AgNWs/AZO composite electrode for transparent inverted ZnCdSeS/ZnS quantum dot light-emitting diodes

Xiaohong Jiang,Zhiyao Song,Guo Liu,Yuting Ma,Aqiang Wang,Yimeng Guo,Zuliang Du
DOI: https://doi.org/10.1088/1361-6528/ab4dcd
IF: 3.5
2019-10-31
Nanotechnology
Abstract:Fully transparent inverted quantum dot light-emitting diodes (QLEDs) were fabricated by incorporating a Ag-nanowire-based anode. Aluminum-doped zinc oxide (ZnO:Al, AZO) was inserted by atomic layer deposition and reduced the sheet resistance by promoting adhesion of Ag nanowires (AgNWs) film and increasing its chemical stability towards oxygen. The performance of the QLEDs was optimal when the thickness of AZO was 20 nm. The current efficiency of the fully transparent inverted QLED integrated with the AgNWs/AZO anode reached 15.33 cd/A, which is an order-of-magnitude increase over the best performance reported to date. The main peak wavelength and optical transmittance of the inverted QLEDs were 530 nm and 75.66%, respectively. This discovery is expected to provide a basic method for the production of flexible displays with full transparency by AgNWs-based electrodes.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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