Water relations and carbohydrate partitioning of four greenhouse-grown olive genotypes under long-term drought

R. Lo Bianco,Alessio Scalisi

DOI: https://doi.org/10.1007/s00468-016-1502-6

2017-04-01

Trees

Abstract:

What problem does this paper attempt to address?

Structure and characteristics of Li-doped NiO thin films prepared by using pulsed-laser deposition process

Hobeom Kwon,Hee Young Lee,Jai-Yeoul Lee

DOI: https://doi.org/10.1166/jnn.2014.7805

Abstract:10 at% Li doped NiO thin films were prepared on glass and sapphire single crystal substrates by using pulsed-laser deposition (PLD) process. The effects of the substrate and the deposition temperature on the crystal structures, electrical, and optical properties of NiO thin films were studied by using XRD, 4 point probe, and UV-VIS spectrometer. The electrical conductivities and the optical properties of NiO thin films depend on the crystallinity of the thin films and substrate temperatures. The Li doped NiO thin film with electrical conductivity of 2.25 S/cm and optical transmittance of 80% was fabricated on the sapphire substrate when processing parameters were optimized.
Effect of Li doping on the structural, linear and nonlinear optical properties of NiO thin films

Abdellatif Laib,Atmane Benhaoua,Mohammed Lakhdar Ayachi,Salah Eddine Laouini,Mohammed Laid Tedjani

DOI: https://doi.org/10.1080/00150193.2022.2113651

2022-10-26

Ferroelectrics

Abstract:Nickel oxide (NiO) is a transparent conductive oxide material that has interesting physical properties, making it one of the most promising materials for a variety of modern technological applications. The interest of this work is to study the structural and optical properties of pure and Li doped NiO thin films deposited using spray pyrolysis on glass substrates. The samples were prepared at 480 °C with various concentrations of Li doping (1, 2, 3, and 5%). X-Ray Diffraction (XRD) was employed to study the structural characteristics including the crystallite size, dislocation density, and lattice strain. Meanwhile, UV visible spectroscopy was used to study the optical properties. The results revealed a polycrystalline cubic structure with (200) crystal plan being the preferred orientation for the produced films. On the other hand, (Li: NiO) films have shown a high transmittance ranging between 60 and 80%. Also, the bandgap values (Eg), were found to be significantly affected by the Li doping ratios to take values from 3.38 to 3.66 eV. Furthermore, diverse linear and nonlinear optical properties were examined. It was found that the nonlinear properties values of χ1, χ3, and n2 to were improved when lithium doping is incorporated into the NiO lattice.

materials science, multidisciplinary,physics, condensed matter
Characterizations of Nickel Oxide Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

Z. H. Xiao,X. F. Xia,S. J. Xu,Y. P. Luo,W. Zhong,H. Ou,E. S. Jiang

DOI: https://doi.org/10.2991/icadme-15.2015.160

2015-01-01

Abstract:The NiO thin films were preapred by reactive radio frequency magnetron sputtering method on glass substrates. The influence of sputtering power on the crystal structure, surface morphological, optical and electrical properties was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectrophotometer (UV-VIS) and Hall effect tester, respectively. The as-preapred NiO thin films are polycrystalline with preferred orientation growth along (200) plane and have very high optical transmittances more than 60 %. All samples have a columnar structure with growth perpendicular to the film surface, and are dense, and homogeneous. With the increase of the sputtering power, a growth mode transformation appears from island growth to layer growth. The lowest resistivity of 2.4 Omega.cm could be obtained in our samples. An optimization electrical properties of the films can be achieved by the variation of crystal quality arises from the sputtering power.
Properties of the Highly Textured (200) NiO Thin Film Deposited by RF Magnetron Sputtering

