Wang,Zhenchao Dong,Xiaoping Wang

DOI: https://doi.org/10.48550/arxiv.1903.06899

2019-01-01

Abstract:Manipulating and reserving the valley pseudospin of excitons is one core aim in the two-dimensional transition metal dichalcogenides (TMDs). However, due to the strong electron-hole exchange and spin-orbit coupling interactions, the exciton recombination lifetime is subject to picosecond timescale intrinsically, and the valley polarization is hardly modulated by a moderate magnetic field. It is fortunate that interlayer and defect-localized excitons promise to overcome these difficulties by suppressing the above interactions. Here we clearly reveal that the valley polarization can be reversed and revived in the defect-localized excitons with a microsecond lifetime in AB-stacked WSe2-WS2 heterobilayer. Specifically, for the interlayer defect-localized exciton, the valley polarization is reversed and can be efficiently enhanced by a weak out-of-plane magnetic field (<0.4 T). In sharp contrast, the valley polarization of the intralayer defect-localized exciton can revive after a fast decay process and follows the direction of the moderate out-of-plane magnetic field (<3 T). We explain the reversed valley polarization with highly magnetic sensitivity by the delocalization of defect-localized holes under a weak magnetic field and the revival of valley polarization by the valley Zeeman effect under a moderate magnetic field. Our results demonstrate that the valley pseudospin of defect-localized excitons can be efficiently modulated by the external magnetic field and enrich both the understanding and the technical approaches on manipulating the valley dynamics in TMDs and their heterostructure.
Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Terry Y.T. Hung,Avinash Rustagi,Shengjiao Zhang,Pramey Upadhyaya,Zhihong Chen

DOI: https://doi.org/10.48550/arXiv.1908.01396

2019-08-05

Abstract:Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have successfully switched magnets with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) through spin orbit torque (SOT) mechanism. It is generally accepted that PMA magnets are preferred over IMA magnets in data storage applications owing to their large thermal stability even at ultra scaled dimensions. However, SOT switching of PMA magnets by conventional GSHE materials requires either a small external magnetic field, a local dipolar field, or introducing tilted anisotropy to break the symmetry with respect to the magnetization. To deterministically switch a PMA without any additional assistance, nonconventional GSHE materials that can generate spins with polarization perpendicular to the surfaces are needed. Several monolayer transition metal dichalcogenides (TMDs) have been predicted to generate such out of plane spins due to their 2D nature and unique band structures. Interestingly, opposite spins are locked to their respective sub-band in each K valley of the TMD valence band with substantially large energy splitting, which enables polarized spins to be accessible through electrical gating and spatially separated by electric field through the valley Hall effect (VHE). Therefore, spatial separation and accumulation of spins in these 2D TMDs are uniquely referred to as coupled valley and spin Hall effect. Here, we report an experiment of electrical generation of spin current with out of plane polarization in monolayer WSe2 and detection of spin signals through a nonlocal spin valve structure built on a lateral graphene spin diffusion channel that partially overlaps with WSe2.

Mesoscale and Nanoscale Physics
Light-controlled room temperature ferromagnetism in vanadium-doped tungsten diselenide semiconducting monolayers

Valery Ortiz Jimenez,Yen Thi Hai Pham,Mingzu Liu,Fu Zhang,Vijaysankar Kalappattil,Baleeswaraiah Muchharla,Tatiana Eggers,Dinh Loc Duong,Mauricio Terrones,Manh-Huong Phan

DOI: https://doi.org/10.48550/arXiv.2007.01505

2020-07-03

Abstract:Atomically thin transition metal dichalcogenide (TMD) semiconductors hold enormous potential for modern optoelectronic devices and quantum computing applications. By inducing long-range ferromagnetism (FM) in these semiconductors through the introduction of small amounts of a magnetic dopant, it is possible to extend their potential in emerging spintronic applications. Here, we demonstrate light-mediated, room temperature (RT) FM, in V-doped WS2 (V-WS2) monolayers. We probe this effect using the principle of magnetic LC resonance, which employs a soft ferromagnetic Co-based microwire coil driven near its resonance in the radio frequency (RF) regime. The combination of LC resonance with an extraordinary giant magneto-impedance effect, renders the coil highly sensitive to changes in the magnetic flux through its core. We then place the V-WS2 monolayer at the core of the coil where it is excited with a laser while its change in magnetic permeability is measured. Notably, the magnetic permeability of the monolayer is found to depend on the laser intensity, thus confirming light control of RT magnetism in this two-dimensional (2D) material. Guided by density functional calculations, we attribute this phenomenon to the presence of excess holes in the conduction and valence bands, as well as carriers trapped in the magnetic doping states, which in turn mediates the magnetization of the V-WS2 monolayer. These findings provide a unique route to exploit light-controlled ferromagnetism in low powered 2D spintronic devices capable of operating at RT.

