Abstract:Synthesis of device-quality GeSn materials with higher Sn compositions is hindered by various factors, such as Sn segregation, clustering, and short-range ordering effects. In the present work, the impact of the clustering of Sn atoms in a GeSn semiconductor alloy was studied by density functional theory using SG15 pseudopotentials in a Synopsys QuantumATK tool, where the thermodynamic stability, effective band structure, indirect and direct bandgaps, and density of states (DOS) were computed to highlight the difference between a cluster-free random GeSn alloy and a GeSn alloy with Sn–Sn clusters. A 54-atom bulk Ge1–xSnx (x = 3.71%–27.77%) supercell was constructed with cluster-free and a first nearest neighbor Sn–Sn clustered GeSn alloy at each composition for this work. Computation using the generalized gradient approximation exchange-correlation functional showed that the thermodynamic stability of GeSn was reduced due to the clustering of Sn, which increased the formation energy of the GeSn alloys by increasing the Hartree potential energy and exchange-correlation energy. Moreover, with the effective band structure of the GeSn material at a Sn composition of ∼22%, both direct (Eg,Γ) and indirect (Eg,L) bandgaps decreased by a large margin of 40.76 and 120.17 meV, respectively, due to Sn–Sn clustering. On the other hand, Eg,Γ and Eg,L decrease is limited to 0.5 and 12.8 meV, respectively, for Sn composition of ∼5.6%. Similar impacts were observed on DOS, in an independent computation without deducing from the electronic band structure, where the width of the forbidden band reduces due to the clustering of Sn atoms in GeSn. Moreover, using the energy bandgaps of GeSn computed with the assumption of it being a random alloy having well-dispersed Sn atoms needs revision by incorporating clustering to align with the experimentally determined bandgap. This necessitates incorporating the effect of Sn atoms clustered together at varying distributions based on experimental characterization techniques such as atom probe tomography or extended x-ray absorption fine structure to substantiate the energy bandgap of the GeSn alloy at a particular composition with precision. Hence, considering the effect of Sn clusters during material characterization, beginning with the accurate energy bandgap characterization of GeSn would help in mitigating the effect of process variations on the performance characteristics of GeSn-based group IV electronic and photonic devices such as varying leakage currents in transistors and photodiodes as well as the deviation from the targeted wavelength of operation in lasers and photodetectors.

First-Principles Calculation of Alloy Scattering and n-type Mobility in Strained GeSn

Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling

Impact of stoichiometry and strain on Ge$_{1-x}$Sn$_{x}$ alloys from first principles calculations

Phase‐Coherent Transport in GeSn Alloys on Si

Enhanced Carrier Mobility And Direct Tunneling Probability Of Biaxially Strained Ge1-Xsnx Alloys For Field-Effect Transistors Applications

Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles

Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Investigation on the effective mass of Ge1−xSnx alloys and the transferred-electron effect

First-principles Study of Carrier Mobility and Strain Effect in MX (M=Sn, Pb; X=P, As) Monolayers

Material Characterization And Device Simulation Of Gesn Alloys For Field-Effect Transistors Applications

First-principles Study on Ge1−xSnx-Si Core-Shell Nanowire Transistors

Non-substitutional single-atom defects in the Ge_(1-x)Sn_x alloy

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model

Electronic structure and optical properties of Ge96−Sn (0≤x≤50): A first-principles study

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Epitaxial Stabilisation of ${\bf \mathrm{Ge_{1-x}Sn_x}}$ Alloys

Achieving Enhanced Hole Transport Capability of Ge1−xSnxalloys Through Uniaxial Compressive Strain

Effects of Uniaxial Strain on Electron Effective Mass and Tunneling Capability of Direct Gap Ge1−xSnx Alloys

Thermoelectric properties of n-type SiGe alloys with Sn incorporation