Scaled InAlN/GaN HEMT on Sapphire With f T /f max of 190/301 GHz
Yawei He,Lian Zhang,Zhe Cheng,Chengcheng Li,Jiaheng He,Shujie Xie,Xuankun Wu,Chang Wu,Yun Zhang
DOI: https://doi.org/10.1109/ted.2023.3269728
IF: 3.1
2023-06-01
IEEE Transactions on Electron Devices
Abstract:In this brief, a scaled In $_{{0}.{17}}$ Al $_{{0}.{83}} ext{N}$ /GaN high-electron-mobility transistor (HEMT) was fabricated on sapphire substrate with 47-nm ${T}$ -gate length, 300-nm source–drain distance, and selective area regrown $ ext{n}^{+}$ -GaN. The device exhibits cutoff frequencies ${f}_{ ext {T}}/{f}_{ ext {max}}$ of 190/301 GHz, which gives a record sqrt ( ${f}_{ ext {T}} imes {f}_{ ext {max}}{)}$ = 239 GHz among reported Ga-polar GaN-on-sapphire HEMTs. The device shows a maximum current density, a peak external direct current transconductance, and an ${I}_{ ext {on}}/{I}_{ ext {off}}$ ratio of 1.45 A/mm, 610 mS/mm, and $2.9 imes 10^{6}$ , respectively. Drain-induced barrier lowering of 75 mV/V is measured at ${I}_{ ext {ds}}$ = 1 mA/mm between ${V}_{ ext {ds}}$ = 1 V and 5 V. The three-terminal OFF-state breakdown voltage is 14.7 V. The effective electron velocity of the 2-D electron gas (2DEG) under the gate foot is estimated to be $1.4 imes 10^{7}$ cm/s. These characteristics of this Ga-polar millimeter wave (mm-wave) GaN-on-sapphire HEMT are comparable with those state-of-the-art counterparts on SiC substrates.
engineering, electrical & electronic,physics, applied