Orthostatic reactions in the 85- year olds

P. Jäntti

DOI: https://doi.org/10.1007/BF03324083

1992-06-01

Aging

Abstract:

What problem does this paper attempt to address?

Ordered nanowire array blue/near-UV light emitting diodes.

Sheng Xu,Chen Xu,Ying Liu,Youfan Hu,Rusen Yang,Qing Yang,Jae-Hyun Ryou,Hee Jin Kim,Zachary Lochner,Suk Choi,Russell Dupuis,Zhong Lin Wang

DOI: https://doi.org/10.1002/adma.201002134

IF: 29.4

2010-01-01

Advanced Materials

Abstract:Blue/near-UV light-emitting diodes composed of position controlled n-ZnO nanowires arrays and a p-GaN thin film substrate are demonstrated. Under forward bias, each single nanowire is a light emitter. By Gaussian deconvolution of the emission spectrum, the origins of the blue/near-UV emission are assigned specifically to three distinct electron-hole recombination processes. The LEDs give an external quantum efficiency of 2.5%.
Stable white emission and color-tunable electroluminescence achieved from n-ZnO/p-GaN nano-heterojunction decorated with CsPbBr3 and CsPbI3 quantum dots

Cen Zhang,Xiaonan Zhu,Fei Gao,Liu Yang,Weizhen Liu

DOI: https://doi.org/10.1016/j.jlumin.2021.118691

IF: 3.6

2022-04-01

Journal of Luminescence

Abstract:The development of wavelength adjustable electrically driven panchromatic display light-emitting devices (LEDs), a future direction for lighting sources, still seems necessary because of great development prospects and practical significance. Herein, perovskite quantum dots (QDs) of CsPbBr3 and CsPbI3 with multi-color luminescence feature were employed into n-ZnO/p-GaN nano-heterojunction LEDs. A thin polystyrene cover layer was intentionally inserted between CsPbBr3 and CsPbI3 to prevent the undesired halogen anion-exchange reaction. A color-tunable electroluminescence (EL) could be achieved by changing the molar ratio of these two types of perovskite QDs. By further optimizing the molar ratio between CsPbBr3 and CsPbI3, that is, the evolution of the share of red, green and blue-violet luminescence in EL spectra, a stable white light emission was obtained. The current research not only achieves multi-color EL emissions in a three-dimensional nano-architecture, but also proposes an effective and clever strategy for preparing and developing single-chip white LEDs.

optics
One-chip multicolor electroluminescence from an isotype heterojunction light-emitting diode

Zhao Chen,Guojia Fang,Jianbo Wang,Xiaoming Mo,Hao Long,Haoning Wang,Shang Peng,Weiwei Meng,Xingzhong Zhao

DOI: https://doi.org/10.1063/1.4895935

IF: 4

2014-09-15

Applied Physics Letters

Abstract:Both direct current (DC) and alternating current (AC) driving electroluminescence were obtained from isotype heterojunction (n-i-n: n-ZnO/i-HfO2/n-GaN) light-emitting diodes (LEDs) fabricated by a pulsed laser deposition system. The n-ZnO film maintained the same growth orientation as the n-GaN film and was of high crystalline quality even on a polycrystalline high-k HfO2 thin film. The as-produced n-i-n LEDs can emit strong visible light or dominant ultraviolet light at ∼392 nm, depending on the polarity of the applied DC voltages. The individual spectrum under either forward or reverse bias can be integrated to one spectrum by applying 50 Hz AC driving voltages (sinusoidal signals). More importantly, near white-light can be obtained by tuning the symmetric driving AC sinusoidal signals to the asymmetric ones. This simple and facile method only by applying AC asymmetric signals to achieve white light emission on one single chip may provide an easy route for the white-light solid-state lighting industry.

physics, applied
White light-emitting quantum dot diodes and tuning of luminescence processes

