Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Spin-selective magneto-conductivity in WSe$_2$

Anomalous Landau level gaps near magnetic transitions in monolayer WSe$_2$

Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Spin Filtering Effect in All-Van Der Waals Heterostructures with WSe2 Barriers

Zeeman-type Spin Splitting Controlled by an Electric Field

Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Electric control of spin in monolayer WSe2 field effect transistors

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Spin manipulation by giant valley-Zeeman spin-orbit field in atom-thick WSe2

Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Unconventional charge-spin conversion in Weyl-semimetal WTe2

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

Observation of the out-of-plane polarized spin current from CVD grown WTe2

Manipulation of the Topological Ferromagnetic State in a Weyl Semimetal by Spin-Orbit Torque.

Generation and Electric Control of Spin-Coupled Valley Current in WSe2

Exciton Spin Hall Effect In Arc-Shaped Strained WSe$_2$

Spin-Selective Hole-Exciton Coupling in a V-Doped WSe2 Ferromagnetic Semiconductor at Room Temperature

Magnetization switching driven by spin-orbit torque of Weyl semimetal WTe<sub<2</sub<