Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Surface-Facet-Dependent Phonon Deformation Potential in Individual Strained Topological Insulator Bi2Se3 Nanoribbons

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Strain-engineered thermophysical properties ranging from band-insulating to topological insulating phases in β-antimonene

Strain-induced Quantum Topological Phase Transitions in Na3Bi

Size-Dependent Correlations Between Strain and Phonon Frequency in Individual Zno Nanowires

Drastic Enhancement of the Raman Intensity in Few-Layer InSe by Uniaxial Strain

Suppressed thermal transport in silicon nanoribbons by inhomogeneous strain

Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films

Sb2Se3 and SbBiSe3 Surface Capping and Biaxial Strain Co-Engineering for Tuning the Surface Electronic Properties of Bi2Se3 Nanosheet- A Density Functional Theory based Investigation

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Nanoscale mapping of surface strain in tapered nanorods using confocal photoluminescence spectroscopy

Manipulation of Strain State in Silicon Nanoribbons by Top-Down Approach

Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman Spectroscopy

Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets

Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy

Effect of Bending Deformation on Suspended Topological Insulator Nanowires: Towards a Topological Insulator Based NEM Switch

First-principles Study of CdSe Nanoribbon Under Uniaxial Tensile Strain

Strain-gradient Induced Topological Transition in Bent Nanoribbons of the Dirac Semimetal Cd3As2

Phonon Softening and Direct to Indirect Bandgap Crossover in Strained Single Layer MoSe2

Ultrafast measurements of mode-specific deformation potentials of Bi$_2$Te$_3$ and Bi$_2$Se$_3$

Strain-gradient induced topological transition in bent nanoribbons of the Dirac semimetal Cd 3 As 2