Abstract:In this work, we proposed a new 3D integration technology: the Flip 3D integration (F3D), consisting of the 3D transistor stacking, the 3D dual-sided interconnects, the 3D die-to-die stacking and the dual-sided Monolithic 3D (M3D). Based on a 32-bit FFET RISCV core, besides the scaling benefits of the Flip FET (FFET), the dual-sided signal routing shows even more routing flexibility with 6.8% area reduction and 5.9% EDP improvement. Novel concepts of Multi-Flipping processes (Double Flips and Triple Flips) were proposed to relax the thermal budget constraints in the F3D and thus support the dual-sided M3D in the F3D. The core's EDP and frequency are improved by up to 3.2% and 2.3% respectively, after BEOL optimizations based on the Triple Flips compared with unoptimized ones.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is how to continue to increase the integration density and performance of chips through new 3D integration technologies in the situation where the traditional Moore's Law is approaching its limit. Specifically, the paper proposes a new 3D integration technology - Flip 3D Integration (F3D), aiming to maximize the potential of both sides of the wafer and surpass traditional 3D integration methods. ### Main Problems and Solutions 1. **Limitations of Traditional 3D Integration Technologies**: - Current 3D integration technologies (such as Complementary Field - Effect Transistors (CFET) and single - sided hybrid bonding) face problems such as high - aspect - ratio process challenges, thermal budget limitations, and I/O bumps being limited to a single side. - These limitations impede further chip stacking and performance improvement. 2. **The Proposed New Technology: Flip 3D Integration (F3D)**: - **Dual - Sided Interconnects (DSI)**: By implementing signal and power routing on both sides of the wafer, it significantly improves wiring flexibility and area utilization. For example, the DSI 2.0 version allows independent double - sided wiring, reducing the need for signal transmission units and thus saving area. - **Multi - Flipping Processes**: To address the impact of high - temperature processes on device performance, Double Flips and Triple Flips processes are proposed. These processes enable the front - end and back - end metal gates to be formed after high - temperature epitaxy, relaxing the thermal budget constraint and supporting double - sided M3D integration. - **3D Stacking**: The F3D technology supports multiple stacking methods (face - to - face, back - to - back, face - to - back) and removes Through - Silicon Vias (TSV) used in traditional 3D packaging, further enhancing integration and performance. ### Technological Advantages - **Area Reduction**: A 6.8% area reduction is achieved through DSI 2.0. - **Energy Efficiency Improvement**: After optimization, the core Energy - Delay Product (EDP) and frequency are increased by 3.2% and 2.3% respectively. - **Manufacturing - Friendliness**: The FFET architecture is easier to manufacture compared to CFET, reducing the process difficulty. ### Conclusion By combining 3D transistor stacking, double - sided interconnects, 3D chip stacking, and multi - flipping processes, the F3D technology shows great potential and can promote the development of next - generation 3D integration, providing a broader space for future high - performance computing and storage. --- If you need a more detailed explanation or have other questions, please feel free to let us know!

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