F. H. Wang,P. J. Li,C. C. Diao,C. C. Huang,H. H. Huang,C. F. Yang

DOI: https://doi.org/10.1007/978-3-319-04573-3_19

2014-01-01

Abstract:Nickel oxide (NiO) thin films are a well-known functional p-type material which can be used for many applications such as electrodes, sensors, and electrochromic devices. This work investigated the effect of different deposition power on the crystal structural, electrical, and optical properties of NiO thin films prepared by RF magnetron sputtering at room temperature in a pure argon atmosphere. The structural and optical properties of NiO thin films were examined by using X-ray diffraction and UV–Vis-NIR spectrum, respectively. The thickness and the composition of NiO thin films were analyzed by glow discharge spectrum, and the thickness increased with increasing deposition power. SEM observations showed that the surface particle sizes of NiO thin films increased with increasing deposition power. The crystal structure varied from amorphous phase to (200) orientation as the deposition power increased from 75 to 150 W. The electrical results showed that the 125 W-deposited NiO thin films had the lowest resistivity and the largest mobility and carrier concentration. The absorption edges in the UV region shifted toward lower optical length as deposition power (or thickness) increased. Findings from GDS analysis indicated that the obtained NiO thin films were Ni-rich non-stoichiometric films, which possessed excellent electronic properties.
Electrical and Optical Properties of Li-doped Ni–Si–O Thin Films

Rongjuan Zhao,Yuan-Hua Lin,Xisong Zhou,Ming Li,Ce-Wen Nan

DOI: https://doi.org/10.1063/1.2335602

IF: 2.877

2006-01-01

Journal of Applied Physics

Abstract:The Li-doped Ni–Si–O thin films (LixNi0.90−xSi0.10O, x=0.0–0.05) have been prepared by a sol-gel spin-coating method on silicon and quartz glass substrates. Analysis of phase composition and microstructure indicates that the films consist of cubic NiO phase and amorphous phase as annealed at 700°C for 5min. With the Li-doping concentration increasing, the core-level photoemission spectra show that a loss of the double-peak structure of the Ni 2p3∕2 main line can be observed and current density of the films increases greatly, which should be ascribed to the increase of the hole carriers induced by the Li doping. Ultraviolet-visible absorption spectra indicate that the absorption edge of the films exhibits a redshift due to the related defects.
Preparation and Properties of NiO Films Via Sol-gel Process and Spin-coating

LIU Ai-yuan,ZHANG Xi-wen,HAN Gao-rong

DOI: https://doi.org/10.14136/j.cnki.issn1673-2812.2010.06.025

2010-01-01

Abstract:NiO films have been successfully prepared via sol-gel process and spin-coating methods on ITO/glass substrates.The NiO films present optical transmitance of 83.9% at 550 nm and a direct energy band gap(E_g) of 3.65 eV.X-ray diffractometry(XRD) results show that the NiO films are cubic structure and growth along(111),(200) and(220) planes,the average grain size along the normal of(200) is 6.82 nm.The cyclic voltammetry results reveal that the nickel in the film undergoes more than one cycle of oxidation/reduction process.The maximum anodic/cathodic diffusion coefficients are 13.4×10～(-12) cm～2/s and 2.29×10～(-12) cm～2/s.The transmittance ratio of the film between the coloured and blenched state is 36.5% at 550 nm with a photopic contrast ratio of 1.8.
Electrochromic Properties of Li- Doped NiO Films Prepared by RF Magnetron Sputtering

Jui-Yang Chang,Ying-Chung Chen,Chih-Ming Wang,You-Wei Chen

DOI: https://doi.org/10.3390/coatings10010087

IF: 3.236

2020-01-20

Coatings

Abstract:In this study: various amounts of Li2CO3 powders were mixed into NiO powders to fabricate the Li- added NiO (NiO:Li) targets. The electrochromic films of LiNiO were deposited on ITO glasses at room temperature (R.T.) by RF magnetron sputtering. The thicknesses of electrochromic LiNiO films were kept about 200 nm. The ECD device was constructed with structure of Glass/ITO/ LiNiO /Gel-electrolyte/ITO/Glass. The results indicated that the optimal electrochromic characteristics of Li0.16Ni0.58O thin films could be obtained by 10 wt% Li2CO3 added NiO target. The optimized characteristics of ECDs could be achieved with the intercalation charge (Q) of 11.93 mC/cm2, the optical density (ΔOD) of 0.38, the transmittance change (ΔT) of 44.1%, and the coloring efficiency (η) of 31.8 cm2/C at the wavelength of 550 nm by setting voltage of 3.2V. The results demonstrate that the doping of Li+ ions into NiO films can effectively enhance the characteristics of ECD devices. The reason may due to the increased amount of charge stored in the electrochromic devices (ECDs).