Materials Science
Observation of Strong Valley Magnetic Response in Monolayer Transition Metal Dichalcogenide Alloys of Mo0.5W0.5Se2 and Mo0.5W0.5Se2/WS2 Heterostructures

Lishu Wu,Chunxiao Cong,Weihuang Yang,Yu Chen,Yan Shao,T. Thu Ha Do,Wen,Shun Feng,Chenji Zou,Hongbo Zhang,Bowen Du,Bingchen Cao,Jingzhi Shang,Qihua Xiong,Kian Ping Loh,Ting Yu

DOI: https://doi.org/10.1021/acsnano.0c10478

2020-01-01

Abstract:Monolayer transition metal dichalcogenide (TMD) alloys have emerged as a unique material system for promising applications in electronics, optoelectronics, and spintronics due to their tunable electronic structures, effective masses of carriers, and valley polarization with various alloy compositions. Although spin-orbit engineering has been extensively studied in monolayer TMD alloys, the valley Zeeman effect in these alloys still remains largely unexplored. Here we demonstrate the enhanced valley magnetic response in Mo0.5W0.5Se2 alloy monolayers and Mo0.5W0.5Se2/WS2 heterostructures probed by magneto-photoluminescence spectroscopy. The large g factors of negatively charged excitons (trions) of Mo0.5W0.5Se2 have been extracted for both pure Mo0.5W0.5Se2 monolayers and Mo0.5W0.5Se2/WS2 heterostructures, which are attributed to the significant impact of doping-induced strong many-body Coulomb interactions on trion emissions under an out-of-plane magnetic field. Moreover, compared with the monolayer Mo0.5W0.5Se2, the slightly reduced valley Zeeman splitting in Mo0.5W0.5Se2/WS2 is a consequence of the weakened exchange interaction arising from p-doping in Mo0.5W0.5Se2 via interlayer charge transfer between Mo0.5W0.5Se2 and WS2. Such interlayer charge transfer further evidences the formation of type-II band alignment, in agreement with the density functional theory calculations. Our findings give insights into the spin-valley and interlayer coupling effects in monolayer TMD alloys and their heterostructures, which are essential to develop valleytronic applications based on the emerging family of TMD alloys.
Spin-Stabilization by Coulomb Blockade in a Vanadium Dimer in WSe2

Samuel Stolz,Bowen Hou,Dan Wang,Azimkhan Kozhakhmetov,Chengye Dong,Oliver Gröning,Joshua A Robinson,Diana Y Qiu,Bruno Schuler

DOI: https://doi.org/10.1021/acsnano.3c04841

IF: 17.1

2023-12-12

ACS Nano

Abstract:Charged dopants in 2D transition metal dichalcogenides (TMDs) have been associated with the formation of hydrogenic bound states, defect-bound trions, and gate-controlled magnetism. Charge-transfer at the TMD-substrate interface and the proximity to other charged defects can be used to regulate the occupation of the dopant's energy levels. In this study, we examine vanadium-doped WSe2 monolayers on quasi-freestanding epitaxial graphene, by high-resolution scanning probe microscopy and ab initio calculations. Vanadium atoms substitute W atoms and adopt a negative charge state through charge donation from the graphene substrate. VW-1 dopants exhibit a series of occupied p-type defect states, accompanied by an intriguing electronic fine-structure that we attribute to hydrogenic states bound to the charged impurity. We systematically studied the hybridization in V dimers with different separations. For large dimer separations, the 2e- charge state prevails, and the magnetic moment is quenched. However, the Coulomb blockade in the nearest-neighbor dimer configuration stabilizes a 1e- charge state. The nearest-neighbor V-dimer exhibits an open-shell character for the frontier defect orbital, giving rise to a paramagnetic ground state. Our findings provide microscopic insights into the charge stabilization and many-body effects of single dopants and dopant pairs in a TMD host material.
Temperature-Dependent Spin Dynamics in WSe2/Pt/CoFe Trilayers

Ziyang Li,Yu Zhang,Yiwen Song,Siwei Zhang,Jingying Zhang,Qingyuan Jin,Zongzhi Zhang

DOI: https://doi.org/10.1109/tmag.2023.3286476

IF: 1.848

2023-01-01

IEEE Transactions on Magnetics

Abstract:In this work, magnetic anisotropy, magnetic damping factor ( $\alpha _{\text {s}}$ ), and effective spin-mixing conductance ( $g^{\uparrow \downarrow }_{\text {eff}}$ ) were studied at different temperatures ( $T$ ) for WSe2/Pt/CoFe heterostructure with various WSe2 monolayer numbers ( $n_{\mathrm {ML}}$ ). We observed that the insertion of the WSe2 underlayer could weaken the perpendicular uniaxial magnetic anisotropy due to increased interfacial roughness and decreased orbital hybridization. A similar enhancement of $\alpha _{\text {s}}$ is obtained for $n_{\mathrm {ML}}$ = 1–5 at room temperature (RT), which mainly arises from the contributions of interfacial two-magnon scattering (TMS) and extra spin current absorption by the WSe2 layer. As $T$ drops below 150 K, both $\alpha _{\text {s}}$ and $g^{\uparrow \downarrow }_{\text {eff}}$ decrease significantly, gradually close to the value of the Pt/CoFe bilayer. In addition, it is found that the sample of $n_{\mathrm {ML}}$ = 1 exhibits larger magnetic coercivity and shorter relaxation time than other samples, which can be attributed to the poor quality of 1 ML WSe2 and the increased magnetic inhomogeneities at the Pt/CoFe interface. Our work elucidates the significant implications of 2D materials on the magnetic properties, which will be valuable for the development of transition-metal dichalcogenide (TMD)-based spintronic devices.
Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Justin Boddison-Chouinard,Marek Korkusinski,Alex Bogan,Pedro Barrios,Philip Waldron,Kenji Watanabe,Takashi Taniguchi,Jarosław Pawłowski,Daniel Miravet,Pawel Hawrylak,Adina Luican-Mayer,Louis Gaudreau

2024-10-15

Abstract:Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within these materials lead to the spin-valley locking effect, in which carriers occupying the K and K' valleys of the reciprocal space must have opposite spin depending on which valley they reside. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of tungsten diselenide to 1D via electrostatic confinement, we demonstrate that spin-valley locking in combination with strong hole-hole interactions lead to a ferromagnetic state in which hole transport through the 1D system is spin-valley polarized, even without an applied magnetic field, and that the persistence of this spin-valley polarized configuration can be tuned by a global back-gate. This observation opens the possibility of implementing a robust and stable valley polarized system, essential for valleytronic applications.

Mesoscale and Nanoscale Physics
Spin- and Valley-Resolved Tunneling Magnetoresistance in a Ferromagnetic Transition Metal Dichalcogenide Planar Heterojunction Modulated by Polarized Light

Laipeng Luo,Shengxiang Wang,Jun Zheng,Yong Guo

DOI: https://doi.org/10.1103/physrevb.108.075434

IF: 3.7

2023-01-01

Physical Review B

Abstract:We propose a ferromagnetic planar heterojunction MoSe2/WSe2/MoSe2, and theoretically explore the quantum transport modulated by off-resonant circular polarized light. We find that fully spin- and valley-polarized transport can be realized in both P (parallel) and AP (antiparallel) magnetization configurations. Specifically, the spin polarization can be reversed by switching the helicity of circular polarized light, while the valley polarization can be significantly modulated by changing magnetization configurations, and it's easier to reverse the valley polarization in the antiparallel configuration than that in the parallel configuration. Moreover, we demonstrate that the tunneling magnetoresistance (TMR) in the planar heterojunction can be modulated due to the spin-valley-dependent effective potential induced by optical modulation and band offset. Especially, the negative TMR is realized in strongly asymmetric magnetization configuration, which is contributed by specific spin- and valley-polarized states, and the sign of TMR can be switched by adjusting optical modulation intensity. This work may shed light on promising applications of spin-valley or TMR devices based on monolayer transition-metal dichalcogenide (TMDC) planar heterojunctions.
Emergent Topological Hall Effect in Fe-doped Monolayer WSe2

Mengqi Fang,Siwei Chen,Chunli Tang,Zitao Tang,Min-Yeong Choi,Jae Hyuck Jang,Hee-Suk Chung,Maya Narayanan Nair,Wencan Jin,Eui-Hyeok Yang

2024-10-06

Abstract:The topological Hall effect (THE) has attracted great attention since it provides an important probe of the interaction between electron and topological spin textures. THE has been considered an experimental signature of the topological spin texture of skyrmions. While THE has been widely reported in chiral magnets, oxide heterostructures, and hybrid systems such as ferromagnet/heavy metal and ferromagnet/topological insulators, the study of monolayer structures is lacking, hindering the understanding of noncollinear spin textures at the atomically thin scale. Here, we show a discernible THE via proximity coupling of Fe-doped monolayer WSe2 (Fe:WSe2) synthesized using chemical vapor deposition on a Pt Hall bar. Multiple characterization methods were employed to demonstrate that Fe atoms substitutionally replace W atoms, making a two-dimensional (2D) van der Waals (vdW) dilute magnetic semiconductor (DMS) at room temperature. Distinct from the intrinsic anomalous Hall effect, we found the transverse Hall resistivity of Fe:WSe2 displaying two additional dip/peak features in the temperature-dependent measurements, consistent with the contribution of THE. The topological Hall effect is attributed to the magnetic skyrmions that emerge from the Dzyaloshinskii-Moriya interactions at the Fe:WSe2 and Pt interface. Our work shows that a DMS synthesized from 2D vdW transition metal dichalcogenides is promising for realizing magnetic skyrmions and spintronic applications.

Atomic Physics
Valley-spin polarized Landau levels in a monolayer semiconductor

Zefang Wang,Jie Shan,kin Fai Mak

DOI: https://doi.org/10.1038/nnano.2016.213

2017-02-19

Abstract:Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal laboratory for exploring both new physical phenomena and electronics and photonics applications. Valley- and spin-dependent optical and electrical properties, originated from Berry curvature effects, have been recently demonstrated. Such Berry curvature effects, together with strong spin-orbit interactions, can further generate unconventional Landau levels (LLs) under a perpendicular magnetic field that support valley- and spinpolarized chiral edge states in the quantum Hall regime. The unique LL structure, however, has not been demonstrated in TMDs. Here we report the observation of fully valley- and spin-polarized LLs in high-quality WSe2 monolayers achieved using a van der Waals heterostructure device platform. Handedness-resolved optical reflection spectroscopy has been applied to probe the inter-LL transitions at individual valleys. The LL structure has been constructed. A doping-induced mass renormalization driven by the strong Coulomb interactions has also been observed. Our results open the door for studies of the unconventional LL physics and quantum Hall effect in monolayer TMDs.

Mesoscale and Nanoscale Physics
Polymorphic Kondo Effects Driven by Spin Lattice Coupling in VTe2

Dongyeun Won,Do Hoon Kiem,Woohyun Cho,Sang‐Hyeok Yang,Young‐Hoon Kim,Young‐Min Kim,Suyeon Cho,Myung Joon Han,Heejun Yang

DOI: https://doi.org/10.1002/adfm.202313180

IF: 19

2024-02-07

Advanced Functional Materials

Abstract:A local and robust phase manipulation of the normal (1T) and charge density wave (CDW, 1T') states of VTe2 is reported by laser irradiation and polymorphic Kondo effects are demonstrated with the two phases at low temperatures. Controlling the spin‐lattice coupling and Kondo physics via laser‐driven CDW phase patterning allows the design of correlated electronic and magnetic properties in materials. Polymorphism in transition metal dichalcogenides (TMDs) allows unique physical properties to be controlled, such as artificial heavy fermion phenomena, the quantum spin Hall effect, and optimized device operations with 2D materials. Besides lattice structural and metal‐semiconductor polymorphs, intriguing charge density wave (CDW) states with different electronic and magnetic phases are demonstrated in TMDs. Typically, the "normal" state is stabilized at high temperature above the CDW energy scale, and therefore, is not relevant to many low‐temperature quantum phenomena, such as magnetic ordering and the heavy fermion Kondo state. Here, a local and robust phase manipulation of the normal (1T) and CDW (1T') states of VTe2 is reported by laser irradiation, and polymorphic Kondo effects are demonstrated with the two phases at low temperatures. The theoretical calculations show that Kondo screening of vanadium 3d electron moments is markedly enhanced in 1T'‐VTe2, which is responsible for the observed transport properties distinct from its 1T counterpart. Controlling the spin‐lattice coupling and Kondo physics via laser‐driven CDW phase patterning allows the design of correlated electronic and magnetic properties in TMDs.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Strong magneto-optical responses of an ensemble of defect-bound excitons in aged WS$_{2}$ and WSe$_{2}$ monolayers

