Abstract:Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer systems a testbed for multiqubit quantum computing architectures and atomically precise 2-D superlattice designs whose behaviors are directly tied to the deterministic placement of single dopants. However, dopant segregation, diffusion, surface roughening, and defect formation during the encapsulation overgrowth introduce large uncertainties to the exact dopant placement and activation ratio. In this study, we develop a unique method by combining dopant segregation/diffusion models with sputter profiling simulation to monitor and control, at the atomic scale, dopant movement using room-temperature grown locking layers (LL). We explore the impact of LL growth rate, thickness, rapid thermal anneal, surface accumulation, and growth front roughness on dopant confinement, local crystalline quality, and electrical activation within Si:P 2-D systems. We demonstrate that dopant movement can be more efficiently suppressed by increasing the LL growth rate than by increasing LL thickness. We find that the dopant segregation length can be suppressed below a single Si lattice constant by increasing LL growth rates at room temperature while maintaining epitaxy. Although dopant diffusivity within the LL is found to remain high even below the hydrogen desorption temperature, we demonstrate that exceptionally sharp dopant confinement with high electrical quality within Si:P monolayers can be achieved by combining a high LL growth rate with a low-temperature LL rapid thermal anneal.

Monolayer contact doping of silicon surfaces and nanowires using organophosphorus compounds

Monolayer Doping: A Shallow Acceptor of Phosphorous Doped in MoSe <sub>2</sub> Monolayer (Adv. Electron. Mater. 1/2020)

Controlled nanoscale doping of semiconductors via molecular monolayers

Controlling the dopant dose in silicon by mixed-monolayer doping

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Controlled Doping by Self-Assembled Dendrimer-Like Macromolecules

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Deep Level Transient Spectroscopic Investigation of Phosphorus-Doped Silicon by Self-Assembled Molecular Monolayers

Full Activation of Dopants by Carbon-free Self-Assembled Molecular Monolayer Doping

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Toward Scalable Fabrication of Atomic Wires in Silicon by Nanopatterning Self-Assembled Molecular Monolayers

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Phosphorus doping of ultra-small silicon nanocrystals

Boosting the Boron Dopant Level in Monolayer Doping by Carboranes

Controlled doping of silicon nanocrystals investigated by solution-processed field effect transistors.

De-carbonization of Self-Assembled Molecular Monolayers Doping in Silicon

Unexpected Phosphorus Doping Routine of Planar Silicon Nanowires for Integrating CMOS Logics.

Nanoscale Electronics Based on Two-Dimensional Dopant Patterns in Silicon

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers