Effect of Li Content on Microstructure and Dielectric Properties of LixTiyNi1-x-yO Thin Films

Bo-Ping Zhang,Ya-Ru Zhang,Yan Dong,Jing-Feng Li,Can Chen
DOI: https://doi.org/10.1080/00150190701540574
2007-01-01
Ferroelectrics
Abstract:Li and Ti co-doped NiO thin films of 250 nm in thickness were deposited onto Pt/Ti/SiO2/Si(100) substrates using a sol-gel spin-coating method. The effect of Li doping content on microstructure and dielectric properties of the LixTyNi1-x-yO thin films in which the Ti content was fixed at 2 and 20 at% was investigated. All the thin films consisted of a mixture of NiO, NiTiO3, Li2NiO2 and/or LiNiO7 phases and show the high dielectric constant ranged from 235-370 in 100 Hz depending on the proportion of various phases. Excess Li content which results in increasing Li2NiO2 and the formation of LiNiO2 led to decrease the dielectric constant especially for the 2% Ti containing thin films in 100 Hz. The increased NiTiO3 and Li-dissolved Ni(Li)O phases by increasing Ti content from 2 to 20 at% is more beneficial for the formation of the core-shell like microstructure and hence enhancing the dielectric constant. However, the frequency stability of the dielectric constants was lowered by the formation of the excess NiTiO3 phase as Ti content was increased from 2 to 20 at%. The doping content of Li and Ti is necessary to control in an appropriate range in order to obtain the high dielectric property.
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