Naresh Bahadursha,Banasree Sadhukhan,Tanay Nag,Swastik Bhattacharya,Sayan Kanungo
Abstract:In this work, for the first time, a density functional theory (DFT) based comprehensive theoretical study is performed on the surface electronic properties of Bi2Se3 nanosheet in the presence of a surface capping layer as well as mechanical strain. The study systematically introduces a biaxial compressive and tensile strain up to 5% in natural, Sb2Se3 surface capped, and SbBiSe3 surface capped Bi2Se3, and the subsequent effects on the electronic properties are assessed from the surface energy band (E-k) structure, the density of states (DOS), band edge energy and bandgap variations, surface conducting state localization, and Fermi surface spin-textures. The key findings of this work are systematically analyzed from conducting surface state hybridization through bulk in the presence of surface capping layers and applied biaxial strain. The result demonstrates that the interplay of surface capping and strain can simultaneously tune the surface electronic structure, spin-momentum locking results from change in electronic localization and interactions. In essence, this work presents an extensive theoretical and design-level insight into the surface capping and biaxial strain co-engineering in Bi2Se3, which can potentially facilitate different topological transport for modern optoelectronics, spintronics, valleytronics, bulk photovoltaics applications of engineered nanostructured topological materials in the future.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to modulate the surface electronic properties of Bi₂Se₃ nanosheets through the co - engineering design of the surface capping layer and biaxial strain. Specifically, the research aims to systematically introduce the effects of Bi₂Se₃ nanosheets in the natural state, with Sb₂Se₃ surface capping, and with SbBiSe₃ surface capping under biaxial compressive and tensile strains (up to 5%). The influence of these factors on the electronic properties is evaluated by analyzing parameters such as the surface band structure (E - k), density of states (DOS), band - edge energy change, surface conduction - state localization, and Fermi - surface spin texture.
### Main research questions:
1. **Influence of surface capping layer and strain on the surface electronic properties of Bi₂Se₃ nanosheets**: Study how to modulate the surface electronic structure of Bi₂Se₃ nanosheets, especially the localization and hybridization of the surface conductive states, through the combined action of the surface capping layer and strain.
2. **Regulation of Dirac point**: Explore how the surface capping layer and strain affect the existence and disappearance of the Dirac point, and how to restore the Dirac point by eliminating surface - state hybridization.
3. **Modulation of spin - momentum locking**: Study how the surface capping layer and strain change electron localization and interaction, thereby affecting the spin - momentum locking characteristics.
4. **Potential applications**: Explore the potential of these modulation methods in modern optoelectronics, spintronics, valleytronics, and bulk photovoltaic applications.
### Research background:
- **Topological insulator (TI)**: Bi₂Se₃ is a typical three - dimensional topological insulator with a non - zero bulk bandgap and conductive surface states.
- **Importance of surface properties**: Surface electronic properties are crucial for applications such as quantum computing and dissipation - free planar carrier transport.
- **Material engineering strategies**: Surface electronic properties can be effectively modulated through methods such as surface modification, alloy formation, doping, and mechanical strain.
### Research methods:
- **Density functional theory (DFT)**: Use DFT for first - principles calculations to simulate the electronic structure of Bi₂Se₃ nanosheets under different conditions.
- **Model construction**: Construct a Bi₂Se₃ nanosheet model with 6 quintuple layers (QL), and consider Sb₂Se₃ and SbBiSe₃ as surface capping layers.
- **Strain analysis**: Introduce biaxial strain (- 5% to + 5%) and calculate the electronic properties under different strain conditions.
### Key findings:
- **Influence of surface capping layer**: The Sb₂Se₃ and SbBiSe₃ surface capping layers can significantly modulate the surface electronic properties of Bi₂Se₃ nanosheets, including inducing the opening of the energy gap and the localization of the surface conductive states.
- **Influence of strain**: Biaxial strain can further modulate the surface electronic structure, especially affecting the existence of the Dirac point by changing electron localization and hybridization.
- **Spin - momentum locking**: The combined action of the surface capping layer and strain can significantly affect the spin - momentum locking characteristics, producing new spin - chirality features.
In summary, through systematic theoretical calculations, this paper reveals the synergistic effect of the surface capping layer and strain in modulating the surface electronic properties of Bi₂Se₃ nanosheets, providing a theoretical basis for future applications in optoelectronics, spintronics, etc.