materials science, multidisciplinary,physics, applied, coatings & films
Annealing environment dependent electrical and chemical state correlation of Li-doped NiO

Seojin Yang,Jiwoong Kim,Yesul Choi,Hyegyeong Kim,Dooyong Lee,Jong-Seong Bae,Sungkyun Park

DOI: https://doi.org/10.1016/j.jallcom.2019.152343

IF: 6.2

2020-01-01

Journal of Alloys and Compounds

Abstract:The effects of annealing environments and dopants on the structural, chemical, optical, and electrical properties of NiO are investigated. Pristine NiO exhibits electrically insulating behavior regardless of the annealing environments (e.g., vacuum and O2 environments). On the other hand, Li-doped NiO exhibits electrical resistivities of ∼350 Ω cm and ∼9 Ω cm for the ceramics annealed under vacuum and O2, respectively with reduced optical band-gap. The structural analysis revealed that all the samples exhibit a cubic structure (Fm-3m, SG 225) without any measurable secondary phases. However, Li-doped NiO samples showed a reduction in the unit cell volume as compared to the undoped NiO samples. X-ray photoelectron spectroscopy revealed different residual Li content depending on the annealing environments, and the presence of induced Ni3+ state in the Li-doped NiO. These induced Ni3+ states and doped Li are responsible for the observed change in the structural and electrical properties of the Li-doped NiO samples.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Transparent Conductive P-Type Lithium-Doped Nickel Oxide Thin Films Deposited by Pulsed Plasma Deposition

Yanwei Huang,Qun Zhang,Junhua Xi,Zhenguo Ji

DOI: https://doi.org/10.1016/j.apsusc.2012.04.057

IF: 6.7

2012-01-01

Applied Surface Science

Abstract:Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics. (C) 2012 Elsevier B.V. All rights reserved.
Novel gain-of-function alleles demonstrate a role for the heterochronic gene lin-41 in C. elegans male tail tip morphogenesis.

Tania Del Rio‐Albrechtsen,K. Kiontke,Shu-Yi Chiou,D. Fitch

DOI: https://doi.org/10.1016/J.YDBIO.2006.04.472

IF: 3.148

2006-09-01

Developmental Biology

Abstract:
Tunable Electrical Properties of NiO Thin Films and P-Type Thin-Film Transistors

Yongyue Chen,Yajie Sun,Xusheng Dai,Bingpo Zhang,Zhenyu Ye,Miao Wang,Huizhen Wu

DOI: https://doi.org/10.1016/j.tsf.2015.09.025

IF: 2.1

2015-01-01

Thin Solid Films

Abstract:Oxide p-type transistors are expected in realization of complementary circuits. Here, amorphous p-type NiO thin films were deposited on glass substrates by radio frequency (rf) sputtering at various growth temperatures and O2/Ar flow ratios. The influence of growth temperature and O2/Ar flow ratio on the structural and electrical properties of amorphous NiO thin films has been systematically investigated by means of characterizations from X-ray diffraction, UV–vis spectroscopy, and electrical measurements. Pure Ar ambient with room temperature (RT) growth of NiO films shows the highest mobility of 1.07cm2/Vs, and hole concentration of 2.78×1017cm−3. Initial p-type NiO-based thin film transistors grown by magnetron sputtering demonstrated a mobility of 0.05cm2/Vs, a threshold voltage (Vth) of −8.6V, subthreshold swing (S) of 2.6V/dec, the current on–off ratio of 103, respectively.
Electrical and Magnetic Properties of ZnNiO Thin Films Deposited by Pulse Laser Deposition