Bozhi Liu,Ruifeng Li,Lian Hu,Huizhen Wu

DOI: https://doi.org/10.1007/s00339-014-8465-5

2014-01-01

Applied Physics A

Abstract:A novel white light-emitting diode based on a large Stokes shift (~200 nm) and using pure green light-emitting CdSeS quantum dots (QDs) with an Ag/ZnSnO/QDs/spiro-TPD/ITO structure has been fabricated in which ZnSnO and spiro-TPD are served as the electron and hole transport layer, respectively. The large Stokes shift of the CdSeS QDs excludes potentially Förster resonance energy transfer process, which allows spiro-TPD to act as both an emitter and hole transport layer. The devices exhibit a wide EL spectrum consisting of three components: blue emission from spiro-TPD, green emission from QD band–band recombination, and red emission from QD surface-state recombination. We further found that as the intensity ratios among these three components vary with bias the color of the QD light-emitting diodes is tunable. The device displays a good white light-emitting characteristic with CIE coordinates of (0.281, 0.384) at an appropriate bias.
Full‐Color Electroluminescence from ZnO‐Nanoparticles‐based Homojunction Diodes

Raj Deep,. Toshiyuki Yoshida,Yasuhisa Fujita

DOI: https://doi.org/10.1002/pssr.202400149

2024-06-27

physica status solidi (RRL) - Rapid Research Letters

Abstract:Wide‐bandgap zinc oxide (ZnO)‐based light‐emitting diodes (LEDs) have attracted considerable interest for application in solid‐state lighting; however, the absence of dependable high‐quality homojunctions has impeded their progress. A p‐n homojunction LED is fabricated in this study using arc discharge‐fabricated N‐doped ZnO nanoparticles (NPs) spin‐coated over a Ga‐doped ZnO thin film. The homojunction LEDs demonstrate pure ultraviolet (UV) emissions with a narrow linewidth even at elevated temperatures. The UV intensity initially increases as the injection current increases to the saturation limit with a change in the peak position, followed by a decrease at higher injection currents. A proportion of UV light is down‐converted into visible light using phosphors. Furthermore, the mixing of phosphors and their application to a UV‐LED results in white emission with high color rendering and superior optical stability. Notably, the visible spectral peaks do not discernibly change with variations in the operating current. These findings represent significant advancements in the development of stable p‐type ZnO nanostructures, leading to the development of cost‐effective photonic devices. This article is protected by copyright. All rights reserved.

physics, condensed matter, applied,materials science, multidisciplinary
Light‐Emitting Devices: Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires (small 19/2017)

Mingming Jiang,Gaohang He,Hongyu Chen,Zhenzhong Zhang,Lingxia Zheng,Chongxin Shan,Dezhen Shen,Xiaosheng Fang

DOI: https://doi.org/10.1002/smll.201770105

IF: 13.3

2017-01-01

Small

Abstract:Color-tunable light-emitting devices are achieved from biased individual Ga-doped ZnO microwires in article number 1604034, by Chongxin Shan, Dezhen Shen, and Xiaosheng Fang, and co-workers. It is confirmed that tunable n-type conduction in Ga-doped ZnO microwires is dominated by Ga impurities. These multicolor emitters can be used to rival and complement other conventional semiconductor devices in electronic and photoelectronic devices.
Wavelength-Tunable Green Light Sources Based on ZnO:Ga Nanowire/p-InGaN Heterojunctions