Frederico B. Sousa,Alessandra Ames,Mingzu Liu,Pedro L. Gastelois,Vinícius A. Oliveira,Da Zhou,Matheus J. S. Matos,Helio Chacham,Mauricio Terrones,Marcio D. Teodoro,Leandro M. Malard

2024-04-05

Abstract:Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is possible to break the energy degeneracy between their K and $-$K valleys. Thus, this analogous valley Zeeman effect opens the possibility of controlling and distinguishing the spin and valley of charge carriers in TMDs by their optical transition energies, making these materials promising for the next generation of spintronic and photonic devices. However, the free excitons of pristine TMD monolayer samples present a moderate valley Zeeman splitting, which is measured by their g-factor values that are approximately $-4$. Therefore, for application purposes it is mandatory alternative excitonic states with higher magnetic responses. Here we investigate the valley Zeeman effect in aged WS$_{2}$ and WSe$_{2}$ grown monolayers by magneto-photoluminescence measurements at cryogenic temperatures. These samples present a lower energy defect-bound exciton emission related to defects adsorbed during the aging process. While the free excitons of these samples exhibit g-factors between $-3$ and $-4$, their defect-bound excitons present giant effective g-factor values of $-(25.0 \pm 0.2)$ and $-(19.1 \pm 0.2)$ for WS$_{2}$ and WSe$_{2}$ aged monolayers, respectively. In addition, we observe a significant spin polarization of charge carriers in the defective mid gap states induced by the external magnetic fields. We explain this spin polarized population in terms of a spin-flip transition mechanism, which is also responsible for the magnetic dependent light emission of the defect-bound exciton states. Our work sheds light in the potential of aged TMDs as candidates for spintronic based devices.

Mesoscale and Nanoscale Physics,Materials Science
Zeeman-type Spin Splitting Controlled by an Electric Field

Hongtao Yuan,Mohammad Saeed Bahramy,Kazuhiro Morimoto,Sanfeng Wu,Kentaro Nomura,Bohm-Jung Yang,Hidekazu Shimotani,Ryuji Suzuki,Minglin Toh,Christian Kloc,Xiaodong Xu,Ryotaro Arita,Naoto Nagaosa,Yoshihiro Iwasa

DOI: https://doi.org/10.1038/nphys2691

IF: 19.684

2013-01-01

Nature Physics

Abstract:Transition-metal dichalcogenides such as WSe 2 and MoS 2 have electronic band structures that are ideal for hosting many exotic spin–orbit phenomena. Here we investigate the possibility to generate and modulate a giant Zeeman-type spin polarization in WSe 2 under an external electric field. By tuning the perpendicular electric field applied to the WSe 2 channel with an electric-double-layer transistor, we observe a systematic crossover from weak localization to weak anti-localization in magnetotransport. Our optical reflection measurements also reveal an electrically tunable exciton splitting. Using first-principles calculations, we propose that these are probably due to the emergence of a merely out-of-plane and momentum-independent spin splitting at and in the vicinity of the vertices of the WSe 2 Brillouin zone under electric field. The non-magnetic approach for creating such an intriguing spin splitting keeps the system time-reversally invariant, thereby suggesting a new method for manipulating the spin degrees of freedom of electrons.
Monolayer Vanadium‐Doped Tungsten Disulfide: A Room‐Temperature Dilute Magnetic Semiconductor

Fu Zhang,Boyang Zheng,Amritanand Sebastian,David H. Olson,Mingzu Liu,Kazunori Fujisawa,Yen Thi Hai Pham,Valery Ortiz Jimenez,Vijaysankar Kalappattil,Leixin Miao,Tianyi Zhang,Rahul Pendurthi,Yu Lei,Ana Laura Elías,Yuanxi Wang,Nasim Alem,Patrick E. Hopkins,Saptarshi Das,Vincent H. Crespi,Manh‐Huong Phan,Mauricio Terrones

