Abstract:Ternary complex oxides exhibit strong compositional dependence on their structure and functionalities. While the profound impact of the cation stoichiometry on the physical properties of ZnGa 2 O 4 is widely recognized, how it affects the ultraviolet photodetection behavior remains not clear. Here we apply a combinatorial pulsed laser deposition technique to establish graded composition in Zn x Ga 1-x O (0 ≤ x ≤ 1) across a 2-inch sapphire substrate. In combination with structural and optical characterizations, a systematic investigation of the compositional effect on the phase, crystallinity and bandgap for the Zn x Ga 1-x O system is performed, and their further impact on the photodetection performance is compared by fabricating multiple metal–semiconductor-metal (MSM) photodetectors based on the graded Zn x Ga 1-x O films. Decent photodetection behavior is seen for the photodetectors with x ≤ 0.33, above which the performance is largely limited by the conductive phase formation. An optimized compositional range of x = 0.18–0.27 is identified to deliver the best device performance, which includes a responsivity of 12.88 A/W and a photo-to-dark current ratio of 2.8 × 10 8 . This slight zinc deficiency is considered beneficial for the formation of moderate level of oxygen vacancies or antisite defects that boosts carrier transport. This study sheds light on the composition-dependent evolution of structure and properties in ternary ultrawide-bandgap semiconductors for high-performance ultraviolet photodetection.

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga 2 O 3 films by introducing Zn impurity

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Optical Properties and UV Photoresponse of Na2x Zn1−x O Thin Film

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

Effect of Na Concentrations on Microstructure and Optical Properties of Zno Films

Effect of Magnesium Doping on the Light-Induced Hydrophilicity of Zno Thin Films

ε-Ga2O3 thin films grown by metal-organic chemical vapor deposition and its application as solar-blind photodetectors

Combinatorial tuning of structure and optoelectronic properties of Zn-Ga-O thin films for deep ultraviolet photodetection

The Effect of Ga-doped Nanocrystalline ZnO Electrode on Deep-Ultraviolet Enhanced GaN Photodetector

Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors

Bandgap Tunable ZnGaO Thin Films Grown by Atomic Layer Deposition for High-Performance Ultraviolet Photodetection

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Characteristics of Ga-doped ZnO Thin-Film Ultraviolet Photodetectors Fabricated on Patterned Si Substrate

High-performance solar-blind photodetectors based on Ta-doped ZnSnO 3 single crystal thin films

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa2O4 thin films ∗

Enhancing β-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate

Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa2O4 Films by Pulsed Laser Deposition

The effect of Mg doping concentration and annealing on the structure and luminescence properties of ZnO thin films

Microstructure, Optical and Photoluminescence Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition

Fabrication of ZnSnO3 single crystal films on sapphire substrates by pulsed laser deposition for solar-blind photodetectors