Maosheng Liu,Mingming Jiang,Yang Liu,Kai Tang,Da Ning Shi,Caixia Kan

DOI: https://doi.org/10.1021/acsanm.1c02650

IF: 6.14

2021-10-01

ACS Applied Nano Materials

Abstract:InGaN-based materials and structures have attracted extensive attention in developing green light-emitting diodes (LEDs), but the fabrication of high-performance low-dimensional green LEDs is seriously limited to the sample preparation, device construction, green gap, and efficiency droop. In this work, a kind of green LED composed of p-type InGaN layers and a one-dimensional wired ZnO via Ga incorporation, featuring a green wavelength of 520.0 nm and a linewidth of about 34.0 nm, was designed. The LED characteristics, with respect to the peak wavelengths and linewidths, are almost constant at different input currents, indicating the insensibility to the quantum-confined Stark effect commonly observed in InGaN-based light sources. The color coordinate is really close to pure green (0.170, 0.797) of the Rec. 2020 standard. Significantly, the efficiency droop in the fabricated LED is temperate, suggesting that the recombination of carriers can occur toward the n-ZnO:Ga/p-InGaN interface instead of the p-InGaN region. With an increase in Ga-doping concentration in ZnO:Ga wires, the main EL peaks show a significant red shift from 520 to 584 nm in the green and yellow emission spectrum. This wavelength-tuning is further confirmed by the successfully varied color coordinates. The fabrication of one-dimensional wired green LEDs not only can break through the green gap but also can work as a potential candidate to developing solid-state lighting in the visible band for a wide range of practical applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsanm.1c02650.Device preparation process of the n-ZnO:Ga MW/p-InGaN heterojunction green light sources; LED characterization of the as-constructed emission devices, with the wire having different sizes and surface morphologies; EL spectra of the as-constructed LEDs and their corresponding relative EQE in which the wires were selected from different samples (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Facile approaches to prepare n-ZnO/(i-ZnO)/p-GaN heterojunction light-emitting diodes with white-light-electroluminescence

Chunqing Huo,Youming Lu,Hua Zeng,Peijiang Cao,Shun Han,Wenjun Liu,Fang Jia,Yuxiang Zeng,Xinke Liu,Wangying Xu,Deliang Zhu

DOI: https://doi.org/10.7567/1882-0786/ab50de

IF: 2.819

2019-11-06

Applied Physics Express

Abstract:White-light-emitting diode (LED) with effective energy conservation and long service life could beemployed in numerous applications. In this study, the high-performance n-ZnO films were firstprepared via pulsed laser deposition on p-GaN substrates and then the n-ZnO/p-GaN heterojunction LEDwas fabricated. This LED exhibits blue and yellow light emission, and their emission intensities canbe tuned by adjustment of the fabrication parameters (e.g. oxygen pressure) and/or by introductionof a semi-insulating i-ZnO layer to form a p-GaN/i-ZnO/n-ZnO heterojunction. Thus, a facile approachhas been proposed for the preparation of white LED.

physics, applied
High-Color-Rendition White QLEDs by Balancing Red, Green and Blue Centres in Eco-Friendly ZnCuGaS:In@ZnS Quantum Dots

Jiangyuan Jiang,Shuai Zhang,Qingsong Shan,Linxiang Yang,Jing Ren,Yongjin Wang,Seokwoo Jeon,Hengyang Xiang,Haibo Zeng

DOI: https://doi.org/10.1002/adma.202304772

Abstract:White light-emitting diodes (WLEDs) are the key components in the next-generation lighting and display devices. The inherent toxicity of Cd/Pb-based quantum dots (QDs) limits the further application in WLEDs. Recently, more attention is focused on eco-friendly QDs and their WLEDs, especially the phosphor-free WLEDs based on mono-component, which profits from bias-insensitive color stability. However, the imbalanced carrier distribution between red-green-blue luminescent centers, even the absence of a certain luminescent center, hinders their balanced and stable photoluminescence/electroluminescence (PL/EL). Here, an In3+-doped strategy in Zn-Cu-Ga-S@ZnS QDs is first proposed, and the balanced carrier distribution is realized by non-equivalent substitution and In3+ doping concentration modulation. The alleviation of the green emitter by the In3+-related red emitter and the compensation of blue emitter by the Zn-related electronic states contribute to the balanced red-green-blue emitting with high PL quantum yield (PLQY) of 95.3% and long lifetime (T90) of over 1100 h in atmospheric conditions. Thus, the In3+-doped WLEDs can achieve exceedingly slight proportional variations between red-green-blue EL intensity over time (∆CIE = (0.007, 0.009)), and high champion CRI of 94.9. This study proposes a single-component QD with balanced and stable red-green-blue PL/EL spectrum, meeting the requirements of lighting and display.
AgNWs/AZO composite electrode for transparent inverted ZnCdSeS/ZnS quantum dot light-emitting diodes

Xiaohong Jiang,Zhiyao Song,Guo Liu,Yuting Ma,Aqiang Wang,Yimeng Guo,Zuliang Du

DOI: https://doi.org/10.1088/1361-6528/ab4dcd

IF: 3.5

2019-10-31

Nanotechnology

Abstract:Fully transparent inverted quantum dot light-emitting diodes (QLEDs) were fabricated by incorporating a Ag-nanowire-based anode. Aluminum-doped zinc oxide (ZnO:Al, AZO) was inserted by atomic layer deposition and reduced the sheet resistance by promoting adhesion of Ag nanowires (AgNWs) film and increasing its chemical stability towards oxygen. The performance of the QLEDs was optimal when the thickness of AZO was 20 nm. The current efficiency of the fully transparent inverted QLED integrated with the AgNWs/AZO anode reached 15.33 cd/A, which is an order-of-magnitude increase over the best performance reported to date. The main peak wavelength and optical transmittance of the inverted QLEDs were 530 nm and 75.66%, respectively. This discovery is expected to provide a basic method for the production of flexible displays with full transparency by AgNWs-based electrodes.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

Sung-Wen Huang Chen,Yu-Ming Huang,Konthoujam James Singh,Yu-Chien Hsu,Fang-Jyun Liou,Jie Song,Joowon Choi,Po-Tsung Lee,Chien-Chung Lin,Zhong Chen,Jung Han,Tingzhu Wu,Hao-Chung Kuo,JIE Song,Hao-chung Kuo

DOI: https://doi.org/10.1364/PRJ.388958

IF: 7.6

2020-04-16

Photonics Research

Abstract:Red-green-blue (RGB) full-color micro light-emitting diodes (μ-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN μ-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar μ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under 200 A/cm2 injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar μ-LEDs' emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020). © 2020 Chinese Laser Press

optics
Efficient and bright white light-emitting diodes based on single-layer heterophase halide perovskites

Jiawei Chen,Jian Wang,Xiaobao Xu,Jinhang Li,Jizhong Song,Si Lan,Sinan Liu,Bo Cai,Boning Han,Jake T. Precht,David Ginger,Haibo Zeng

DOI: https://doi.org/10.1038/s41566-020-00743-1

IF: 35

2020-12-21

Nature Photonics

Abstract:At present, electric lighting accounts for ~15% of global power consumption and thus the adoption of efficient, low-cost lighting technologies is important. Halide perovskites have been shown to be good emitters of pure red, green and blue light, but an efficient source of broadband white electroluminescence suitable for lighting applications is desirable. Here, we report a white light-emitting diode (LED) strategy based on solution-processed heterophase halide perovskites that, unlike GaN white LEDs, feature only one broadband emissive layer and no phosphor. Our LEDs operate with a peak luminance of 12,200 cd m−2 at a bias of 6.6 V and a maximum external quantum efficiency of 6.5% at a current density of 8.3 mA cm−2. Systematic in situ and ex situ characterizations reveal that the mechanism of efficient electroluminescence is charge injection into the α phase of CsPbI3, α to δ charge transfer and α–δ balanced radiative recombination. Future advances in fabrication technology and mechanistic understanding should lead to further improvements in device efficiency and luminance.

optics,physics, applied
Large-Area Tunable Red/Green/Blue Tri-Stacked Quantum Dot Light-Emitting Diode Using Sandwich-Structured Transparent Silver Nanowires Electrodes

Jia Sun,Hongqin Wang,Hengzhou Shi,Siyuan Wang,Jinping Xu,Jinsuo Ma,Bo Ma,Mingyue Wen,Jingqun Li,Jialong Zhao,Huan Liu,Yunjun Wang,Lei Jiang

DOI: https://doi.org/10.1021/acsami.0c15469

2020-10-13

Abstract:Quantum dot light-emitting diodes (QLEDs), particularly those capable of emitting light with tunable colors, have attracted the attention of researchers for their variability in lighting and displays. So far, various color-tunable QLEDs have been developed using techniques of inkjet printing or white light combining with color filters (CFs), which however suffered from difficulties in mass production. Here, by inserting an insulating resin layer between two conductive silver nanowire (AgNW) layers, a unique AgNWs/resin/AgNWs (A/R/A) sandwich-structured electrode was developed, showing rather small sheet resistances at both sides and high transparency. The as-prepared A/R/A electrode is applicable for making a large-area transparent red QLED with an external quantum efficiency (EQE) of 11.42% and a transmittance of 72.5%. Furthermore, the A/R/A electrode can be used as intermediate connecting electrodes to stack three single-colored QLEDs, forming a novel structured R/G/B tri-stacked QLED, which enables emission not only of primary colors red, green, and blue independently with the maximum EQE of 8.22, 8.07, and 2.28%, respectively, but also arbitrary hybrid colors that cover a 107% National Television System Committee (NTSC) color triangle. Such large-area full-color-tunable tri-stacked QLED offers new perspectives for the next-generation solid-state scene lighting and full-color displays.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c15469?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c15469</a>.Experimental details, additional data, and a movie of the periodically driven R/G/B tri-QLED (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c15469/suppl_file/am0c15469_si_001.pdf">PDF</a>)Importantly, such tri-stacked R/G/B QLED enables prompt color-switching by alternating the working electrode (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c15469/suppl_file/am0c15469_si_002.mp4">MP4</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Multicolor Graphene Nanoribbon/Semiconductor Nanowire Heterojunction Light-Emitting Diodes

Yu Ye,Lin Gan,Lun Dai,Hu Meng,Feng Wei,Yu Dai,Zujin Shi,Bin Yu,Xuefeng Guo,Guogang Qin

DOI: https://doi.org/10.48550/arXiv.1103.1754

2011-03-09

Abstract:We report novel graphene nanoribbon (GNR)/semiconductor nanowire (SNW) heterojunction light-emitting diodes (LEDs) for the first time. The GNR and SNW have a face-to-face contact structure, which has the merit of bigger active region. ZnO, CdS, and CdSe NWs were employed in our case. At forward biases, the GNR/SNW heterjunction LEDs could emit light with wavelengths varying from ultraviolet (380 nm) to green (513 nm) to red (705 nm), which were determined by the band-gaps of the involved SNWs. The mechanism of light emitting for the GNR/SNW heterojunction LED was discussed. Our approach can easily be extended to other semiconductor nano-materials. Moreover, our achievement opens the door to next-generation display technologies, including portable, "see-through", and conformable products.

Mesoscale and Nanoscale Physics,Materials Science
High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Zhenxing Zhang,Yuxun Ye,Chaodan Pu,Yunzhou Deng,Xingliang Dai,Xiaopeng Chen,Dong Chen,Xuerong Zheng,Yuan Gao,Wei Fang,Xiaogang Peng,Yizheng Jin

DOI: https://doi.org/10.1002/adma.201801387

IF: 29.4

2018-01-01

Advanced Materials

Abstract:Quantum-dot light-emitting diodes (QLEDs) may combine superior properties of colloidal quantum dots (QDs) and advantages of solution-based fabrication techniques to realize high-performance, large-area, and low-cost electroluminescence devices. In the state-of-the-art red QLED, an ultrathin insulating layer inserted between the QD layer and the oxide electron-transporting layer (ETL) is crucial for both optimizing charge balance and preserving the QDs' emissive properties. However, this key insulating layer demands very accurate and precise control over thicknesses at sub-10 nm level, causing substantial difficulties for industrial production. Here, it is reported that interfacial exciton quenching and charge balance can be independently controlled and optimized, leading to devices with efficiency and lifetime comparable to those of state-of-the-art devices. Suppressing exciton quenching at the ETL-QD interface, which is identified as being obligatory for high-performance devices, is achieved by adopting Zn0.9Mg0.1O nanocrystals, instead of ZnO nanocrystals, as ETLs. Optimizing charge balance is readily addressed by other device engineering approaches, such as controlling the oxide ETL/cathode interface and adjusting the thickness of the oxide ETL. These findings are extended to fabrication of high-efficiency green QLEDs without ultrathin insulating layers. The work may rationalize the design and fabrication of high-performance QLEDs without ultrathin insulating layers, representing a step forward to large-scale production and commercialization.
Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga2O3/n-GaN MIS heterojunction light-emitting diodes

