Abstract:To meet the radiosonde requirement of high sensitivity and linearity, this study designs and implements a monolithically integrated array-type piezoresistive intelligent pressure sensor system which is made up of two groups of four pressure sensors with the pressure range of 0⁻50 kPa and 0⁻100 kPa respectively. First, theoretical models and ANSYS (version 14.5, Canonsburg, PA, USA) finite element method (FEM) are adopted to optimize the parameters of array sensor structure. Combing with FEM stress distribution results, the size and material characteristics of the array-type sensor are determined according to the analysis of the sensitivity and the ratio of signal to noise (SNR). Based on the optimized parameters, the manufacture and packaging of array-type sensor chips are then realized by using the standard complementary metal-oxide-semiconductor (CMOS) and microelectromechanical system (MEMS) process. Furthermore, an intelligent acquisition and processing system for pressure and temperature signals is achieved. The S3C2440A microprocessor (Samsung, Seoul, Korea) is regarded as the core part which can be applied to collect and process data. In particular, digital signal storage, display and transmission are realized by the application of a graphical user interface (GUI) written in QT/E. Besides, for the sake of compensating the temperature drift and nonlinear error, the data fusion technique is proposed based on a wavelet neural network improved by genetic algorithm (GA-WNN) for average measuring signal. The GA-WNN model is implemented in hardware by using a S3C2440A microprocessor. Finally, the results of calibration and test experiments achieved with the temperature ranges from -20 to 20 °C show that: (1) the nonlinear error and the sensitivity of the array-type pressure sensor are 8330 × 10-4 and 0.052 mV/V/kPa in the range of 0⁻50 kPa, respectively; (2) the nonlinear error and the sensitivity are 8129 × 10-4 and 0.020 mV/V/kPa in the range of 50⁻100 kPa, respectively; (3) the overall error of the intelligent pressure sensor system is maintained at ±0.252% within the hybrid composite range (0⁻100 kPa). The involved results indicate that the developed array-type composite pressure sensor has good performance, which can provide a useful reference for the development of multi-range MEMS piezoresistive pressure sensor.

Piezoresistive PtSe$_2$ pressure sensors with reliable high sensitivity and their integration into CMOS ASIC substrates

MXene@CTAB@CMF Three-Dimensional Elastic Base for Piezoresistive Pressure Sensors Realized by Electrostatic Self-Assembly

A Soft Piezoresistive Pressure Sensor Based on Porous Conductive CB/PDMS Composite

Highly sensitive electromechanical piezoresistive pressure sensors based on large-area layered PtSe$_{2}$ films

Differential Pressure Sensors Based on Transfer-Free Piezoresistive Layered PdSe2thin Films.

Flexible and High Performance Piezoresistive Pressure Sensors Based on Hierarchical Flower-Shaped SnSe2 Nanoplates

Synergy of Porous Structure and Microstructure in Piezoresistive Material for High-Performance and Flexible Pressure Sensors

Advancing pressure sensors performance through a flexible MXene embedded interlocking structure in a microlens array

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Ultrasensitive Pressure Sensor Based on an Integrated Circular Piezoelectric MEMS Resonator and Diaphragm Structure

Highly Sensitive Piezoresistive Sensor Based on Modified Polystyrene Microsphere Multi-layer Stacking Conductive Interface

The Design and Implementation of High Pressure Rectangular Diaphragm Sensor Based on Mems Technology

Prefabrication design, theoretical framework and simulation demonstration of a meander-shaped MEMS piezoresistive pressure sensor implanted on silicon substrate circular diaphragm for enhancement of key performance parameters utilized for low-pressure applications

High-Sensitivity and Wide-Range Flexible Ionic Piezocapacitive Pressure Sensors with Porous Hemisphere Array Electrodes

Highly Sensitive, Flexible MEMS Based Pressure Sensor with Photoresist Insulation Layer.

MEMS Pressure Sensor Based on Piezoresistive Effect of MoS<inf>2</inf> Film

MEMS Piezoresistive Pressure Sensor Based on Flexible PET Thin-Film for Applications in Gaseous-Environments

Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments

A Novel Pressure Microsensor with 30- $\mu \Hbox{m}$-Thick Diaphragm and Meander-Shaped Piezoresistors Partially Distributed on High-Stress Bulk Silicon Region

Polysilicon thin film piezoresistive pressure microsensor: design, fabrication and characterization

Engineered Microstructure Derived Hierarchical Deformation of Flexible Pressure Sensor Induces a Supersensitive Piezoresistive Property in Broad Pressure Range