Enhancing the properties of Cd-free MgZnS buffer for solar cells by co-sputtering ZnS and Mg targets

Yaowei Wei,Xiangyu Sun,Xianghuan Meng,Zhenzhen Li,Leng Zhang,Ke Zhou,Zhao Ma
DOI: https://doi.org/10.1016/j.mtcomm.2024.108766
IF: 3.8
2024-03-31
Materials Today Communications
Abstract:The buffer is an essential component that connects the window and absorber layers in thin film solar cells, which has significant impacts on the performance of cell device. CdS is widely used buffer material, but it has drawbacks of toxicity and narrow band gap of 2.4 eV. This work explores the fabrication of a novel Cd-free MgZnS buffer layer through co-sputtering ZnS and Mg targets. The grain size, morphology, phase composition, transmittance and band gap of MgZnS films are manipulated by adjusting the substrate temperature, sputtering power of ZnS target and sputtering current of Mg target. The MgZnS film exhibits remarkable characteristics, including high crystallinity with grain size of about 35 nm, high transmittance of over 80%, and high band gap of 3.44 eV. The process parameters with favorable outcomes include substrate temperature of 300 °C, ZnS sputtering power of 100 W, and Mg sputtering current of 0.05 A. Furthermore, compared with the CdS buffer, the MgZnS buffer has better compactness and transmittance. This method provides a promising new and effective avenue to fabricate Cd-free buffers for solar cells.
materials science, multidisciplinary
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