Jie Jiang,Xue-tao Wang,Li-ping Zhu,Li-qiang Zhang,Zhi-guo Yang,Zhi-zhen Ye

DOI: https://doi.org/10.1631/jzus.a1000525

2011-01-01

Abstract:ZnNiO thin films with different contents of Ni (0–10 at.%) were fabricated on quartz and Si (100) substrates by pulsed laser deposition (PLD). We measured the samples by X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrometer (UV-VIS), and Hall testing. When the Ni contents were below 3 at.%, partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases, which enhanced the conductivity of the film. When the Ni contents were above 3 at.%, Ni ions were at the interstitial sites, and Ni-related clusters and defects were able to emerge in the films, resulting in a worsening of electrical and optical properties. A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.
Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

Kuo-Chuang Chiu,Yi-Wen Kao,Jau-Ho Jean

DOI: https://doi.org/10.1111/j.1551-2916.2010.03636.x

IF: 4.186

2010-01-01

Journal of the American Ceramic Society

Abstract:The p‐type Li‐doped ZnO films are successfully deposited on a glass substrate by RF magnetron sputtering at room temperature. The pure, crystalline sputtering target of LiXZn1−XO1−X/2 with X in the range of 0–0.003 is fabricated using the powder synthesized by the thermal decomposition of a metal–nitrate–tartrate gel complex at 400°–800°C. The complex is prepared by dissolving nitrates of zinc and lithium in an aqueous solution with nitric and tartaric acids. The resulting compacts, which can be densified at 1400°C, exhibit a decreasing trend of electrical resistivity with increasing Li content. For the composition with 0.2 mol% Li, the p‐type Li‐doped ZnO film has an electrical resistivity of 1.3 Ω·cm, Hall mobility of 0.77 cm2·(V·s)−1, carrier concentration of 6.67 × 1018 cm−3, and high optical transmittance in the visible region.
Dopant Concentration Influence on the Optical Properties of NiO Thin Films Doped by Al and Nb Deposited by DC and RF Magnetron Sputtering

Dalal Bayahia,Waleed Shirbeeny

DOI: https://doi.org/10.1002/sia.7134

2022-07-02

Surface and Interface Analysis

Abstract:Optical characteristics of nickel oxide (NiO) can be fine‐tuned to match specific application prerequisites. Doping NiO with Al or Nb influences the structure of its thin films, as they have d‐orbital ionic radii of 142.2 pm and 181.9 pm, far from the ionic radius of Ni2+ of 33.8 pm. Al ‐and Nb‐doped NiO thin films were deposited on silicon and quartz substrates using RF and DC reactive magnetron sputtering. The deposition powers on the dopant targets varied between 30 W and 60 W in steps of 10 W. The XRD analysis revealed no phase changes in the NiO structure. However, a shift toward a smaller angle was observed. The bandgap decreased to 3.30 eV. The metal‐doped NiO grains retained an average size of a few nanometers. The minimum resistivity of the Al‐doped NiO reached 0.0130 Ω.m, while it decreased to 0.0058 Ω.m for the Nb‐doped NiO. Using ellipsometry and effective medium approximation (EMA), it was possible to determine the refractive indices of the composites and dopants. The amount of dopants determined using this method was consistent with the deposition power. The influence of the dopant percentage on the optical properties of the doped NiO met the expectations. The optical and electrical properties of Al‐ and Nb‐doped NiO make them to be good candidates for electrochromic and optical sensor applications.

chemistry, physical
Electronic and transport properties of Li-doped NiO epitaxial thin films

J. Y. Zhang,W. W. Li,R. L. Z. Hoye,J. L. MacManus-Driscoll,M. Budde,O. Bierwagen,L. Wang,Y. Du,M. J. Wahila,L. F. J. Piper,T.-L. Lee,H. J. Edwards,V. R. Dhanak,K. H. L. Zhang

