Abstract:A novel in situ biasing approach has facilitated atomic‐level observation of domain wall translational features in PZT/LSMO heterojunction via precise electric field control. The study uncovers a unique domain wall creeping behavior with morphology variation, driven by the competition between gradient, elastic, and electrostatic energies. These findings advance a fundamental understanding of domain wall properties and potential modulation in practical devices. As a promising candidate for next‐generation nonvolatile memory devices, ferroelectric oxide films exhibit many emergent phenomena with functional applications, making understanding polarization switching and domain evolution behaviors of fundamental importance. However, tracking domain wall motion in ferroelectric oxide films with high spatial resolution remains challenging. Here, an in situ biasing approach for direct atomic‐scale observations of domain nucleation and sideways motion is presented. By accurately controlling the applied electric field, the lateral translational speed of the domain wall can decrease to less than 2.2 Å s−1, which is observable with atomic resolution STEM imaging. In situ observations on a capacitor structured PbZr0.1Ti0.9O3/La0.7Sr0.3MnO3 heterojunction demonstrate the unique creeping behavior of a domain wall under a critical electric field, with the atomic structure of the creeping domain wall revealed. Moreover, the evolution of the metastable domain wall forms an elongated morphology, which contains a large proportion of charged segments. Phase‐field simulations unveil the competition between gradient, elastic, and electrostatic energies that decide this unique domain wall creeping and morphology variation. This work paves the way toward a complete fundamental understanding of domain wall physics and potential modulations of domain wall properties in real devices.

Huge mobility difference between the neutral and charged steps on 180° domain walls of PbTiO3 by first-principles calculations

Ferroelectric Domain Switching Pathways—from Grain Boundary to Grain Body

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

First-principles Calculations of Domain Wall Energies of Prototypical Ferroelectric Perovskites

Hybrid Functional Study on the Ferroelectricity of Domain Walls with O-vacancies in PbTiO3

First-principles Study Of180∘domain Walls Inbatio3: Mixed Bloch-Néel-Ising Character

Ferroelastic‐Domain‐Assisted Mechanical Switching of Ferroelectric Domains in Pb(Zr,Ti)O3 Thin Films

Multi-step Domain Switching and Polarization Fatigue in [110]-Oriented 0.67Pb(mg1/3nb2/3)o3-0.33Pbtio3 Single Crystals

Anisotropic Domain Switching in Pb(Mg1/3Nb2/3)O-3-0.30PbTiO(3) Single Crystals with Rhombohedral Structure

Domain Switching Dynamics for ImClO4 Molecular Ferroelectric Thin Films

Effect of Dislocation Walls on the Polarization Switching of a Ferroelectric Single Crystal

Atomic-scale mapping of dipole frustration at 90° charged domain walls in ferroelectric PbTiO3 films

Ideal barriers to polarization reversal and domain-wall motion in strained ferroelectric thin films

Phase Transition Effect on Ferroelectric Domain Surface Charge Dynamics in BaTiO 3 Single Crystal.

PFM Study of the 90 Degrees Step-by-Step Domain Switching and the Temperature Effect in 0.8Pbtio(3)-0.2Bi(mg0.5ti0.5)o-3 Ferroelectric Thin Film

Intrinsic ferroelectric switching from first principles

In Situ Observation of Domain Wall Lateral Creeping in a Ferroelectric Capacitor

Phase-field modeling and electronic structural analysis of flexoelectric effect at 180° domain walls in ferroelectric PbTiO3

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage