Abstract:The emergence of integrated photonic technology provides an attractive solution of high speed, broad bandwidth and strong parallelism for large-scale information transmission and processing in interconnection, communication and computing. Reconfigurability is necessary for photonic processors to adapt varieties of application scenarios in the fields of data exchange, microwave photonics and neural networks. As yet, thermo-optical effect and carrier plasma dispersion effect are the most common phenomena for optical modulation. However, the volatility not only requires continuous power supply to maintain the devices’ state, but also accompanies with serious thermal crosstalk induced by active regions. Hence, the nonvolatile methods that can reconfigure and fix on the current state for a long time after a single external excitation are considered as one of the significant technologies in the next generation of integrated photonics. Nonvolatile reconfiguration has been achieved through trapped-charge effect, bistable micro-electromechanical system (MEMS) with nano-latch mechanism and ferroelectric materials, which suffer from high loss, lower stability and complex process flow. Chalcogenide phase change materials (PCM) have become a promising method to realize compact and nonvolatile reconfigurable integrated photonic devices due to the high optical constant contrast between amorphous state and crystalline state, superiorly stable property and low temperature deposition possibility. Here, we developed a monolithic back-end-of-line integration technology of PCM in silicon photonics, supporting "Zero-change" heterogeneous integration platform at wafer scale. On this basis, nonvolatile integrated photonic devices with excellent performance have been fabricated. It lays a foundation for improving the energy efficiency and integration density of integrated photonic processors and suppressing thermal crosstalk between integrated photonic devices.

Low-power 7-bit hybrid volatile/ nonvolatile tuning of ring resonators

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Non-volatile electrically programmable integrated photonics with a 5-bit operation

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material

Nonvolatile Reconfigurable Phase-change-materials Integrated Silicon Photonics

Ultracompact High‐Extinction‐Ratio Nonvolatile On‐Chip Switches Based on Structured Phase Change Materials

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Non-volatile Tuning of Cryogenic Optical Resonators

Robust electrothermal switching of optical phase change materials through computer-aided adaptive pulse optimization

Non-volatile tunable optics by design: From chalcogenide phase-change materials to device structures

High-speed and energy-efficient non-volatile silicon photonic memory based on heterogeneously integrated memresonator

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In<sub>2</sub>O<sub>3</sub>/GST Segmented Structures

Ultracompact programmable silicon photonics using layers of low-loss phase-change material Sb$_2$Se$_3$ of increasing thickness

Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater

Robust, Efficient, Micrometre-Scale Phase Modulators at Visible Wavelengths

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Silicon compact microdisk resonators using phase change material for photonic memory and logic gate

Low-loss multilevel operation using lossy PCM-integrated silicon photonics

"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics