MEMS Pressure Sensor Based on Piezoresistive Effect of MoS<inf>2</inf> Film

Xing Pang,Qi Zhang,Xiaoya Liang,Yulong Zhao
DOI: https://doi.org/10.1109/SENSORS56945.2023.10324905
2023-01-01
Abstract:Molybdenum disulfide (MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) has excellent electrical and mechanical properties and can be used as sensors. 2D MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> is commonly used in sensors and is poorly compatible with MEMS. This paper found that the deposited vertical nanosheets of layered disulfide clamps have excellent piezoresistive properties, which can be prepared in large areas. Its piezoresistive mechanism is attributed to the fact that the tension or compression of the substrate with the stress of the substrate causes an increase or decrease in the spacing of the MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> nanosheets between the layers, which results in a change in the resistance of the nanosheets between the layers. The piezoresistive factor of the MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> film was about 3~5. The MEMS pressure sensor based on novel MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> nanosheets was developed. The sensor showed a nonlinear error of 3.11%FS, a repeatability error of 1.75 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">%</sup> FS, a hysteresis error of 0.74 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">%</sup> FS, and basic accuracy of 3.64%FS.
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