Abstract:Epitaxial growth of graphene on SiC is a candidate system for the growth of graphene on a scale large enough for technological applications [1]. Growth is achieved by annealing at temperatures above 1200C, causing Si to evaporate from the SiC preferentially to C, with the resulting carbon-rich surface forms a graphitic layer, with the structural and electronic properties extremely sensitive to annealing conditions. Crucially, in this system both the supply of carbon and the conditions under which the graphene films coalesce are temperature dependent and therefore closely coupled [2]. We present data from magnetotransport and low energy electron microscopy (LEEM)measurements for (0001) 4H SiC samples annealed under UHV at various temperatures, showing structural and electronic coherence lengths which are in good agreement. The evolution of coherent electronic transport occurs for samples annealed at higher temperatures as the size of individual graphene domains increases from the tens of nm to micron scale under these conditions (shown in figure 1). Using a lower-temperature anneal followed by an additional higher-temperature treatment, we show that the larger grain size is due to a coalescence mechanism, as opposed to faster propagation of single grains. This suggests a means of partially decoupling the carbon supply from the coalescence process: potentially important for integration with large-scale wafer production. Following lithographic patterning, magnetotransport (MR) data have been taken at various cryogenic temperatures and can be fitted to weak localisation (WL) or weak anti-localisation (WAL) models [3, 4], allowing the various electron scattering rates to be ascertained. Following these fitting procedures, subtraction of the fits from the measured data allows less dominant contributions to magnetotransport to be discerned. For less ordered samples, it is necessary to include an electron-electron interaction term to fit successfully to lowtemperature MR data, while the temperatures at which this becomes necessary agree with a deviation from linear temperature dependence of the scattering rate τφ.

Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC

Probing Electron–electron Interactions in Multilayer Epitaxial Graphene Grown on SiC Using Temperature-Dependent Hall Slope

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

Electronic and thermoelectric properties of atomically thin C<sub>3</sub>Si<sub>3</sub>/C and C<sub>3</sub>Ge<sub>3</sub>/C superlattices.

Temperature Dependent Characteristics of Graphene/silicon Schottky Junction

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC

Low Carrier Density Epitaxial Graphene Devices On SiC

Measurement of the Electronic Thermal Conductance Channels and Heat Capacity of Graphene at Low Temperature

Diffusive Charge Transport in Graphene on SiO2

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Observation of Carrier-Density-dependent Many-Body Effects in Graphene Via Tunneling Spectroscopy.

Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment

Grain coalescence and electronic properties of epitaxial graphene