Abstract:Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumulators of point defects within space charge regions covering cores of dislocations. Space charge regions also may act as local volumes of enhanced non-radiative recombination, deteriorating the photoluminescence efficiency. Surface etching has appeared to be an efficient means to increase the photoluminescence yield from MOCVD GaN materials. This work aimed to improve the scintillation characteristics of MOCVD GaN by a wet etching method. An additional blue photo-luminescence (B-PL) band peaking at 2.7-2.9 eV and related to dislocations was discovered. This B-PL band intensity appeared to be dependent on wet etching exposure. The intensity of the B-PL was considerably enhanced when recorded at rather low temperatures. This finding resembles PL thermal quenching of B-PL centers. The mechanisms of scintillation intensity and spectrum variations were examined by coordinating the complementary photo-ionization and PL spectroscopy techniques. Analysis of dislocation etch pits was additionally performed by scanning techniques, such as confocal and atomic force microscopy. It was proved that this blue luminescence band, which peaked at 2.7-2.9 eV, is related to point defects those decorate dislocation cores. It was shown that the intensity of this blue PL band was increased due to enhancement of light extraction efficiency, dependent on the surface area of either single etch-pit or total etched crystal surface.

Luminescence properties of dislocations in α-Ga2O3

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Dislocation luminescence in GaN single crystals under nanoindentation

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

Dislocation Clustering and Luminescence Nonuniformity in Bulk Gan and Its Homoepitaxial Film

Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth

Cathodoluminescence Study Of Dislocation-Related Luminescence From Small-Angle Grain Boundaries In Multicrystalline Silicon

Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Luminescence Features of Bulk Crystals β-(GaxAl1–x)2O3

Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces

Study on the Dislocations in GaN Films by Wet-Chemical Etching

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Regular Dislocation Networks in Si. Part II: Luminescence

Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Luminescence of Dislocation Network in Directly Bonded Silicon Wafers

Luminescence associated with stacking faults in GaN

Application of multiphoton photoluminescence in characterization of GaN dislocations

Intrinsic origins of broad luminescence in melt-grown single crystals