DOI: https://doi.org/10.1002/advs.202001174

IF: 15.1

2020-11-09

Advanced Science

Abstract:<p>Dilute magnetic semiconductors (DMS), achieved through substitutional doping of spin‐polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto–electric or magneto–optical devices, especially for two‐dimensional (2D) systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room‐temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here, room‐temperature ferromagnetic order obtained in semiconducting vanadium‐doped tungsten disulfide monolayers produced by a reliable single‐step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation, is described. These monolayers develop p‐type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of ~2 at% and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium–vanadium spacings, as supported by transmission electron microscopy, magnetometry, and first‐principles calculations. Room‐temperature 2D‐DMS provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures into the realm of practical application.</p>

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Modulating spin-valley relaxation in WSe$_2$ with variable thickness VOPc layers

Daphné Lubert-Perquel,Byeong Wook Cho,Alan J. Philips,Young Hee Lee,Jeffrey L. Blackburn,Justin C. Johnson

2024-08-10

Abstract:Combining the synthetic tunability of molecular compounds with the optical selection rules of transition metal dichalcogenides (TMDC) that derive from spin-valley coupling could provide interesting opportunities for the readout of quantum information. However, little is known about the electronic and spin interactions at such interfaces and the influence on spin-valley relaxation. In this work, vanadyl phthalocyanine (VOPc) molecular layers are thermally evaporated on WSe$_2$ to explore the effect of molecular layer thickness on excited-state spin-valley polarization. The thinnest molecular layer supports an interfacial state which destroys the spin-valley polarization almost instantaneously, whereas a thicker molecular layer results in longer-lived spin-valley polarization than the WSe$_2$ monolayer alone. The mechanism appears to involve a tightly-bound species at the molecule/TMDC interface that strengthens exchange interactions and is largely avoided in thicker VOPc layers that isolate electrons from WSe$_2$ holes.

Mesoscale and Nanoscale Physics
Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2

Roman Bertoni,Christopher W. Nicholson,Lutz Waldecker,Hannes Hübener,Claude Monney,Umberto De Giovannini,Michele Puppin,Moritz Hoesch,Emma Springate,Richard T. Chapman,Cephise Cacho,Martin Wolf,Angel Rubio,Ralph Ernstorfer

DOI: https://doi.org/10.48550/arXiv.1606.03218

2016-06-10

Mesoscale and Nanoscale Physics

Abstract:Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum technologies, for which atomically thin transition metal dichalcogenides (TMDCs) have been established as promising candidates. In monolayer TMDCs, the lack of inversion symmetry gives rise to a spin-valley correlation of the band structure allowing for valley-selective electronic excitation with circularly polarized light. Here we show that, even in centrosymmetric samples of 2H-WSe2, circularly polarized light can generate spin-, valley- and layer-polarized excited states in the conduction band. Employing time- and angle-resolved photoemission spectroscopy (trARPES) with spin-selective excitation, the dynamics of valley and layer pseudospins of the excited carriers are investigated. Complementary time-dependent density functional theory (TDDFT) calculations of the excited state populations reveal a strong circular dichroism of the spin-, valley- and layer-polarizations and a pronounced 2D character of the excited states in the K valleys. We observe scattering of carriers towards the global minimum of the conduction band on a sub-100 femtosecond timescale to states with three-dimensional character facilitating inter-layer charge transfer. Our results establish the optical control of coupled spin-, valley- and layer-polarized states in centrosymmetric materials and suggest the suitability of TMDC multilayer materials for valleytronic and spintronic device concepts.
Spin-Valley Locking Effect in Defect States of Monolayer MoS2

Yaqian Wang,Longjiang Deng,Qilin Wei,Yi Wan,Zhen Liu,Xiao Lu,Yue Li,Lei Bi,Li Zhang,Haipeng Lu,Haiyan Chen,Peiheng Zhou,Linbo Zhang,Yingchun Cheng,Xiaoxu Zhao,Yu Ye,Wei Huang,Stephen John Pennycook,Kian Ping Loh,Bo Peng

DOI: https://doi.org/10.1021/acs.nanolett.0c00138

2020-03-11

Abstract:Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS2; enhanced valley Zeeman splitting with an effective g-factor of -6.2 is observed. Our results reveal that all five d-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.

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