Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure

Jongseong Han,Jaemin Son,Seungho Ryu,Kyoungah Cho,Sangsig Kim
DOI: https://doi.org/10.1038/s41598-024-57290-w
IF: 4.6
2024-03-19
Scientific Reports
Abstract:In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in p- or n-channel modes depending on the polarity of the gate bias voltage and exhibit steep switching characteristics with an extremely low subthreshold swing of 1.08 mV dec –1 and a high ON/OFF current ratio of approximately 10 7 . Logic circuits consisting of NS FBFETs perform binary and ternary logic operations of the inverters and NAND and NOR gates in each circuit and store their outputs under zero-bias conditions. Therefore, NS FBFETs are promising components for next-generation LIM.
multidisciplinary sciences
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