Abstract:Gaining insight into crystal structure is essential for understanding thermoelectric transport mechanisms and predicting thermoelectric properties. The main challenge in studying thermoelectric mechanisms is often imprecise or wrong models of the crystal structure. This work examines the structure modifications observed in MgAgSb thermoelectric materials by multitemperature high-resolution synchrotron radiation powder X-ray diffraction (SR-PXRD). Rietveld refinement reveals large atomic displacement parameters (ADPs) of the Agl atoms at the 4a position indicating possible atomic disorder, which may contribute to the low thermal conductivity observed in alpha-MgAgSb. The temperature dependence of anisotropic structural parameters indicates a tendency of increasing structural symmetry in alpha-MgAgSb with increasing temperature, largely contributing to the temperature evolution of the thermoelectric properties. Two MgAgSb polymorphs (beta-MgAgSb and gamma-MgAgSb) coexist at 700 K, and only the gamma-MgAgSb crystalline phase is found at high temperatures (800-1000 K). The content of gamma-MgAgSb phase decreases with temperature due to the increase of liquid impurities, and the sample is only 43.8% crystalline at 1000 K. At 800 K, the high resolution powder data are fitted equally well using type I (with Mg, Ag, and Sb on the 4b, 4c, and 4a sites, respectively) and type II (with Mg, Ag, and Sb on the 4a, 4b, and 4c sites, respectively) half-Heusler crystal structure models. Nonetheless, maximum entropy method (MEM) analysis carried out on the extracted factors shows that the type II structure gives a more physically sound MEM electron density. The disorder in gamma-MgAgSb consists of mixed sites of Mg and Ag as well as vacancies, and the strong disorder of the cation sublattice contributes to the low thermal conductivity.

Identifying the Point Defects in Single-Crystalline Mg 3 Sb 2

Revealing the Defect-Dominated Electron Scattering in Mg 3 Sb 2 -Based Thermoelectric Materials

Significant Roles of Intrinsic Point Defects in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials

Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2

Enhancing the Thermoelectric Performance of Mg2Sn Single Crystals Via Point Defect Engineering and Sb Doping.

Visualizing the Mg atoms in Mg<sub>3</sub>Sb<sub>2</sub> thermoelectrics using advanced iDPC-STEM technique

Revealing the temperature-driven Lifshitz transition in p -type Mg3Sb2-based thermoelectric materials

Point defect engineering and machinability in n-type Mg3Sb2-based materials

Mg Vacancy and Dislocation Strains As Strong Phonon Scatterers in Mg2Si1−xSbx Thermoelectric Materials

Control of the Thermoelectric Properties of Mg2Sn Single Crystals Via Point-Defect Engineering

Metallic N-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance.

Elaborating the Crystal Structures of Mgagsb Thermoelectric Compound: Polymorphs and Atomic Disorders

Ag-Mg antisite defect induced high thermoelectric performance of α-MgAgSb

High Performance Mg2(Si,Sn) Solid Solutions: a Point Defect Chemistry Approach to Enhancing Thermoelectric Properties

Electronic structure and transport property of p-type Mg3Sb2 from first-principles study

Bi-Deficiency Leading to High-Performance in Mg<sub>3</sub>(Sb,Bi)<sub>2</sub>-Based Thermoelectric Materials

Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Theoretical Study of Defects in Cu$_3$SbSe$_4$: Search for Optimum Dopants for Enhancing Thermoelectric Properties

Revealing the intrinsic p-to-n transition mechanism on Mg 3 Sb 2 through extra Mg

Growth and transport properties of Mg3X2 (X = Sb, Bi) single crystals

An extended computational approach for point-defect equilibria in semiconductor materials