Electronic and transport properties of Li-doped NiO epitaxial thin films

J. Y. Zhang,W. W. Li,R. L. Z. Hoye,J. L. MacManus-Driscoll,M. Budde,O. Bierwagen,L. Wang,Y. Du,M. J. Wahila,L. F. J. Piper,T.-L. Lee,H. J. Edwards,V. R. Dhanak,K. H. L. Zhang
DOI: https://doi.org/10.1039/c7tc05331b
IF: 6.4
2018-01-01
Journal of Materials Chemistry C
Abstract:NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.
materials science, multidisciplinary,physics, applied
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