Xian Zhang,Zhiang Yue,Guojiao Xiang,Jinming Zhang,Enqin Zhao,Chengle Song,Bingxin Ding,Hangyu He,Lukai Wang,Wenwen Jin,Jingwen Shu,Hui Wang,Yang Zhao

DOI: https://doi.org/10.1039/d3tc03457g

IF: 6.4

2023-11-11

Journal of Materials Chemistry C

Abstract:GaN-based light-emitting diodes (LEDs) have attracted widespread attention owing to their advantages of high efficiency and brightness, stable emission and full color emission. However, only a few studies have reported LEDs with bidirectional driving. Herein, we first fabricated an Au/i-Ga 2 O 3 /n-GaN heterojunction LED with a striking electrical performance of bidirectional DC driving. The results of I – V tests indicated that the LED possesses excellent rectification characteristics. The LED exhibited an extremely low leakage current of 1.6 × 10 −11 A at ambient temperature, which increased to 4.3 × 10 −9 A at 100 °C. In addition, electroluminescence (EL) analysis further confirmed the robust thermal stability of this heterojunction LED. It is noteworthy that the Au/i-Ga 2 O 3 /n-GaN heterojunction LED contains bidirectional DC driving. When the forward current is injected, this LED exhibits the strongest ultraviolet emission (376 nm) at 90 mA, and the peak position of EL spectra remains consistent with the temperature ranging from 50 to 90 °C. When reverse current is injected, the LED mainly emitted mixed yellow-green light, and the color coordinate changed from (0.336, 0.363) to (0.303, 0.350). With the increase in external temperature to 80 °C, the EL intensity reached as high as 95% of that at ambient temperature. This finding not only adds a feasible strategy to fabricate GaN-based diodes with intriguing bidirectional DC driving but also opens up a way for the development of special lighting semiconductor devices.

materials science, multidisciplinary,physics, applied
High-Brightness Polarized Green Ingan/Gan Light-Emitting Diode Structure with Al-Coated P-Gan Grating

Guogang Zhang,Xu Guo,Fang-Fang Ren,Yi Li,Bin Liu,Jiandong Ye,Haixiong Ge,Zili Xie,Rong Zhang,Hark Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1021/acsphotonics.6b00433

IF: 7

2016-01-01

ACS Photonics

Abstract:The potential of polarized light sources in liquid-crystal displays has been extensively pursued due to the large energy savings as compared to conventional light sources. Here, we demonstrate high-brightness polarized green light emission from an InGaN/GaN light-emitting diode (LED) structure by combining the strong coupling between surface plasmons (SPs) and multiple quantum wells and polarization effects of SPs. As compared to the as-grown LED structure, a significant enhancement is observed in the total light emission with a high polarization degree of 54%. This work might provide an efficient way to realize simple, compact, and high-efficiency polarized light emission devices for applications in electrooptical integration.
Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Fu-He Hsiao,Wen-Chien Miao,Tzu-Yi Lee,Yi-Hua Pai,Yu-Ying Hung,Daisuke Iida,Chun-Liang Lin,Chi-Wai Chow,Gong-Ru Lin,Kazuhiro Ohkawa,Hao-Chung Kuo,Yu-Heng Hong

DOI: https://doi.org/10.1038/s41598-024-57132-9

IF: 4.6

2024-03-27

Scientific Reports

Abstract:This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on–off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.

multidisciplinary sciences
Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices

Yichun Liu,Haiyang Xu,Chunyang Liu,Weizhen Liu

DOI: https://doi.org/10.1007/s11434-014-0206-9

2014-03-04

Chinese Science Bulletin

Abstract:Wide bandgap (3.37 eV) and high exciton-binding energy of ZnO (60 meV) make it a promising candidate for ultraviolet light-emitting diodes (LEDs) and low-threshold lasing diodes (LDs). However, the difficulty in producing stable and reproducible high-quality p-type ZnO has hindered the development of ZnO p–n homojunction LEDs. An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials (such as p-GaN) or building new device structures. In this article, we will briefly review the recent progress in ZnO LEDs/LDs based on p–n heterostructures and metal–insulator-semiconductor heterostructures. Some methods to improve device efficiency are also introduced in detail, including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs/LDs.
Highly efficient blue light-emitting diodes with tunable wavelength using vertically graded bandgap quasi-2D perovskite films

Zhiyong Fan,Lei Shu,Qianpeng Zhang,Swapnadeep Poddar,Daquan Zhang,Yu Fu,Bryan Cao,Yucheng Ding

DOI: https://doi.org/10.21203/rs.3.rs-926924/v1

2021-01-01

Abstract:Abstract Metal halide perovskite materials have emerged as a unique class of solution process compatible semiconductors and alluring candidates for high-performance optoelectronic applications1,2,3, especially light-emitting diodes (LEDs), owing to high quantum efficiency, facile color tunability, narrow emission line widths, as well as cost-effectiveness4,5,6. Despite of the great successes on green and red perovskite LEDs (PeLEDs), the advancement of external quantum efficiency (EQE) of blue PeLEDs still lags far behind those of green and red PeLEDs7,8. Here, we demonstrate color-tunable blue PeLEDs devices with high EQE of 16.1% and 10% for emission wavelengths of 472 nm and 461 nm, respectively. The efficient tunable wavelength electroluminescence (EL) and high (EQE) originate from the optimization of the recombination zone position to reach the charge injection balance in the vertically graded bandgap quasi-2D perovskite materials. Under the synergetic effect of lead chloride (PbCl2) doping and propane-1,3-diammonium (PDABr2) incorporation, the vertically graded bandgap perovskite materials can be prepared by the self-regulation of the reduced-dimensional perovskite during the annealing process. Our work here has significantly elevated the performance of the current blue PeLEDs. It opens up a novel avenue to fabricate high-performance blue PeLEDs that can match up the performance of the green and red PeLEDs for future lighting and display applications.

Orthostatic reactions in the 85- year olds

Ordered nanowire array blue/near-UV light emitting diodes.

Stable white emission and color-tunable electroluminescence achieved from n-ZnO/p-GaN nano-heterojunction decorated with CsPbBr3 and CsPbI3 quantum dots

One-chip multicolor electroluminescence from an isotype heterojunction light-emitting diode

White light-emitting quantum dot diodes and tuning of luminescence processes

Full‐Color Electroluminescence from ZnO‐Nanoparticles‐based Homojunction Diodes

Light‐Emitting Devices: Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires (small 19/2017)

Wavelength-Tunable Green Light Sources Based on ZnO:Ga Nanowire/p-InGaN Heterojunctions

Facile approaches to prepare n-ZnO/(i-ZnO)/p-GaN heterojunction light-emitting diodes with white-light-electroluminescence

High-Color-Rendition White QLEDs by Balancing Red, Green and Blue Centres in Eco-Friendly ZnCuGaS:In@ZnS Quantum Dots

AgNWs/AZO composite electrode for transparent inverted ZnCdSeS/ZnS quantum dot light-emitting diodes

Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

Efficient and bright white light-emitting diodes based on single-layer heterophase halide perovskites

Large-Area Tunable Red/Green/Blue Tri-Stacked Quantum Dot Light-Emitting Diode Using Sandwich-Structured Transparent Silver Nanowires Electrodes

Multicolor Graphene Nanoribbon/Semiconductor Nanowire Heterojunction Light-Emitting Diodes

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga2O3/n-GaN MIS heterojunction light-emitting diodes

High-Brightness Polarized Green Ingan/Gan Light-Emitting Diode Structure with Al-Coated P-Gan Grating

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices

Highly efficient blue light-emitting diodes with tunable wavelength using vertically graded bandgap quasi-2D perovskite films