Abstract:The sequential deposition (SD) doping strategy is adopted to control the dopant's location and achieve effective n‐doping of non‐fullerene acceptors in the SD films. Combining the advantage of vertical component distribution, the doped SD device exhibits superior charge transport properties with enhanced electron mobility, resulting in increased power conversion efficiency (19.55%). Charge transport in the active layer, which can be effectively modulated by molecular doping of organic semiconductors, significantly affects the photovoltaic performance of organic solar cells (OSCs). However, it is difficult to control the dopant distribution in the bulk heterojunction (BHJ) films, which hinders efficient doping in OSCs. Herein, an effective n‐doping strategy is developed via sequential deposition (SD) of D18 donor and doped acceptor. The favorable vertical component distribution in SD films helps to optimize carrier transport pathways. The SD method confines the n‐dopant N‐DMBI to the acceptor layer, allowing positive effects of molecular doping. Consequently, the doped SD device exhibits superior charge transport with suppressed charge recombination, lower trap density, and enhanced charge extraction compared to the undoped one, resulting in a high power conversion efficiency of 19.55% for D18/L8‐BO binary OSCs. In addition, the doping does not affect the thermal stability of the devices, with the doped SD device retaining over 90% of its initial efficiency after 1200 h of heating at 80 °C. The universality of the SD doping method is also verified in other non‐fullerene acceptor systems. These results demonstrate the great potential of SD doping strategy for building high‐performance OSCs with enhanced charge transport.

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