DOI: https://doi.org/10.1039/c7tc05331b

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.

materials science, multidisciplinary,physics, applied
Fabrication of Li-Doped NiO Thin Films by Ultrasonic Spray Pyrolysis and Its Application in Light-Emitting Diodes

Víctor Hugo López-Lugo,Manuel García-Hipólito,Arturo Rodríguez-Gómez,Juan Carlos Alonso-Huitrón

DOI: https://doi.org/10.3390/nano13010197

IF: 5.3

2023-01-01

Nanomaterials

Abstract:The fabrication of NiO films by different routes is important to extend and improve their applications as hole-transporting layers in organic and inorganic optoelectronic devices. Here, an automated ultrasonic pyrolysis spray method was used to fabricate NiO and Li-doped NiO thin films using nickel acetylacetonate and lithium acetate dihydrate as metal precursor and dimethylformamide as solvent. The effect of the amount of lithium in the precursor solution on the structural, morphological, optical, and electrical properties were studied. XRD results reveal that all the samples are polycrystalline with cubic structure and crystallite sizes in the range of 21 to 25 nm, without any clear trend with the Li doping level. AFM analysis shows that the crystallites form round-shaped aggregates and all the films have low roughness. The optical transmittance of the films reaches values of 60% to 77% with tendency upward as Li content is increased. The electrical study shows that the films are p-type, with the carrier concentration, resistivity, and carrier mobility depending on the lithium doping. NiO:Li (10%) films were successfully incorporated into inorganic light emitting diodes together with Mn-doped ZnS and ZnO:Al films, all deposited on ITO by the same ultrasonic spray pyrolysis technique.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Yu-He Liu,Xiao-Yan Liu,Hui Sun,Bo Dai,Peng Zhang,Yong Wang

DOI: https://doi.org/10.3390/coatings11060697

IF: 3.236

2021-06-10

Coatings

Abstract:Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

materials science, multidisciplinary,physics, applied, coatings & films
Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Parashurama Salunkhe,Muhammed Ali A V,Dhananjaya Kekuda

DOI: https://doi.org/10.1088/2053-1591/ab69c5

IF: 2.025

2020-01-01

Materials Research Express

Abstract:Abstract We report a comprehensive study on influence of oxygen partial pressure on NiO thin films grown on glass substrates in a combined argon and oxygen ambience by reactive dc magnetron sputtering. In this present article, we have discussed the dependence of oxygen pressure on structural, chemical, morphological, optical and electrical properties of the sputtered NiO films. Glancing angle x-ray diffraction reveals that the deposited films were polycrystalline in nature with FCC phase. The preferred orientation changes from (200) to (111) in a higher O 2 flow rate environment and an average particle size was estimated using Scherrer relation. The surface morphology of films was studied by using atomic force microscopy. The x-ray photoelectron spectroscopy analysis demonstrates the core level Ni 2p spectra over a range of 850 eV to 885 eV of binding energy and observed Ni 2p 3/2 , Ni 2p 1/2 domains along with their satellite peaks. It infers the presence of both Ni +2 and Ni +3 oxidation states in the sputtered films. Additionally, Raman spectroscopy was carried out to confirm the structural defects level and crystalline nature of the films. The optical results show that deposited films were semi-transparent and the evaluated optical band gap of the material lies in the range 3.36 eV to 3.52 eV. The extracted electrical properties infer either n-type or p-type conductivity depending on the processing conditions of the films.

materials science, multidisciplinary
Sputtering Power Induced Physical Property Variation of Nickel Oxide Films by Radio Frequency Magnetron Sputtering

Fan Yang,Zhiyuan Wang,Zhiqiang Zhen,Yang Zhao,Hui Wang,Y. Gao,Jingjie Li,Xinzhong Li,Zhennan Feng

