Abstract:Among the intriguing p-type thermoelectric IV-VI compounds, SnTe is an important alternative to both PbTe and GeTe for free of toxicity of Pb and scarcity of Ge. However, pristine SnTe has poor thermoelectric performance because of its intrinsic high hole concentration, big energy difference between L and Σ bands and high lattice thermal conductivity. In this work, In and Cd co-doping SnTe material, which combines the effect of resonant level and band convergence together, was obtained by self-propagating high-temperature synthesis (SHS) and plasma activated sintering (PAS). The generated Te vacancies are regularly arranged to form super-structured defects in the subsequent constrained hot compressing process, which include regular array of atomic defects and nanoscale precipitates. As a result, the hole concentration of the compressed SnTe-based material is reduced due to the donor doping effect of Te vacancies, and the hole mobility is remarkably improved to 372.94 cm2V−1s−1 and 66.19 cm2V−1s−1 at room temperature for the SnTe and In0.01Cd0.02Sn0.97Te material with compressibility of 35%, respectively. These atomic and nanoscale super-structured defects not only ensure superior electrical transport properties, but also bring much stronger scattering effect on phonons, thus leading to extremely low lattice thermal conductivity of 1.2 Wm−1K− 1 at 888 K for the 35% compressed In0.01Cd0.02Sn0.97Te material. With synergistically optimized carrier and phonon transport behavior through resonant level engineering, band convergence engineering and super-structured defects engineering, a peak ZT value of 0.8 is achieved in In0.01Cd0.02Sn0.97Te material with compressibility of 35%. This work provides an effective strategy to realize the decoupling of electron and phonon scattering through Te vacancy-based super-structured defects modulation, and makes up an important part of multiscale microstructure tailoring for thermoelectric materials.

Control of the Thermoelectric Properties of Mg2Sn Single Crystals Via Point-Defect Engineering

Enhancing the Thermoelectric Performance of Mg2Sn Single Crystals Via Point Defect Engineering and Sb Doping.

High Performance Mg2(Si,Sn) Solid Solutions: a Point Defect Chemistry Approach to Enhancing Thermoelectric Properties

Multiscale Defects as Strong Phonon Scatters to Enhance Thermoelectric Performance in Mg2Sn1-xSbx Solid Solutions

Enhanced Thermoelectric Performance of P-Type Mg2Sn Single Crystals Via Multi-Scale Defect Engineering

Balancing electron and phonon scatterings while tailoring carrier concentration in SnTe for enhancing thermoelectric performance

Significant Roles of Intrinsic Point Defects in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials

First-principles Calculations to Investigate Probing the Influence of Mn and Mg Doping Concentration on Electronic Structures and Transport Properties of SnTe Alloys

Enhanced Thermoelectric Performance by Strong Phonon Scattering at the Heterogeneous Interfaces of the Mg 2 Sn/Mg 3 Sb 2 High-Content Nanocomposite

Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg2Sn0.75Ge0.25‐Based Thermoelectric Devices

Super-structured defects modulation for synergistically optimizing thermoelectric property in SnTe-based materials

Maximized atomic disordering approach boost the thermoelectric performance of Mg2Sn through the self-compensation effect and steric effect

Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe

Enhanced Thermoelectric Performance of Mg-Sn Thin Films: Role of Mg9Sn5 Phase and One-Dimensional Electronic Structure

Revealing the Defect-Dominated Electron Scattering in Mg 3 Sb 2 -Based Thermoelectric Materials

Bi-Deficiency Leading to High-Performance in Mg<sub>3</sub>(Sb,Bi)<sub>2</sub>-Based Thermoelectric Materials

Thermodynamic criterions of the thermoelectric performance enhancement in Mg2Sn through the self-compensation vacancy

Ag-Mg antisite defect induced high thermoelectric performance of α-MgAgSb

Constructing Coated Grain Nanocomposites and Intracrystalline Precipitates to Simultaneously Improve the Thermoelectric and Mechanical Properties of SnTe by MgB2 and Sb Co‐Doping

Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2