DOI: https://doi.org/10.1590/1980-5373-MR-2017-0836

2018-02-01

Abstract:NiO thin films were deposited on Si and Corning 1737 glass substrates using radio frequency (rf) magnetron sputtering system. The physical properties of NiO films under different sputtering power were thoroughly studied. The XRD results indicated that as-prepared NiO films with the sputtering power above 100 W developed only (200) preferred orientation. The AFM results showed that the NiO films were composed of different-size NiO nano-grains and the grain size increased with increasing the sputtering power. The samples marked A-E under the sputtering power of 80, 100, 120, 140 and 160 W have optical band gap values of 3.70, 3.65, 3.50, 3.45 and 3.44 eV, respectively. Comparatively, the controllable electrical properties of the films could be achieved by the variation of crystal quality arises from the sputtering power.

Physics,Materials Science
Preparation and characterization of p- NiO:Li thin films as schottky photodiode

Liqaa S Ali,Aliyah A Shehab,Ahmed N Abd

DOI: https://doi.org/10.1088/1742-6596/1234/1/012050

2019-07-01

Journal of Physics: Conference Series

Abstract:Abstract Nickel oxide was prepared using the chemical method. Li-doped NiO thin films with concentrations (0.04) was deposited on glass substrate using drop casting technique with thickness 150nm, and then the annealing at 300 ° C for 60 sec. The effect of the lithium doping on the structural and optical properties of Li: NiO films were examined. The structure of the prepared films were described by x-ray diffraction (XRD) and Atomic Force Microscopy (AFM). The results of X-ray pattern showed the NiO and Li: NiO films to have a polycrystalline structure of a cubic type and preferred orientation (111). (AFM) data indicated that the structure was nanoscale and surface of the films is highly smooth. The study of optical properties included the transmittance spectrum of the prepared films of the wavelengths of (300-900) nm, It was found that the transmittance of pure nickel oxide is 79% in the visible area after doping by Li The transmittance decreases and the absorption increases. The energy gap was also calculated and found to be decreasing by increasing the doping concentration. Other important optical properties of the absorption coefficient and extinction coefficient were calculated. The electrical properties of the prepared films were studied, It was found that the concentration of the carriers increases with increasing doping concentration and mobility decreases. The thin films were deposited on a substrate of FTO to make of schottky diode. The characteristics of I-V, C-V were studied. A solar cell was found the efficiency of the cell was increased by doping.

Water relations and carbohydrate partitioning of four greenhouse-grown olive genotypes under long-term drought

Structure and characteristics of Li-doped NiO thin films prepared by using pulsed-laser deposition process

Effect of Li doping on the structural, linear and nonlinear optical properties of NiO thin films

Characterizations of Nickel Oxide Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

Properties of the Highly Textured (200) NiO Thin Film Deposited by RF Magnetron Sputtering

Electrical and Optical Properties of Li-doped Ni–Si–O Thin Films

Preparation and Properties of NiO Films Via Sol-gel Process and Spin-coating

Electrochromic Properties of Li- Doped NiO Films Prepared by RF Magnetron Sputtering

Annealing environment dependent electrical and chemical state correlation of Li-doped NiO

Transparent Conductive P-Type Lithium-Doped Nickel Oxide Thin Films Deposited by Pulsed Plasma Deposition

Novel gain-of-function alleles demonstrate a role for the heterochronic gene lin-41 in C. elegans male tail tip morphogenesis.

Tunable Electrical Properties of NiO Thin Films and P-Type Thin-Film Transistors

Electrical and Magnetic Properties of ZnNiO Thin Films Deposited by Pulse Laser Deposition

Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

Dopant Concentration Influence on the Optical Properties of NiO Thin Films Doped by Al and Nb Deposited by DC and RF Magnetron Sputtering

Electronic and transport properties of Li-doped NiO epitaxial thin films

Fabrication of Li-Doped NiO Thin Films by Ultrasonic Spray Pyrolysis and Its Application in Light-Emitting Diodes

Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Sputtering Power Induced Physical Property Variation of Nickel Oxide Films by Radio Frequency Magnetron Sputtering

Preparation and characterization of p- NiO:Li thin films as schottky photodiode